Search Results - "Jr-Tai Chen"

Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform by Ahmed, Imtiaz, Rawat, Udit, Chen, Jr-Tai, Weinstein, Dana

“…This paper presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE® ultrathin GaN/SiC platform,…”
Get full text

A GaN–SiC hybrid material for high-frequency and power electronics by Chen, Jr-Tai, Bergsten, Johan, Lu, Jun, Janzén, Erik, Thorsell, Mattias, Hultman, Lars, Rorsman, Niklas, Kordina, Olof

“…We demonstrate that 3.5% in-plane lattice mismatch between GaN (0001) epitaxial layers and SiC (0001) substrates can be accommodated without triggering…”
Get full text

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a "Buffer-Free" Heterostructure by Hult, Bjorn, Thorsell, Mattias, Chen, Jr-Tai, Rorsman, Niklas

“…The performance of a novel 'buffer-free' AlGaN/GaN-on-SiC MISHEMTs for power switching applications is demonstrated in this letter. High voltage operation with…”
Get full text

Polarity Control by Inversion Domain Suppression in N‑Polar III-Nitride Heterostructures by Zhang, Hengfang, Persson, Ingemar, Chen, Jr.-Tai, Papamichail, Alexis, Tran, Dat Q., Persson, Per O. Å., Paskov, Plamen P., Darakchieva, Vanya

“…Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity…”
Get full text

Microwave Performance of 'Buffer-Free' GaN-on-SiC High Electron Mobility Transistors by Chen, Ding-Yuan, Malmros, Anna, Thorsell, Mattias, Hjelmgren, Hans, Kordina, Olof, Chen, Jr-Tai, Rorsman, Niklas

“…High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a…”
Get full text

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure by Chen, Jr-Tai, Forsberg, Urban, Janzén, Erik

“…High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon…”
Get full text

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer by Gustafsson, Sebastian, Jr-Tai Chen, Bergsten, Johan, Forsberg, Urban, Thorsell, Mattias, Janzen, Erik, Rorsman, Niklas

“…Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a large extent affected by the buffer design, which, in this paper,…”
Get full text

Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors by Hult, Björn, Thorsell, Mattias, Jr-Tai, Chen, Rorsman, Niklas

“…Critical process modules for the fabrication of metal–insulator–semiconductor high‐electron‐mobility transistors (MISHEMTs) based on a novel ‘buffer‐free’…”
Get full text

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors by Lu, Jun, Chen, Jr-Tai, Dahlqvist, Martin, Kabouche, Riad, Medjdoub, Farid, Rosen, Johanna, Kordina, Olof, Hultman, Lars

“…Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign…”
Get full text

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures by Chen, Ding-Yuan, Wen, Kai-Hsin, Thorsell, Mattias, Lorenzini, Martino, Hjelmgren, Hans, Chen, Jr-Tai, Rorsman, Niklas

“…The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT) heterostructures with a thin undoped GaN channel layer on the top of a…”
Get full text

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs by Ferrand-Drake Del Castillo, Ragnar, Chen, Ding-Yuan, Chen, Jr-Tai, Thorsell, Mattias, Darakchieva, Vanya, Rorsman, Niklas

“…The impact of different carbon concentrations in the Al0.06Ga0.94N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is…”
Get full text

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect by Armakavicius, Nerijus, Kühne, Philipp, Papamichail, Alexis, Zhang, Hengfang, Knight, Sean, Persson, Axel, Stanishev, Vallery, Chen, Jr-Tai, Paskov, Plamen, Schubert, Mathias, Darakchieva, Vanya

“…Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive…”
Get full text

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs by Zhan, Gao, Rampazzo, Fabiana, Santi, Carlo De, Fornasier, Mirko, Meneghesso, Gaudenzio, Meneghini, Matteo, Blanck, Herve, Grunenputt, Jan, Sommer, Daniel, Chen, Ding Yuan, Wen, Kai-Hsin, Chen, Jr-Tai, Zanoni, Enrico

“…DC characteristics of AlGaN/GaN HEMTs with different thickness values of the undoped GaN channel layer were compared. An abnormal transconductance…”
Get full text

Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer by Malmros, Anna, Chen, Jr-Tai, Hjelmgren, Hans, Lu, Jun, Hultman, Lars, Kordina, Olof, Sveinbjornsson, Einar O., Zirath, Herbert, Rorsman, Niklas

“…An enhancement of the electron mobility (<inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula>) in InAlN/AlN/GaN heterostructures is…”
Get full text

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality by Zhang, Hengfang, Paskov, Plamen P., Kordina, Olof, Chen, Jr-Tai, Darakchieva, Vanya

“…Hot-wall metalorganic vapor phase epitaxy enables a superior quality of group-III nitride epitaxial layers and high electron mobility transistor structures,…”
Get full text

Observations of very fast electron traps at SiC/high-κ dielectric interfaces by Vidarsson, Arnar M., Persson, Axel R., Chen, Jr-Tai, Haasmann, Daniel, Hassan, Jawad Ul, Dimitrijev, Sima, Rorsman, Niklas, Darakchieva, Vanya, Sveinbjörnsson, Einar Ö.

“…Very fast interface traps have recently been suggested to be the main cause behind poor channel-carrier mobility in SiC metal–oxide–semiconductor field effect…”
Get full text

Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process by Bergsten, Johan, Chen, Jr-Tai, Gustafsson, Sebastian, Malmros, Anna, Forsberg, Urban, Thorsell, Mattias, Janzen, Erik, Rorsman, Niklas

“…The impact of the sharpness of the AlGaN/GaN interface in high-electron mobility transistors (HEMTs) is investigated. Two structures, one with an optimized…”
Get full text

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures by Hofmann, T., Kühne, P., Schöche, S., Chen, Jr-Tai, Forsberg, U., Janzén, E., Ben Sedrine, N., Herzinger, C. M., Woollam, J. A., Schubert, M., Darakchieva, V.

“…The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure…”
Get full text

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers by Bergsten, Johan, Thorsell, Mattias, Adolph, David, Chen, Jr-Tai, Kordina, Olof, Sveinbjornsson, Einar O., Rorsman, Niklas

“…This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on epistructures with carbon (C)-doped buffers. Metalorganic chemical…”
Get full text

High-quality N-polar GaN optimization by multi-step temperature growth process by Zhang, Hengfang, Chen, Tai, Papamichail, Alexis, Persson, Ingemar, Paskov, Plamen P., Darakchieva, Vanya

“…We report growth optimization of Nitrogen (N)-polar GaN epitaxial layers by hot-wall metal–organic vapor phase epitaxy on 4H-SiC (0001̄) with a misorientation…”
Get full text