Search Results - "Jucienė, V."

Thermally stimulated terahertz radiation of plasmon–phonon polaritons in GaAs by Sirmulis, E, Silenas, A, Pozela, K, Pozela, J, Juciene, V

“…The thermally stimulated excitation of radiative modes of surface plasmon–phonon polaritons in GaAs followed by the high-power terahertz (THz) radiation…”
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Selective thermal terahertz emission from GaAs and AlGaAs by Požela, K., Širmulis, E., Kašalynas, I., Šilėnas, A., Požela, J., Jucienė, V.

“…The selective thermally stimulated terahertz (THz) radiation emission from GaAs and AlGaAs alloys are experimentally observed at frequencies of coupled…”
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X-ray luminescence spectra of graded-gap AlxGa1−xAs structures irradiated by alpha particle by Šilėnas, A., Požela, J., Požela, K., Jucienė, V., Dapkus, L.

“…The influence of 241Am alpha particle irradiation on X-ray luminescence spectra of the graded-gap AlxGa1−xAs structures of different thicknesses is…”
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Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1 − xAs and In0.2Ga0.8As/AlxGa1 − xAs heterostructures in high electric fields by Požela, J., Požela, K., Raguotis, R., Jucienė, V.

“…The field dependence of drift velocity of electrons in quantum wells of selectively doped In 0.5 Ga 0.5 As/Al x In 1 − x As and In 0.2 Ga 0.8 As/Al x Ga 1 − x…”
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Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure by Pozela, J., Pozela, K., Juciene, V.

“…It is shown that capture of the surface (interface) phonons can occur in a double-barrier heterostructure in addition to the capture of bulk polar optical…”
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Interaction of electrons with optical phonons localized in a quantum well by Požela, J., Požela, K., Jucienė, V., Sužiedėlis, A., Shkolnik, A. S., Mikhrin, S. S., Mikhrin, V. S.

“…The scattering rate of electrons in a quantum well by localized polar optical and interface phonons is considered. The dependence of the force of the…”
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Drift velocity of electrons in quantum wells in high electric fields by Mokerov, V. G., Vasil’evskii, I. S., Galiev, G. B., Požela, J., Požela, K., Sužiedėlis, A., Jucienė, V., Paškević, Č.

“…It is experimentally found that the maximum drift velocity of electrons in quantum wells of differently arranged AlGaAs/GaAs heterostructures and…”
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An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well by Požela, Yu, Požela, K., Jucienė, V., Balakauskas, S., Evtikhiev, V. P., Schkolnik, A. S., Storasta, Yu, Mekys, A.

“…Confinement and localization of optical phonons in narrow phonon wells with thin phonon barriers decreases the rate of electron-phonon scattering by polar…”
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Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields by Vasil’evskii, I. S., Galiev, G. B., Matveev, Yu. A., Klimov, E. A., Požela, J., Požela, K., Sužiedėlis, A., Paškevič, Č., Jucienė, V.

“…The electron conduction in a two-dimensional channel of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum well (QW) with a δ-Si doped barrier…”
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Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures by Požela, J., Požela, K., Sužiedėlis, A., Jucienė, V., Petkun, V.

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Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields by Požela, K., Požela, J., Jucienė, V., Vasil'evskii, I.S., Galiev, G.B., Klimov, E.A., Sužiedėlis, A., Žurauskienė, N., Stankevič, V., Keršulis, S., Paškevič, Č.

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Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures by POZELA, J, POZELA, K, SILENAS, A, SIRMULIS, E, JUCIENE, V

“…Surface phonon and plasmon–phonon polariton characteristics of GaAs, Al x Ga 1− x As/GaAs, and GaN/Al 2 O 3 layered structures are investigated by means of…”
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Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier by Požela, K., Šilėnas, A., Požela, J., Jucienė, V., Galiev, G. B., Vasil’evskii, J. S., Klimov, E. A.

“…The alternating change of electron mobility values in the modulation doped InAlAs/InGaAs/InAlAs quantum well (QW) dependently on a thickness of the InAs layer…”
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Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors by Pozela, J, Pozela, K, Silenas, A, Sirmulis, E, Kasalynas, I, Juciene, V, Venckevicius, R

“…The possibilities of distinguishing highly coherent terahertz emission at a specified frequency from the incoherent thermal emission of a hot body are…”
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Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts by Šilenas, A., Požela, Yu, Požela, K., Jucienė, V., Vasil’evskii, I. S., Galiev, G. B., Pushkarev, S. S., Klimov, E. A.

“…The dependence of the electron mobility and drift velocity on the growth conditions, thickness, and doping of an InAs insert placed at the center of the…”
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Electron Mobility Engineering in 2D Structures by Požela, J., Jucienė, V., Namajūnas, A., Požela, K.

“…The electron mobility determined by electron‐confined optical phonon scattering in GaAs quantum well (QW) of AlGaAs/GaAs/AlGaAs double heterojunction structure…”
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A graded-gap detector of ionizing radiation by Požela, J., Požeal, K., Šilėnas, A., Jasutis, V., Dapkus, L., Kinduris, A., Jucienė, V.

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Electrons and phonons in quantum wells by Požela, J., Namajunas, A., Požela, K., Jucienė, V.

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Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures by Vasil’evskii, I. S., Galiev, G. B., Klimov, E. A., Požela, K., Požela, J., Jucienė, V., Sužiedėlis, A., Žurauskienė, N., Keršulis, S., Stankevič, V.

“…An increase in the electron mobility and drift velocity in high electric fields in quantum wells of selectively doped InAlAs/InGaAs/InAsAs heterostructures is…”
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Transport of electrons in a GaAs quantum well in high electric fields by Požela, J., Požela, K., Raguotis, R., Juciené, V.

“…The rates of intrasubband and intersubband scattering of electrons by polar optical and intervalley phonons are determined in relation to the electron energy…”
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