Search Results - "Juhl, Mattias Klaus"

Spectral response of steady-state photoluminescence from GaAs1-xPx layers grown on a SiGe/Si system by Wang, Li, Pollard, Michael E., Juhl, Mattias Klaus, Conrad, Brianna, Soeriyadi, Anastasia, Li, Dun, Lochtefeld, Anthony, Gerger, Andrew, Bagnall, Darren M., Barnett, Allen, Perez-Wurfl, Ivan

“…Measuring the spectral response of photoluminescence (SRPL) in solar cells has recently attracted attention as it can be used as a contactless relative measure…”
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Electronic Properties of Light- and Elevated Temperature-Induced Degradation in Float-Zone Silicon by Zhou, Zhuangyi, Juhl, Mattias Klaus, Vaqueiro-Contreras, Michelle, Rougieux, Fiacre, Coletti, Gianluca

“…Light- and elevated temperature-induced degradation (LeTID) causes long-term instabilities, especially in passivated emitter and rear cells, leading to severe…”
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Electronic Properties of the Boron-Oxygen Defect Precursor of the Light-Induced Degradation in Silicon by Zhou, Zhuangyi, Vaqueiro-Contreras, Michelle, Juhl, Mattias Klaus, Rougieux, Fiacre

“…In this work, we study the electronic properties of the boron-oxygen precursor defect responsible for light-induced degradation in crystalline silicon via…”
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Determining the optical properties of solar cells using low cost scanners by Juhl, Mattias Klaus, Veettil, Binesh Puthen, Scardera, Giuseppe, Payne, David Neil Roger

“…This paper investigates the use of consumer flatbed scanners for the use of monitoring solar cell precursors. Two types of scanners are investigated a contact…”
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Reassessments of Minority Carrier Traps in Silicon With Photoconductance Decay Measurements by Zhu, Yan, Juhl, Mattias Klaus, Coletti, Gianluca, Hameiri, Ziv

“…In photoconductance (PC) based carrier lifetime measurement, artificially high values at low-to-medium injection levels are often observed because of the…”
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Erratum to "Reassessments of Minority Carrier Traps in Silicon With Photoconductance Decay Measurements" [May 19 652-659] by Zhu, Yan, Juhl, Mattias Klaus, Coletti, Gianluca, Hameiri, Ziv

“…Presents corrections to the above named paper…”
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On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors by Juhl, Mattias Klaus, Heinz, Friedemann D., Coletti, Gianluca, Rougieux, Fiacre E., Sun, Chang, Contreras, Michelle V., Niewelt, Tim, Krich, Jacob, Schubert, Martin C.

“…With the remarkable advances in semiconductor processing, devices such as solar cells have fewer and fewer defects that impact their performance. Determination…”
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Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing by Yi, Chuqi, Zhou, Zhuangyi, Juhl, Mattias Klaus, Tong, Jingnan, Fong, Kean Chern, Rougieux, Fiacre Emile, Bremner, Stephen

“…Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to be adopted by the industry after the efficiency of the current…”
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Spatially Resolved Absorptance of Silicon Wafers From Photoluminescence Imaging by Juhl, Mattias Klaus, Trupke, Thorsten, Abbott, Malcolm, Mitchell, Bernhard

“…The absorptance of a silicon solar cell determines the upper limit of its short-circuit current and, thus, its efficiency. Traditional methods used to…”
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High Throughput Outdoor Photoluminescence Imaging via PV String Modulation by Kunz, Oliver, Rey, Germain, Juhl, Mattias Klaus, Trupke, Thorsten

“…Outdoor Photoluminescence imaging of crystalline silicon photovoltaic modules in full daylight via contactless switching of the operating point was recently…”
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Relative External Quantum Efficiency of Crystalline Silicon Wafers From Photoluminescence by Juhl, Mattias Klaus, Abbott, Malcolm David, Trupke, Thorsten

“…The external quantum efficiency is routinely measured to determine the carrier collection probability of solar cells as a function of illumination wavelength…”
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Electronic Properties of the Boron-oxygen Defect Precursor in Silicon by Zhou, Zhuangyi, Vaqueiro-Contreras, Michelle, Juhl, Mattias Klaus, Rougieux, Fiacre

“…Light-induced degradation (LID) occurring on mainstream boron-doped silicon solar cells has been investigated for decades. Its relationship with boron and…”
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Photoluminescence Imaging of Silicon Wafers and Solar Cells With Spatially Inhomogeneous Illumination by Yan Zhu, Juhl, Mattias Klaus, Trupke, Thorsten, Hameiri, Ziv

“…Photoluminescence imaging is a fast and powerful spatially resolved characterization technique, commonly used for silicon wafers and solar cells. In…”
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Application of the Newton–Raphson Method to Lifetime Spectroscopy for Extraction of Defect Parameters by Yan Zhu, Le Gia, Quoc Thong, Juhl, Mattias Klaus, Coletti, Gianluca, Hameiri, Ziv

“…Defect parameter solution surface is a widely accepted method to determine the values of the energy level and the carrier capture cross sections of a defect…”
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Applications of DMD-based Inhomogeneous Illumination Photoluminescence Imaging for Silicon Wafers and Solar Cells by Zhu, Yan, Juhl, Mattias Klaus, Hameiri, Ziv, Trupke, Thorsten

“…Under inhomogeneous illumination, a silicon wafer or solar cell can generate lateral current flow due to gradients in the quasi Fermi energy levels. This…”
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Estimating the effect of LED spectra on EQE measurement in solar cells by Paduthol, Appu Rshikesan, Juhl, Mattias Klaus, Trupke, Thorsten

“…Light emitting diodes (LED) are increasingly being used as light sources in studying solar cells due to their high power and bulb lifetimes. While LEDs provide…”
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Spatially resolved emitter saturation current by photoluminescence imaging by Hameiri, Ziv, Chaturvedi, Pooja, Juhl, Mattias Klaus, Trupke, Thorsten

“…Heavily doped regions (in particular emitters) in silicon wafer solar cells are a major source of recombination which limits the open-circuit voltage, the…”
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Limitations of photoluminescence based external quantum efficiency measurements by Paduthol, Appu, Juhl, Mattias Klaus, Trupke, Thorsten

“…The spectral response of photoluminescence is a contactless method that provides a measurement of the relative external quantum efficiency of silicon solar…”
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Spatially resolved lifetime spectroscopy from temperature-dependent photoluminescence imaging by Hameiri, Ziv, Juhl, Mattias Klaus, Carlaw, Raymond, Trupke, Thorsten

“…Temperature-dependent lifetime spectroscopy is a well-established characterization technique used to determine the energy level of recombination centers…”
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