Search Results - "Judai, Y."

Embedded ferroelectric memory technology with completely encapsulated hydrogen barrier structure by Nagano, Y., Mikawa, T., Kutsunai, T., Natsume, S., Tatsunari, T., Ito, T., Noma, A., Nasu, T., Hayashi, S., Hirano, H., Gohou, Y., Judai, Y., Fujii, E.

“…A 0.18-/spl mu/m system LSI embedded ferroelectric memory (FeRAM) operating at a very low voltage has been developed for the first time. The low-voltage…”
Get full text

Non-volatile memories using SrBi2Ta2O9 ferroelectrics by Jones, R. E., Chu, P. Y., Jiang, B., Melnick, B. M., Taylor, D. J., White, B. E., Zafar, S., Price, D., Zurcher, P., Gillespie, S. J., Otsuki, T., Sumi, T., Judai, Y., Uemoto, Y., Fujii, E., Hayashi, S., Moriwaki, N., Azuma, M., Shimada, Y., Arita, K., Hirano, H., Nakane, J., Nakakum, T., Kano, G.

“…Ferroelectric non-volatile memories (FENVM) are fabricated using spin-coat and fire deposition of the SrBi 2 Ta 2 O 9 layered perovskite ferroelectric. Test…”
Get full text

Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family) by Fujii, E., Otsuki, T., Judai, Y., Shimada, Y., Azuma, M., Uemoto, Y., Nagano, Y., Nasu, T., Izutsu, Y., Matsuda, A., Nakao, K., Tanaka, K., Hirano, K., Ito, T., Mikawa, T., Kutsunai, T., McMillan, L.D., Paz de Araujo, C.A.

“…A highly-reliable ferroelectric memory (FeRAM) which ensures retention of data written at a low voltage of 2.5 V and humidity resistance for 10 years under a…”
Get full text

A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structure by Fajii, E., Judai, Y., Ito, T., Kutsunai, T., Nagano, Y., Noma, A., Nasu, T., Izutsu, Y., Mikawa, T., Yasuoka, H., Azuma, M., Shimada, Y., Sasai, Y., Sato, K., Otsuki, T.

“…A multilevel metal process-based highly reliable ferroelectric memory (FeRAM) has been developed. Highly reliable characteristics have been attained by two…”
Get full text

A highly reliable ferroelectric memory technology with SrBi)2)Ta)2)O)9)-based material and metal covering cellstructure by Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T

“…A multilevel metal process-based highly reliable ferroelectric memory (FeRAM) has been developed. Highly reliable characteristics have been attained by two…”
Get full text

A highly reliable ferroelectric memory technology with SrBi2 Ta2O9-based material and metal covering cell structure by Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T

“…The other is a metal covering memory cell structure which makes the use of plasma silicon nitride (p-SiN) passivation possible without reduction of the…”
Get full text

A highly reliable ferroelectric memory technology with SrBi sub(2)Ta sub(2)O sub(9 )-based material and metal covering cell structure by Fujii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T

“…A multilevel metal process-based highly reliable ferroelectric memory (FeRAM) has been developed. Highly reliable characteristics have been attained by two…”
Get full text

Voltage Shift Effect on Retention Failure in Ferroelectric Memories by Nakao, Keisaku, Judai, Yuji, Azuma, Masamichi, Shimada, Yasuhiro, Otsuki, Tatsuo

“…We investigated the origin of retention failure in ferroelectric memories (FeRAMs) with SrBi 2 (Ta, Nb) 2 O 9 (SBTN) memory cell capacitors by considering the…”
Get full text

A highly reliable ferroelectric memory technology with SrBi sub(2 )Ta sub(2)O sub(9)-bas ed material and metal covering cell structure by Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T

“…A multilevel metal process-based highly reliable ferroelectric memory (FeRAM) has been developed. Highly reliable characteristics have been attained by two…”
Get full text

Ferroelectric nonvolatile memory technology and its applications by SUMI, T, JUDAI, Y, NASU, T, NAGANO, Y, INOUE, A, MATSUDA, A, FUJI, E, SHIMADA, Y, OTSUKI, T, HIRANO, K, ITO, T, MIKAWA, T, TAKEO, M, AZUMA, M, HAYASHI, S.-I, UEMOTO, Y, ARITA, K

“…Nonvolatile memory utilizing ferroelectric material is expected to be the ultimate memory due to its theoretical low power operation and fast access. We…”
Get full text

Advanced LSI embedded with FeRAM for contactless IC cards and its manufacturing technology by Shimada, Y., Arita, K., Fujii, E., Nasu, T., Nagano, Y., Noma, A., Izutsu, Y., Nakao, K., Tanaka, K., Yamada, T., Uemoto, Y., Asari, K., Nakane, G., Inoue, A., Sumi, T., Nakakuma, T., Chaya, S., Hirano, H., Judai, Y., Sasai, Y., Otsuki, T.

“…High performance LSIs embedded with ferroelectric random access memory (FeRAM) for contactless IC cards are now commercially available. The emphasis is placed…”
Get full text

Non-volatile memories using SrBi 2 Ta 2 O 9 ferroelectrics by Jones, R. E., Chu, P. Y., Jiang, B., Melnick, B. M., Taylor, D. J., White, B. E., Zafar, S., Price, D., Zurcher, P., Gillespie, S. J., Otsuki, T., Sumi, T., Judai, Y., Uemoto, Y., Fujii, E., Hayashi, S., Moriwaki, N., Azuma, M., Shimada, Y., Arita, K., Hirano, H., Nakane, J., Nakakum, T., Kano, G.

Get full text

0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V by Nagano, Y., Mikawa, T., Kutsunai, T., Hayashi, S., Nasu, T., Natsume, S., Tatsunari, T., Ito, T., Goto, S., Yano, H., Noma, A., Nagahashi, K., Miki, T., Sakagami, M., Izutsu, Y., Nakakuma, T., Hirano, H., Iwanari, S., Murakuki, Y., Yamaoka, K., Goho, Y., Judai, Y., Fujii, E., Sato, K.

“…We have successfully developed a 0.18 /spl mu/m SBT-based 1 Mbit embedded FeRAM, which operates at a very low voltage of 1.1 V and ensures the data retention…”
Get full text

A microcontroller embedded with 4 Kbit ferroelectric non-volatile memory by Fukushima, T., Kawahara, A., Nanba, T., Matsumoto, M., Nishimoto, T., Ikeda, N., Judai, Y., Sumi, T., Arita, K., Otsuki, T.

“…We have developed for the first time a 4-bit microcontroller (MCU) embedded with 4 Kbit ferroelectric non-volatile memory (FeRAM). The MCU integrating FeRAM…”
Get full text

Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials by Arita, K., Shimada, Y., Uemoto, Y., Hayashi, S., Azuma, M., Judai, Y., Sumi, T., Fujii, E., Otsuki, T., McMillan, L.D., De Araujo, C.A.P.

“…Ferroelectric nonvolatile memory (FeRAM) technology using thin films of a bismuth layer-structured ferroelectric material (also known as "Y-1") is presented…”
Get full text

A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns by Sumi, T., Moriwaki, N., Nakane, G., Nakakuma, T., Judai, Y., Uemoto, Y., Nagano, Y., Hayashi, S., Azuma, M., Fujii, E., Katsu, S.-I., Otsuki, T., McMillan, L., Paz de Araujo, C., Kano, G.

“…One of the most important features for ferroelectric material is fast write at low voltage. This feature is used in a 256 kb nonvolatile memory that operates…”
Get full text