Search Results - "Jun Suda"

Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices by Niwa, Hiroki, Suda, Jun, Kimoto, Tsunenobu

“…A temperature dependence of impact ionization coefficients in 4H-SiC was studied in a wide range of electric field toward the accurate designing of…”
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Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate by Horita, Masahiro, Narita, Tetsuo, Kachi, Tetsu, Suda, Jun

“…Energy levels due to intrinsic point defects are identified by deep-level transient spectroscopy (DLTS). Electron-beam (EB) irradiation created nitrogen…”
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Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation by Aoshima, Keito, Horita, Masahiro, Suda, Jun

“…Production rate (PR = trap concentration/incident fluence) of traps formed by energetic particles is important for predicting device degradation caused by…”
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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing by Bockowski, Michal

“…A high activation ratio of acceptors to Mg ions implanted into a homoepitaxial GaN layer was achieved through an ultra-high-pressure annealing (UHPA) process…”
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Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates by Ando, Yuji, Makisako, Ryutaro, Takahashi, Hidemasa, Wakejima, Akio, Suda, Jun

“…This article reports a systematic study on the effects of the epitaxial layer structure on the electrical characteristics of AlGaN/GaN high electron mobility…”
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RF characteristics of 150‐nm AlGaN/GaN high electron mobility transistors fabricated using i‐line stepper lithography by Ando, Yuji, Takahashi, Hidemasa, Makisako, Ryutaro, Wakejima, Akio, Suda, Jun

“…This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors…”
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Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers by Endo, Meguru, Horita, Masahiro, Suda, Jun

“…Recombination centers originating from point defects generated by the displacement of N atoms in n-type and p-type GaN were investigated by analyzing…”
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Temperature dependence of the local electronic properties of n-type GaN crystals by micro-Raman spectroscopy and dielectric dispersion at high temperatures by Kawase, Motoki, Suda, Jun

“…Raman spectra for longitudinal optical phonon-plasmon coupled mode in n-type GaN crystals were measured from room temperature to 200 °C by micro-Raman…”
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Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper by Ando, Yuji, Makisako, Ryutaro, Takahashi, Hidemasa, Wakejima, Akio, Suda, Jun

“…This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal…”
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Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC by Gan Feng, Suda, J., Kimoto, T.

“…An edge termination method, referred to as space-modulated junction termination extension (SMJTE) combined with a mesa structure, is presented for…”
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Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3 by Ito, Koji, Tanaka, Hajime, Horita, Masahiro, Suda, Jun, Kimoto, Tsunenobu

“…Free electron mobility ( μ _free ) in 4H-SiC(0001) MOSFETs with gate oxides annealed in NO or POCl _3 was calculated in a wide range of effective normal field…”
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Improvement of AlSiO/GaN interface by a novel post deposition annealing using ultra high pressure by Kanechika, Masakazu, Hirata, Takumi, Tokozumi, Tomoya, Kachi, Tetsu, Suda, Jun

“…In this study, a novel post-deposition annealing (PDA) technique employing ultra-high pressure was demonstrated for the first time. A 40 nm thick AlSiO gate…”
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Determination of Surface Recombination Velocity From Current-Voltage Characteristics in SiC p-n Diodes by Asada, Satoshi, Suda, Jun, Kimoto, Tsunenobu

“…Surface recombination velocity on mesa sidewalls of SiC p-n diodes with various surface passivation conditions was evaluated from the device-size-dependent…”
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Realization of low specific-contact-resistance on N-polar GaN surfaces using heavily-Ge-doped n-type GaN films deposited by low-temperature reactive sputtering technique by Yamada, Shinji, Shirai, Masanori, Kobayashi, Hiroki, Arai, Manabu, Kachi, Tetsu, Suda, Jun

“…We developed a low-temperature ohmic contact formation process for N-polar GaN surfaces. Specific-contact-resistances of 9.4 × 10 −5 and 2.0 × 10 −5 Ω cm 2…”
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Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers by Iijima, Akifumi, Kamata, Isaho, Tsuchida, Hidekazu, Suda, Jun, Kimoto, Tsunenobu

“…Shockley-type stacking faults expanded in 4H-SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a…”
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Mg-implanted bevel edge termination structure for GaN power device applications by Matys, Maciej, Ishida, Takashi, Nam, Kyung Pil, Sakurai, Hideki, Narita, Tetsuo, Uesugi, Tsutomu, Bockowski, Michal, Suda, Jun, Kachi, Tetsu

“…Herein, we propose and demonstrate the edge termination for GaN-based one-sided abrupt p–n junctions. The structure is comprised of a combination of a shallow…”
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Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy by Kanegae, Kazutaka, Fujikura, Hajime, Otoki, Yohei, Konno, Taichiro, Yoshida, Takehiro, Horita, Masahiro, Kimoto, Tsunenobu, Suda, Jun

“…We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole…”
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Interface state density of SiO2/p-type 4H-SiC ( 0001 ), ( 11 2 ¯ 0 ), ( 1 1 ¯ 00 ) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes by Kobayashi, Takuma, Nakazawa, Seiya, Okuda, Takafumi, Suda, Jun, Kimoto, Tsunenobu

“…Interface properties of heavily Al-doped 4H-SiC ( 0001 ) (Si-face), ( 11 2 ¯ 0 ) (a-face), and ( 1 1 ¯ 00 ) (m-face) metal-oxide-semiconductor (MOS) structures…”
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Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam by Uedono, Akira, Sakurai, Hideki, Narita, Tetsuo, Sierakowski, Kacper, Bockowski, Michal, Suda, Jun, Ishibashi, Shoji, Chichibu, Shigefusa F., Kachi, Tetsu

“…Vacancy-type defects in Mg-implanted GaN were probed by using a monoenergetic positron beam. Mg ions were implanted into GaN to obtain 0.3-μm-deep box profiles…”
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Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping by Feng, Gan, Suda, Jun, Kimoto, Tsunenobu

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