Search Results - "Johnson, Jared M."

Remote epitaxy through graphene enables two-dimensional material-based layer transfer by Kim, Yunjo, Cruz, Samuel S., Lee, Kyusang, Alawode, Babatunde O., Choi, Chanyeol, Song, Yi, Johnson, Jared M., Heidelberger, Christopher, Kong, Wei, Choi, Shinhyun, Qiao, Kuan, Almansouri, Ibraheem, Fitzgerald, Eugene A., Kong, Jing, Kolpak, Alexie M., Hwang, Jinwoo, Kim, Jeehwan

“…Conventional epitaxy is of limited application, but by placing a monolayer of graphene between the substrate and the so-called epilayer grown on top, its scope…”
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Atomic scale mechanism of β to γ phase transformation in gallium oxide by Huang, Hsien-Lien, Johnson, Jared M., Chae, Christopher, Senckowski, Alexander, Wong, Man Hoi, Hwang, Jinwoo

“…We report the detailed mechanism behind the β to γ phase transformation in Sn-doped and Si-implanted Ga2O3 that we determined based on the direct observation…”
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High current density 2D/3D MoS2/GaN Esaki tunnel diodes by Krishnamoorthy, Sriram, Lee, Edwin W., Lee, Choong Hee, Zhang, Yuewei, McCulloch, William D., Johnson, Jared M., Hwang, Jinwoo, Wu, Yiying, Rajan, Siddharth

“…The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D…”
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Interband tunneling for hole injection in III-nitride ultraviolet emitters by Zhang, Yuewei, Krishnamoorthy, Sriram, Johnson, Jared M., Akyol, Fatih, Allerman, Andrew, Moseley, Michael W., Armstrong, Andrew, Hwang, Jinwoo, Rajan, Siddharth

“…Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor…”
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Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs by Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Johnson, Jared M., Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

“…In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide bandgap AlGaN, and we…”
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Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy by Im, Soohyun, Chen, Zhen, Johnson, Jared M., Zhao, Pengyang, Yoo, Geun Hee, Park, Eun Soo, Wang, Yunzhi, Muller, David A., Hwang, Jinwoo

“…•A new STEM technique that can determine the structural heterogeneity in disordered materials is demonstrated.•Structural heterogeneity is determined by…”
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Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy by Johnson, Jared M., Im, Soohyun, Windl, Wolfgang, Hwang, Jinwoo

“…We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter…”
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Low-Pressure Chemical Vapor Deposition of In2O3 Films on Off-Axis c‑Sapphire Substrates by Karim, Md Rezaul, Feng, Zixuan, Johnson, Jared M, Zhu, Menglin, Hwang, Jinwoo, Zhao, Hongping

“…Heteroepitaxial In2O3 films were grown on transparent c-sapphire substrates with 0, 3.5, 6, and 8° off-axis angles via low-pressure chemical vapor deposition…”
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LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates by Rafique, Subrina, Karim, Md Rezaul, Johnson, Jared M., Hwang, Jinwoo, Zhao, Hongping

“…This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor…”
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MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping by Anhar Uddin Bhuiyan, A F M, Feng, Zixuan, Johnson, Jared M., Chen, Zhaoying, Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

“…(010) β-(AlxGa1−x)2O3 thin films were grown on (010) β-Ga2O3 substrates via metalorganic chemical vapor deposition with up to 40% Al incorporation by…”
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Dual Silicon Oxycarbide Accelerated Growth of Well‐Ordered Graphitic Networks for Electronic and Thermal Applications by Garman, Paul D., Johnson, Jared M., Talesara, Vishank, Yang, Hao, Du, Xinpeng, Pan, Junjie, Zhang, Dan, Yu, Jianfeng, Cabrera, Eusebio, Yen, Ying‐Chieh, Castro, Jose, Lu, Wu, Zhao, Ji‐Cheng, Hwang, Jinwoo, Lee, L. James

“…While effective in circumventing the transfer process of graphene films from metals to insulating substrates, graphene chemical vapor deposition (CVD) methods…”
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Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3 by Johnson, Jared M, Chen, Zhen, Varley, Joel B, Jackson, Christine M, Esmat Farzana, Zhang, Zeng, Arehart, Aaron R, Hsien-Lien Huang, Genc, Arda, Ringel, Steven A, Chris G. Van de Walle, Muller, David A, Hwang, Jinwoo

“…Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role…”
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Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency by Zhang, Yuewei, Jamal-Eddine, Zane, Akyol, Fatih, Bajaj, Sanyam, Johnson, Jared M., Calderon, Gabriel, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., Hwang, Jinwoo, Rajan, Siddharth

“…We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by…”
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Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films by Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Sarker, Jith, Zhu, Menglin, Karim, Md Rezaul, Mazumder, Baishakhi, Hwang, Jinwoo, Zhao, Hongping

“…This paper investigated the growth of (AlxGa1−x)2O3 thin films on semi-insulating (010) Ga2O3 substrates over the entire Al composition range (0% < x ≤ 100%)…”
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Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3 by Huang, Hsien-Lien, Chae, Christopher, Johnson, Jared M., Senckowski, Alexander, Sharma, Shivam, Singisetti, Uttam, Wong, Man Hoi, Hwang, Jinwoo

“…Atomic scale details of the formation of point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high…”
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Atomic scale investigation of chemical heterogeneity in β-(AlxGa1−x)2O3 films using atom probe tomography by Mazumder, Baishakhi, Sarker, Jith, Zhang, Yuewei, Johnson, Jared M., Zhu, Menglin, Rajan, Siddharth, Hwang, Jinwoo

“…We investigated atomic scale chemical heterogeneity in β-(AlxGa1−x)2O3 thin films with different aluminum (Al) concentrations using atom probe tomography. Two…”
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Molecular beam epitaxy of GaN on 2H–MoS2 by Lee, Choong Hee, Zhang, Yuewei, Johnson, Jared M., Koltun, Rachel, Gambin, Vincent, Jamison, John S., Myers, Roberto C., Hwang, Jinwoo, Rajan, Siddharth

“…Recent interest in the heterogeneous integration of two-dimensional (2D) materials with three-dimensional (3D) semiconductors has resulted in the…”
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Band offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces grown via MOCVD by Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

“…The valence and conduction band offsets at (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces with the increasing Al composition are determined via x-ray…”
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MOCVD growth of β-phase (AlxGa1−x)2O3 on ( 2 ¯01) β-Ga2O3 substrates by Bhuiyan, A F M Anhar Uddin, Feng, Zixuan, Johnson, Jared M., Huang, Hsien-Lien, Hwang, Jinwoo, Zhao, Hongping

“…β-(AlxGa1−x)2O3 thin films are grown on ( 2 ¯01) β-Ga2O3 substrates via metal organic chemical vapor deposition to investigate the solubility of Al in β-phase…”
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Engineering 1D Quantum Stripes from Superlattices of 2D Layered Materials by Gruenewald, John H., Kim, Jungho, Kim, Heung Sik, Johnson, Jared M., Hwang, Jinwoo, Souri, Maryam, Terzic, Jasminka, Chang, Seo Hyoung, Said, Ayman, Brill, Joseph W., Cao, Gang, Kee, Hae‐Young, Seo, Sung S. Ambrose

“…Dimensional tunability from two dimensions to one dimension is demonstrated for the first time using an artificial superlattice method in synthesizing 1D…”
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