Search Results - "Joo, Sukho"

Synchronous Pulse Plasma Operation upon Source and Bias Radio Frequencys for Inductively Coupled Plasma for Highly Reliable Gate Etching Technology by Tokashiki, Ken, Cho, Hong, Banna, Samer, Lee, Jeong-Yun, Shin, Kyoungsub, Todorow, Valentin, Kim, Woo-Seok, Bai, KeunHee, Joo, Sukho, Choe, Jeong-Dong, Ramaswamy, Kartik, Agarwal, Ankur, Rauf, Shahid, Collins, Ken, Choi, SangJun, Cho, Han, Kim, Hyun Joong, Lee, Changhun, Lymberopoulos, Dimitris, Yoon, Junho, Han, Woosung, Moon, Joo-Tae

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Etching characteristics of photoresist and low- k dielectrics by Ar/O 2 ferrite-core inductively coupled plasmas by Kim, Hyoun Woo, Lee, Jong Woo, Hwang, Woon Suk, O, Beom Hoan, Lee, Seung Gol, Park, Se-Geun, Kim, Joohee, Chung, Duck Jin, Chang, Sung Pil, Joo, Young-Chang, Joo, Junghoon, Chung, Chin Wook, Park, Wan Jae, Kang, Chang-Jin, Joo, Sukho, Park, Soon Oh, Yoo, Chung-Gon, Kim, Sung Kyeong, Lee, Joung Ho, Cho, Sang-Deog, Choi, Dae-Kyu, Kim, Keeho, Jang, Jeong-Yeol

“…We have investigated the characteristics of Ar/O 2 plasmas in terms of the photoresist (PR) and low- k material etching using a ferrite-core inductively…”
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Characteristics of Ir etching using Ar/Cl2 inductively coupled plasmas by PARK, Se-Geun, KIM, Chin-Woo, SONG, Ho-Young, HYOUN WOO KIM, JU HYUN MYUNG, JOO, Sukho, SOON OH PARK, LEE, Kyu-Mann

“…Since the etching of Ir can be considered to be problematic, due to its chemical inertness; here, the plasma etching of Ir films, using Ar/Cl2 gas in an…”
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Etching characteristics of photoresist and low-k dielectrics by Ar/O2 ferrite-core inductively coupled plasmas by HYOUN WOO KIM, JONG WOO LEE, JOO, Junghoon, CHIN WOOK CHUNG, WAN JAE PARK, KANG, Chang-Jin, JOO, Sukho, SOON OH PARK, YOO, Chung-Gon, SUNG KYEONG KIM, JOUNG HO LEE, CHO, Sang-Deog, WOON SUK HWANG, CHOI, Dae-Kyu, KIM, Keeho, JANG, Jeong-Yeol, BEOM HOAN O, SEUNG GOL LEE, PARK, Se-Geun, KIM, Joohee, DUCK JIN CHUNG, SUNG PIL CHANG, JOO, Young-Chang

“…We have investigated the characteristics of Ar/O2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled…”
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