Search Results - "Jo, Minseok"

Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices by Cho, Byungjin, Kim, Tae-Wook, Song, Sunghoon, Ji, Yongsung, Jo, Minseok, Hwang, Hyunsang, Jung, Gun-Young, Lee, Takhee

“…One diode–one resistor (1D–1R) hybrid‐type devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable…”
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Domain Knowledge-Based Neural Network Architecture for End-to-End Multiuser Precoding in Massive MIMO System by Jo, Minseok, Lee, Sangrim, Kim, Bonghoe, Lee, Kyungho, Jung, Ikjoo

“…This paper investigates an end-to-end multiuser precoding in massive multiple-input multiple-output (MIMO) system. We propose a novel neural network…”
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Clickable Object Detection Network for a Wide Range of Mobile Screen Resolutions by Kang, Boseon, Jo, Minseok, Jeong, Chang-Sung

“…Recently, as the development cycle of applications has been shortened, it is important to develop rapid and accurate application testing technology. Since…”
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Investigation of State Stability of Low-Resistance State in Resistive Memory by Jubong Park, Minseok Jo, Bourim, El Mostafa, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang

“…We investigated the state stability of the low-resistance state (LRS) in a resistive switching memory having a Pt/Cu:MoO x /GdO x /Pt structure. Various…”
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Nonvolatile Memory Functionality of ZnO Nanowire Transistors Controlled by Mobile Protons by Yoon, Jongwon, Hong, Woong-Ki, Jo, Minseok, Jo, Gunho, Choe, Minhyeok, Park, Woojin, Sohn, Jung Inn, Nedic, Stanko, Hwang, Hyungsang, Welland, Mark E, Lee, Takhee

“…We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure…”
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Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect by PARK, Jubong, JO, Minseok, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, LEE, Wootae, SHIN, Jungho, HWANG, Hyunsang

“…Improved switching uniformity and speed were demonstrated using a filament-type resistive memory. By using a gradual reset operation, a leaky high resistance,…”
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Development of a Semiempirical Compact Model for DC/AC Cell Operation of HfOx-Based ReRAMs by JINWOO NOH, MINSEOK JO, CHANG YONG KANG, GILMER, David, KIRSCH, Paul, LEE, Jack C, BYOUNG HUN LEE

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Materials and process aspect of cross-point RRAM (invited) by Lee, Joonmyoung, Jo, Minseok, Seong, Dong-jun, Shin, Jungho, Hwang, Hyunsang

“…A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of…”
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Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall by Maeng, Jongsun, Jo, Minseok, Kang, Seok-Ju, Kwon, Min-Ki, Jo, Gunho, Kim, Tae-Wook, Seo, Jaeduck, Hwang, Hyunsang, Kim, Dong-Yu, Park, Seong-Ju, Lee, Takhee

“…We report the characteristics of a p-n heterojunction diode comprised of a poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) as the…”
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Development of a Semiempirical Compact Model for DC/AC Cell Operation of }-Based ReRAMs by Jinwoo Noh, Minseok Jo, Chang Yong Kang, Gilmer, David, Kirsch, Paul, Lee, Jack C., Byoung Hun Lee

“…A semiempirical model that can simulate dc and pulse (ac) characteristics of filament-type HfO x -based resistance change random access memory (ReRAM) devices…”
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Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications by Park, Sangsu, Jung, Seungjae, Siddik, Manzar, Jo, Minseok, Park, Jubong, Kim, Seonghyun, Lee, Wootae, Shin, Jungho, Lee, Daeseok, Choi, Godeuni, Woo, Jiyong, Cha, Euijun, Lee, Byoung Hun, Hwang, Hyunsang

“…We propose a selector‐less Pr0.7Ca0.3MnO3 (PCMO) based resistive‐switching RAM (RRAM) for high‐density cross‐point memory array applications. First, we…”
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New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory by PARK, Jubong, JO, Minseok, JUNG, Seungjae, LEE, Joonmyoung, LEE, Wootae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

“…We proposed a new set/reset operation scheme to improve the switching uniformity of filament-type resistive memory. By controlling the magnitude of the sweep…”
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Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament by Park, Jubong, Jo, Minseok, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang

“…We investigated the resistive switching properties of a amorphous carbon-based ReRAM device. In order to minimize the fluctuations of switching parameters, we…”
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New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High- k/IL Gate Dielectric by Sang Kyung Lee, Minseok Jo, Chang-Woo Sohn, Chang Yong Kang, Lee, J. C., Yoon-Ha Jeong, Byoung Hun Lee

“…In this letter, a strategy to minimize the error in lifetime projections using a positive bias temperature instability (PBTI) test has been proposed. Two…”
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Noise-Analysis-Based Model of Filamentary Switching ReRAM With \hbox/\hbox Stacks by Daeseok Lee, Joonmyoung Lee, Minseok Jo, Jubong Park, Siddik, M., Hyunsang Hwang

“…In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer…”
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Effects of channel-length scaling on In2O3 nanowire field effect transistors studied by conducting atomic force microscopy by Jo, Gunho, Maeng, Jongsun, Kim, Tae-Wook, Hong, Woong-Ki, Jo, Minseok, Hwang, Hyunsang, Lee, Takhee

“…Scaling effects of In2O3 nanowire field effect transistors (FETs) were examined as a function of channel length. The channel length was varied from 1μmto20nm…”
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Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High- k pMOSFETs by JO, Minseok, MAN CHANG, KIM, Seonghyun, JUNG, Hyung-Suk, CHOI, Rino, HWANG, Hyunsang

“…Negative bias temperature instability (NBTI) in MOSFETs with high-dielectric-constant ( k ) gate dielectrics has been investigated using a novel pulse NBTI…”
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Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices by Chang, Man, Hasan, Musarrat, Jung, Seungjae, Park, Hokyung, Jo, Minseok, Choi, Hyejung, Hwang, Hyunsang

“…We have investigated the effect of high-pressure deuterium oxide annealing (HPDOA) on metal-alumina-nitride-oxide-silicon-type flash memory device. HPDOA was…”
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Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory by Kwon, Moonjae, Choi, Hyejung, Chang, Man, Jo, Minseok, Jung, Seung-Jae, Hwang, Hyunsang

“…A nonvolatile nanocrystal (NC) memory containing a ferritin core was fabricated. A ferritin monolayer was formed through a droplet evaporation technique…”
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Effect of Fast Components in Threshold-Voltage Shift on Bias Temperature Instability in High- k MOSFETs by Minseok Jo, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Joonmyoung Lee, Hyung-Suk Jung, Choi, R., Hyunsang Hwang

“…The effect of fast components in the threshold-voltage shift (¿V th ) induced by electrical stress on the lifetime of bias temperature instability (BTI) is…”
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