Search Results - "Joishi, Chandan"

β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination by Dhara, Sushovan, Kalarickal, Nidhin Kurian, Dheenan, Ashok, Joishi, Chandan, Rajan, Siddharth

“…In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-Ga2O3 Schottky barrier diodes (SBDs). The proposed design…”
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β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching by Dhara, Sushovan, Kalarickal, Nidhin Kurian, Dheenan, Ashok, Rahman, Sheikh Ifatur, Joishi, Chandan, Rajan, Siddharth

“…β-Ga2O3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of…”
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Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor by Rahman, Sheikh Ifatur, Awwad, Mohammad, Joishi, Chandan, Jamal-Eddine, Zane, Gunning, Brendan, Armstrong, Andrew, Rajan, Siddharth

“…GaN/InGaN microLEDs are a very promising technology for next-generation displays. Switching control transistors and their integration are key components in…”
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Publisher's Note: “β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching” [Appl. Phys. Lett. 123, 023503 (2023)] by Dhara, Sushovan, Kalarickal, Nidhin Kurian, Dheenan, Ashok, Rahman, Sheikh Ifatur, Joishi, Chandan, Rajan, Siddharth

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Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3 by Dhara, Sushovan, Dheenan, Ashok, Kalarickal, Nidhin Kurian, Huang, Hsien-Lien, Islam, Ahmad Ehteshamul, Joishi, Chandan, Fiedler, Andreas, McGlone, Joe F., Ringel, Steven A., Hwang, Jinwoo, Rajan, Siddharth

“…In this work, we have investigated plasma-assisted deposition of Al2O3 on HVPE (001) β-Ga2O3 and evaluated the dielectric quality from electrical measurements…”
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Demonstration of gallium oxide nano-pillar field emitter arrays by Kim, Taeyoung, Joishi, Chandan, Xia, Zhanbo, Kalarickal, Nidhin Kurian, Selcu, Camelia, Back, Tyson, Ludwick, Jonathan, Rajan, Siddharth

“…We demonstrate field emission characteristics of β-Ga2O3 nano-pillar arrays fabricated using a damage-free etching technique. The technique utilizes Ga flux in…”
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Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks by Kothari, Shraddha, Joishi, Chandan, Nejad, Hasan, Variam, Naushad, Lodha, Saurabh

“…This work reports Vfb tuning of TiN/HfO2 gate stacks on Ge using low energy plasma-assisted doping with N2 without significant impact on gate capacitance and…”
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Breakdown Characteristics of \beta -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors by Joishi, Chandan, Zhang, Yuewei, Xia, Zhanbo, Sun, Wenyuan, Arehart, Aaron R., Ringel, Steven, Lodha, Saurabh, Rajan, Siddharth

“…We investigate voltage breakdown of a <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3…”
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Trapping Effects in Si [Formula Omitted]-Doped [Formula Omitted]-Ga2O3 MESFETs on an Fe-Doped [Formula Omitted]-Ga2O3 Substrate by Mcglone, Joe F, Xia, Zhanbo, Zhang, Yuewei, Joishi, Chandan, Lodha, Saurabh, Rajan, Siddharth, Ringel, Steven A, Arehart, Aaron R

“…Threshold voltage instability was observed on [Formula Omitted]-Ga2O3 transistors using double-pulsed current–voltage and constant drain current deep level…”
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Electrostatic Engineering of β-Ga2O3 Trench Metal-Insulator-Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack by Lengare, Ravikiran, Joishi, Chandan, Lodha, Saurabh

“…We predict improved electrostatic fields in a <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga2O3trench…”
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Electrostatic Engineering of β-Ga 2 O 3 Trench Metal–Insulator–Semiconductor Schottky Barrier Diodes Using a Bilayer Dielectric Stack by Lengare, Ravikiran, Joishi, Chandan, Lodha, Saurabh

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Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors by Zhang, Yuewei, Joishi, Chandan, Xia, Zhanbo, Brenner, Mark, Lodha, Saurabh, Rajan, Siddharth

“…In this work, we demonstrate modulation-doped β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors. The maximum sheet carrier density for a…”
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Tunnel Junction-Enabled AlGaN/GaN Heterojunction Bipolar Transistors With All n-Type Contacts by Joishi, Chandan, Rahman, Sheikh Ifatur, Rajan, Siddharth

“…The performance of contemporary GaN heterojunction bipolar transistors (HBTs) is currently limited by challenges associated with the formation of p-type…”
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Delta Doped \beta -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts by Xia, Zhanbo, Joishi, Chandan, Krishnamoorthy, Sriram, Bajaj, Sanyam, Zhang, Yuewei, Brenner, Mark, Lodha, Saurabh, Rajan, Siddharth

“…We report silicon delta-doped <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 metal semiconductor field effect…”
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Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures by Zhang, Yuewei, Neal, Adam, Xia, Zhanbo, Joishi, Chandan, Johnson, Jared M., Zheng, Yuanhua, Bajaj, Sanyam, Brenner, Mark, Dorsey, Donald, Chabak, Kelson, Jessen, Gregg, Hwang, Jinwoo, Mou, Shin, Heremans, Joseph P., Rajan, Siddharth

“…In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the β-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping…”
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beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz by Xia, Zhanbo, Xue, Hao, Joishi, Chandan, Mcglone, Joe, Kalarickal, Nidhin Kurian, Sohel, Shahadat H., Brenner, Mark, Arehart, Aaron, Ringel, Steven, Lodha, Saurabh, Lu, Wu, Rajan, Siddharth

“…As an ultra-wide bandgap semiconductor, <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 has attracted great attention…”
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Electrothermal Characteristics of Delta-Doped \beta -Ga2O3 Metal-Semiconductor Field-Effect Transistors by Kumar, Nitish, Joishi, Chandan, Xia, Zhanbo, Rajan, Sidhharth, Kumar, Satish

“…A 2-D electrothermal model of delta-doped beta-gallium oxide (β-Ga 2 O 3 ) metal-semiconductor field-effect transistor (MESFET) is developed by using TCAD…”
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Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor by Krishnamoorthy, Sriram, Xia, Zhanbo, Joishi, Chandan, Zhang, Yuewei, McGlone, Joe, Johnson, Jared, Brenner, Mark, Arehart, Aaron R., Hwang, Jinwoo, Lodha, Saurabh, Rajan, Siddharth

“…Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the…”
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Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 Modulation-Doped Field-Effect Transistors by Zhang, Yuewei, Xia, Zhanbo, Mcglone, Joe, Sun, Wenyuan, Joishi, Chandan, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth

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Trapping Effects in Si \delta -Doped \beta -Ga2O3 MESFETs on an Fe-Doped \beta -Ga2O3 Substrate by Mcglone, Joe F., Xia, Zhanbo, Zhang, Yuewei, Joishi, Chandan, Lodha, Saurabh, Rajan, Siddharth, Ringel, Steven A., Arehart, Aaron R.

“…Threshold voltage instability was observed on <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 transistors using…”
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