Search Results - "Jongseob Kim"

The Role of Intrinsic Defects in Methylammonium Lead Iodide Perovskite by Kim, Jongseob, Lee, Sung-Hoon, Lee, Jung Hoon, Hong, Ki-Ha

“…One of the major merits of CH3NH3PbI3 perovskite as an efficient absorber material for the photovoltaic cell is its long carrier lifetime. We investigate the…”
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Strain-Driven Electronic Band Structure Modulation of Si Nanowires by Hong, Ki-Ha, Kim, Jongseob, Lee, Sung-Hoon, Shin, Jai Kwang

“…One of the major challenges toward Si nanowire (SiNW) based photonic devices is controlling the electronic band structure of the Si nanowire to obtain a direct…”
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N2O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs by Park, Jun Hyuk, Hwang, Sun-Kyu, Kim, Joonyong, Jeon, Woochul, Hwang, Injun, Oh, Jaejoon, Kim, Boram, Park, Younghwan, Shin, Dong-Chul, Park, Jong-Bong, Kim, Jongseob

“…This work investigates the effect of N2O plasma treatment on the reliability of p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), specifically…”
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Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs by Hwang, Injun, Kim, Jongseob, Chong, Soogine, Choi, Hyun-Sik, Hwang, Sun-Kyu, Oh, Jaejoon, Shin, Jai Kwang, Chung, U-In

“…This letter studies the current collapse phenomenon during switching in p-GaN gate AlGaN/GaN high-electron-mobility transistors. It is found that channel hot…”
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Fabrication of vertical GaN Schottky barrier diodes on free-standing GaN substrates and their characterization by Jung, Gyeong-Hun, Park, Minwoo, Kim, Kyoung-Kook, Kim, Jongseob, Cho, Jaehee

“…Vertical GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates have garnered significant attention in recent years. Using a free-standing GaN…”
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Impacts of cation ordering on bandgap dispersion of double perovskites by Kim, Jongseob, Kim, Hyungjun, Chandran, Mahesh, Lee, Seung-Cheol, Im, Sang Hyuk, Hong, Ki-Ha

“…Double perovskites using dual metal cations are promising candidates for Pb-free perovskites. This study shows that the electronic structures of double…”
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Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage by HWANG, Injun, OH, Jaejoon, HYUK SOON CHOI, KIM, Jongseob, CHOI, Hyoji, KIM, Joonyong, CHONG, Soogine, SHIN, Jaikwang, CHUNG, U-In

“…A pathway to increase the threshold voltage ( V TH ) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the…”
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Asymmetric Doping in Silicon Nanostructures: The Impact of Surface Dangling Bonds by Hong, Ki-Ha, Kim, Jongseob, Lee, Jung Hoon, Shin, Jaikwang, Chung, U-In

“…We investigate peculiar dopant deactivation behaviors of Si nanostrucures with first principle calculations and reveal that surface dangling bonds (SDBs) on Si…”
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Effects of oxygen plasma treatment on V th uniformity of recessed-gate AlGaN/GaN HEMTs by Hong, Ki-Ha, Choi, Hyuk Soon, Hwang, Injun, Kim, Jongseob

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Effects of oxygen plasma treatment on Vth uniformity of recessed-gate AlGaN/GaN HEMTs by Hong, Ki-Ha, Choi, Hyuk Soon, Hwang, Injun, Kim, Jongseob

“…Normally-off AlGaN/GaN HEMTs have been fabricated by employing a recessed-gate structure and oxygen plasma treatment and outstanding improvement of V th…”
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Channel-size dependent dopant placement in silicon nanowires by Hoon Ryu, Jongseob Kim, Ki-Ha Hong

“…Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp 3 d 5 s* tight-binding approach…”
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Novel Structures for the Excess Electron State of the Water Hexamer and the Interaction Forces Governing the Structures by Lee, Sik, Kim, Jongseob, Lee, Sang Joo, Kim, Kwang S.

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High threshold voltage p-GaN gate power devices on 200 mm Si by Jongseob Kim, Sun-Kyu Hwang, Injun Hwang, Hyoji Choi, Soogine Chong, Hyun-Sik Choi, Woochul Jeon, Hyuk Soon Choi, Jun Yong Kim, Young Hwan Park, Kyung Yeon Kim, Jong-Bong Park, Jong-Bong Ha, Ki Yeol Park, Jaejoon Oh, Jai Kwang Shin, U-In Chung, In-Kyeong Yoo, Kinam Kim

“…In this paper, we present high threshold voltage, low on-resistance, and high speed GaN-HEMT devices using a p-GaN layer in the gate stack. There are three…”
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Ab Initio Study of Long-Distance Electron Tunneling in a Model Peptide System by Kim, Jongseob, Stuchebrukhov, Alexei

“…The method of tunneling currents developed earlier by one of the authors is applied to study electron tunneling dynamics in a model organometallic…”
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Roles of SnX2 (X = F, Cl, Br) Additives in Tin-Based Halide Perovskites toward Highly Efficient and Stable Lead-Free Perovskite Solar Cells by Heo, Jin Hyuck, Kim, Jongseob, Kim, Hyungjun, Moon, Sang Hwa, Im, Sang Hyuk, Hong, Ki-Ha

“…Preserving the stability of Sn-based halide perovskites is a primary concern in developing photovoltaic light-absorbing materials for lead-free perovskite…”
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Quantum mechanical probabilistic structure of the benzene-water complex by Kim, Kwang S., Lee, Jin Yong, Choi, Hyuk Soon, Kim, Jongseob, Jang, Jee Hwan

“…On the realistic energy hypersurface of the floppy benzene-water complex obtained with high-levels of ab inition theory, the experimental structure, rotational…”
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Band Gap Engineering of Cs3Bi2I9 Perovskites with Trivalent Atoms Using a Dual Metal Cation by Hong, Ki-Ha, Kim, Jongseob, Debbichi, Lamjed, Kim, Hyungjun, Im, Sang Hyuk

“…Ternary metal halides (A3X2I9) have attracted considerable interest because they have good stability and reduced toxicity compared with Pb-based halide…”
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Importance of Orbital Interactions in Determining Electronic Band Structures of Organo-Lead Iodide by Kim, Jongseob, Lee, Seung-Cheol, Lee, Sung-Hoon, Hong, Ki-Ha

“…Organic–inorganic perovskites are promising materials for improving the efficiency of solar cells, but there are still uncovered issues on the understanding of…”
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Extraction of Dynamic Threshold Voltage in Resistive Load Hard Switching Operation of Schottky-Type p-GaN Gate HEMT by Hwang, Injun, Oh, Jaejoon, Hwang, Sun-Kyu, Kim, Boram, Park, Jun Hyuk, Kim, Joonyong, Kim, Jongseob

“…Threshold voltage (VTh) drift of Schottky-type p-GaN gate high-electron mobility transistor (HEMT) was analyzed under high-voltage and hard switching…”
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Effects of SiO2 passivation on the sheet carrier density of two-dimensional electron gas formed in the AlGaN/GaN interface by Kim, Jaeho, Oh, Jaejoon, Kim, Jongseob, Cho, Jaehee

“…Increasing the thickness of the SiO2 dielectric layer used to electrically isolate AlGaN/GaN high-electron-mobility transistors led to a gradual increase in…”
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