Search Results - "Jonsson, Rolf"

  • Showing 1 - 16 results of 16
Refine Results
  1. 1

    A W-band power detector RFIC design in 0.13 μm SiGe BiCMOS process by Jonsson, Rolf, Reyaz, Shakila Bint, Malmqvist, Robert, Kaynak, Mehmet

    Published in Microwave and optical technology letters (01-02-2015)
    “…ABSTRACT This article presents the results of a wideband power detector radio frequency integrated circuit design intended for W‐band passive imaging sensors…”
    Get full text
    Journal Article
  2. 2

    A W-band power detector RFIC design in 0.13 µm SiGe BiCMOS process by Jonsson, Rolf, Reyaz, Shakila Bint, Malmqvist, Robert, Kaynak, Mehmet

    Published in Microwave and optical technology letters (01-02-2015)
    “…This article presents the results of a wideband power detector radio frequency integrated circuit design intended for W-band passive imaging sensors. The power…”
    Get full text
    Journal Article
  3. 3

    5-35 GHz broadband if amplifier section in 0.13 μm SiGe technology for W-band heterodyne receiver RFICs by Reyaz, Shakila Bint, Jonsson, Rolf, Gustafsson, Andreas, Malmqvist, Robert, Strodl, Andreas, Valenta, Václav, Schumacher, Hermann, Kaynak, Mehmet

    Published in Microwave and optical technology letters (01-10-2015)
    “…ABSTRACT This letter presents the results of a broadband intermediate frequency (IF) section radio frequency integrated circuit designed for a W‐band…”
    Get full text
    Journal Article
  4. 4

    5-35 GHz broadband if amplifier section in 0.13 µm SiGe technology for W-band heterodyne receiver RFICs by Reyaz, Shakila Bint, Jonsson, Rolf, Gustafsson, Andreas, Malmqvist, Robert, Strodl, Andreas, Valenta, Václav, Schumacher, Hermann, Kaynak, Mehmet

    Published in Microwave and optical technology letters (01-10-2015)
    “…This letter presents the results of a broadband intermediate frequency (IF) section radio frequency integrated circuit designed for a W-band heterodyne…”
    Get full text
    Journal Article
  5. 5

    High-Linearity and Low-Noise Tunable C/X-Band GaN Filters for Robust Highly Integrated Front-Ends by Malmqvist, Robert, Khedri, Morteza, Jonsson, Rolf

    “…This paper presents two tunable recursive active filters fabricated in 250 nm and 150 nm GaN MMIC processes. The first filter is tunable at 9.8-10.7 GHz with a…”
    Get full text
    Conference Proceeding
  6. 6

    Compact High-Gain Driver Amplifier MMICs for 60 nm GaN-on-Si W-Band Single-Chip Transceivers by Malmqvist, Robert, Jonsson, Rolf, Bao, Mingquan, LeBlanc, Remy, Andersson, Kristoffer

    “…This paper presents compact W-band driver amplifier (DA) MMICs fabricated in a 60 nm GaN-on-Si process. The measured small-signal gain of single-stage, 4-stage…”
    Get full text
    Conference Proceeding
  7. 7

    A W-Band Up-Conversion Mixer with Integrated LO Frequency Doublers in a 60 nm GaN Technology by Bao, Mingquan, Malmqvist, Robert, Jonsson, Rolf, Hansryd, Jonas, Andersson, Kristoffer

    “…A W-band up-conversion mixer with integrated frequency doublers is designed and manufactured in a 60 nm GaN-on-Si technology. The mixer is a single-balanced…”
    Get full text
    Conference Proceeding
  8. 8

    A W-Band Single-Chip Receiver in a 60 nm GaN-on-Silicon Foundry Process by Malmqvist, Robert, Jonsson, Rolf, Bao, Mingquan, LeBlanc, Remy, Buisman, Koen, Fager, Christian, Andersson, Kristoffer

    “…This paper presents a compact W-band heterodyne receiver MMIC realised in a 60 nm GaN-on-Si foundry process. The single-chip receiver consists of an LNA with a…”
    Get full text
    Conference Proceeding
  9. 9

    E/W-Band CPW-based Amplifier MMICs Fabricated in a 60 nm GaN-on-Silicon Foundry Process by Malmqvist, Robert, Jonsson, Rolf, Bernland, Anders, Bao, Mingquan, LeBlanc, Remy, Buisman, Koen, Fager, Christian, Andersson, Kristoffer

    “…This paper presents an experimental evaluation of two co-planar waveguide (CPW) based E/W-band amplifier MMICs realised in a 60 nm GaN-on-Si foundry process. A…”
    Get full text
    Conference Proceeding
  10. 10

    Computational load pull simulations of SiC microwave power transistors by Jonsson, R., Wahab, Q., Rudner, S., Svensson, C.

    Published in Solid-state electronics (01-11-2003)
    “…The design of power transistors for microwave applications requires a good understanding of their large signal behaviour in a real circuit context. The…”
    Get full text
    Journal Article
  11. 11
  12. 12

    Single-stage, high efficiency, 26-watt power amplifier using SiC LE-MESFET by Azam, S., Jonsson, R., Wahab, Q.

    Published in 2006 Asia-Pacific Microwave Conference (01-12-2006)
    “…This paper describes a single-stage 26 W negative feedback power amplifier, covering the frequency range 200-500 MHz using a 6 mm gate width SiC lateral…”
    Get full text
    Conference Proceeding
  13. 13
  14. 14
  15. 15

    SSC microgravity sounding rocket program MASER by Jonsson, R

    Published in Acta astronautica (01-01-1988)
    “…The Swedish Microgravity Sounding Rocket program MASER is presented. Especially the MASER 1 payload is depicted, but also an outlook for the future…”
    Get more information
    Journal Article
  16. 16