Search Results - "Jong Ryeol Yoo"

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  1. 1
    Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques

    Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques by Kim, Chul-Sung, Ku, Ja-Hum, Lee, Byeong-Chan, Yoo, Jong-Ryeol, Lee, Deok-Hyung, Choi, Siyoung, Chung, U-In, Moon, Joo-Tae

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  2. 2
    Improved Cell Performance for sub-50 nm DRAM with Manufacturable Bulk FinFET Structure

    Improved Cell Performance for sub-50 nm DRAM with Manufacturable Bulk FinFET Structure by Deok-Hyung Lee, Sun-Ghil Lee, Jong Ryeol Yoo, Gyoung-Ho Buh, Guk Hyon Yon, Dong-Woon Shin, Dong Kyu Lee, Hyun-Sook Byun, In Soo Jung, Tai-su Park, Yu Gyun Shin, Siyoung Choi, U-In Chung, Joo-Tae Moon, Byung-Il Ryu

    Published in 2007 IEEE Symposium on VLSI Technology (01-06-2007)
    “…FinFET, the milestone for sub-50 nm DRAM cell transistor has been successfully demonstrated by a unique fabricating method with novel concept. We obtained a…”
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  3. 3
    High performance cell technology featuring sub-100nm DRAM with multi-gigabit density

    High performance cell technology featuring sub-100nm DRAM with multi-gigabit density by LEE, Byung-Chan, YOO, Jong-Ryeol, LEE, Deok-Hyung, KIM, Cheol-Sung, JUNG, In-Soo, CHOI, Siyoung, CHUNG, U-In, MOON, Joo-Tae

    “…Fully metal embedded cell technologies, including poly-Si/W/sub x/N/W gate, Co salicide with elevated source/drain using UHV-selective epitaxial growth and…”
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  4. 4
    Deep Trench Isolation for Crosstalk Suppression in Active Pixel Sensors with 1.7 µm Pixel Pitch

    Deep Trench Isolation for Crosstalk Suppression in Active Pixel Sensors with 1.7 µm Pixel Pitch by Park, Byung Jun, Jung, Jongwan, Moon, Chang-Rok, Hwang, Sung Ho, Lee, Yong Woo, Kim, Dae Woong, Paik, Kee Hyun, Yoo, Jong Ryeol, Lee, Duck Hyung, Kim, Kinam

    Published in Japanese Journal of Applied Physics (01-04-2007)
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