Search Results - "Johnson, M N"

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    Mycotoxins in a changing global environment – A review by Marroquín-Cardona, A.G., Johnson, N.M., Phillips, T.D., Hayes, A.W.

    Published in Food and chemical toxicology (01-07-2014)
    “…•Mycotoxins in food are unavoidable and global environmental conditions may increase mycotoxin presence in foods.•Infants and other susceptible populations…”
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    Highly radiative nature of ultra-thin c-plane Al-rich AlGaN/AlN quantum wells for deep ultraviolet emitters by Haughn, C. R., Rupper, G., Wunderer, T., Yang, Z., Johnson, N. M., Wraback, M., Garrett, G. A.

    Published in Applied physics letters (11-03-2019)
    “…Temperature-dependent photoluminescence (PL) lifetimes were measured for a series of ultra-thin c-plane Al0.61Ga0.39N/AlN multiple quantum wells (QWs) on bulk…”
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    High Proton Conductivity of Water Channels in a Highly Ordered Nanowire by Wang, H., Xu, X., Johnson, N. M., Dandala, N. K. R., Ji, H.-F.

    Published in Angewandte Chemie International Edition (23-12-2011)
    “…A proton‐conductive material based on a crystalline assembly of trimesic acid and melamine (TMA⋅M, see picture) is reported. Because of the ordered structure…”
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    Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars by Chern, G. D., Tureci, H. E., Stone, A. Douglas, Chang, R. K., Kneissl, M., Johnson, N. M.

    Published in Applied physics letters (01-09-2003)
    “…We report unidirectional emission from lasing in In0.09Ga0.91N/In0.01Ga0.99N multiple-quantum-well spiral micropillars. Our imaging technique shows that the…”
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    Characterization and safety of uniform particle size NovaSil clay as a potential aflatoxin enterosorbent by Marroquín-Cardona, A., Deng, Y., Garcia-Mazcorro, J.F., Johnson, N.M., Mitchell, N.J., Tang, L., Robinson, A., Taylor, J.F., Wang, J.-S., Phillips, T.D.

    Published in Applied clay science (01-12-2011)
    “…NovaSil (NS) clay, a common anti-caking agent in animal feeds, has been shown to adsorb aflatoxins and diminish their bioavailability in multiple animal…”
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    In vitro and in vivo characterization of mycotoxin-binding additives used for animal feeds in Mexico by Marroquín-Cardona, A., Deng, Y., Taylor, J.F., Hallmark, C.T., Johnson, N.M., Phillips, T.D.

    “…The study was conducted to characterize and compare twelve different additives distributed in Mexico as mycotoxin binders utilizing: (1) equilibrium isothermal…”
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    Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off by Wong, W. S., Sands, T., Cheung, N. W., Kneissl, M., Bour, D. P., Mei, P., Romano, L. T., Johnson, N. M.

    Published in Applied physics letters (06-09-1999)
    “…Indium–gallium nitride (InGaN) multiple-quantum-well (MQW) light-emitting diode (LED) membranes, prefabricated on sapphire growth substrates, were created…”
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    Resolving pm wavelength shifts in optical sensing by SCHMIDT, O, KIESEL, P, MOHTA, S, JOHNSON, N. M

    Published in Applied physics. B, Lasers and optics (01-03-2007)
    “…The reflection or transmission properties of one and two-dimensional photonic crystals are widely used for optical sensing applications. A variety of optical…”
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    Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells by Northrup, J. E., Chua, C. L., Yang, Z., Wunderer, T., Kneissl, M., Johnson, N. M., Kolbe, T.

    Published in Applied physics letters (09-01-2012)
    “…For AlGaN-based multi-quantum-well light emitters grown on c-plane substrates there is a tendency for the polarization of the emitted light to switch from…”
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    Activation energies of Si donors in GaN by Götz, W., Johnson, N. M., Chen, C., Liu, H., Kuo, C., Imler, W.

    Published in Applied physics letters (27-05-1996)
    “…The electronic properties of Si donors in heteroepitaxial layers of GaN were investigated. The n-type GaN layers were grown by metalorganic chemical vapor…”
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    Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition by Götz, W., Johnson, N. M., Walker, J., Bour, D. P., Street, R. A.

    Published in Applied physics letters (29-01-1996)
    “…The activation kinetics of acceptors was investigated for heteroepitaxial layers of GaN, doped with Mg. After growth, the samples were exposed to isochronal…”
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    Near-bandedge cathodoluminescence of an AlN homoepitaxial film by Silveira, E., Freitas, J. A., Kneissl, M., Treat, D. W., Johnson, N. M., Slack, G. A., Schowalter, L. J.

    Published in Applied physics letters (03-05-2004)
    “…Cathodoluminescence experiments were performed on a high-quality AlN epitaxial film grown by organometallic vapor phase epitaxy on a large single crystal AlN…”
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    Large band gap bowing of InxGa1−xN alloys by McCluskey, M. D., Van de Walle, C. G., Master, C. P., Romano, L. T., Johnson, N. M.

    Published in Applied physics letters (25-05-1998)
    “…Band gap measurements have been performed on strained InxGa1−xN epilayers with x⩽0.12. The experimental data indicate that the bowing of the band gap is much…”
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    Phase separation in InGaN/GaN multiple quantum wells by McCluskey, M. D., Romano, L. T., Krusor, B. S., Bour, D. P., Johnson, N. M., Brennan, S.

    Published in Applied physics letters (06-04-1998)
    “…Evidence is presented for phase separation in In0.27Ga0.73N/GaN multiple quantum wells. After annealing for 40 h at a temperature of 950 °C, the absorption…”
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