Search Results - "Jo, Jaesung"

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching by Jo, Jaesung, Shin, Changhwan

“…We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS) operation in a p-type bulk metal-oxide-semiconductor field-effect transistor…”
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Effect of Metal Capping Layer in Achieving Record High p-Type SnO Thin Film Transistor Mobility by Mashooq, Kishwar, Jo, Jaesung, Peterson, Rebecca L.

“…Recently p-type tin monoxide (SnO) thin film transistors (TFTs) have drawn significant interest for use in all-oxide CMOS circuits for back-end-of-line (BEOL)…”
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Demonstration and analysis of ambipolar SnO inverter with high gain by Mashooq, Kishwar, Jo, Jaesung, Peterson, Rebecca L.

“…Ambipolar materials offer a unique and simple route toward cost-effective complementary thin film circuits. SnO is one of the few metal oxide semiconductors…”
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Extraction of SnO Subbandgap Defect Density by Numerical Modeling of p-Type TFTs by Mashooq, Kishwar, Jo, Jaesung, Peterson, Rebecca L.

“…Recently, p-type tin monoxide (SnO) thin-film transistors (TFTs) have gained interest for all-oxide complementary metal-oxide semiconductor (CMOS) circuits for…”
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Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices by Jo, Jaesung, Choi, Woo Young, Park, Jung-Dong, Shim, Jae Won, Yu, Hyun-Yong, Shin, Changhwan

“…Because of the “Boltzmann tyranny” (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal–oxide–semiconductor (MOS) devices is…”
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Experimental and theoretical study of hole scattering in RF sputtered p-type Cu2O thin films by Jo, Jaesung, Deng, Zihao, Sanders, Nocona, Kioupakis, Emmanouil, Peterson, Rebecca L.

“…One of the key materials of interest for p-type oxide semiconductor thin film electronics is cuprous oxide (Cu2O), due to its relatively high hole mobility. In…”
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Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors by Jo, Jaesung, Lenef, Julia D., Mashooq, Kishwar, Trejo, Orlando, Dasgupta, Neil P., Peterson, Rebecca L.

“…The high Hall hole mobility (<inline-formula> <tex-math notation="LaTeX">\mu _{Hall} </tex-math></inline-formula>) of cuprous oxide (Cu 2 O) has caused great…”
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Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor by Jo, Jaesung, Kim, Min Gee, Lee, Hyunjae, Choi, Hyunwoo, Shin, Changhwan

“…With lots of interest in negative capacitance field-effect transistors for ultralow-power complementary metal-oxide-semiconductor technology, negative…”
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Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact by Gwang-Sik Kim, Jeong-Kyu Kim, Seung-Hwan Kim, Jaesung Jo, Changhwan Shin, Jin-Hong Park, Saraswat, Krishna C., Hyun-Yong Yu

“…We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO 2-x heavily doped interfacial layer to metal/semiconductor contact to…”
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Discovery-Driven Prototyping for User-Driven Creativity by LIM, Youn-Kyung, KIM, Daesung, JO, Jaesung, WOO, Jong-Bum

“…It has always been challenging for designers and developers to readily pinpoint potentially viable opportunities for emerging technologies in people's daily…”
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Experimental observation of voltage amplification using negative capacitance for sub-60mV/decade CMOS devices by Jo, Jaesung, Shin, Changhwan

“…In this study, an experimental study of negative capacitance is performed in order to overcome the physical limit of subthreshold slope (SS), SS ≥ 60mV/decade…”
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Investigation of p-Type Oxide Semiconductor Thin Film Transistors for Complementary Metal Oxide Semiconductor Technologies by Jo, Jaesung

“…Today we are living through the fourth industrial revolution with new innovative technologies such as artificial intelligence, internet of things, autonomous…”
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Experimental observation of voltage amplification using negative capacitance for sub-60 mV/decade CMOS devices by Jo, Jaesung, Shin, Changhwan

“…In this study, an experimental study of negative capacitance is performed in order to overcome the physical limit of subthreshold slope (SS), SS ≥ 60 mV/decade…”
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Plasma-Enhanced Atomic Layer Deposition of p‑Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology by Lenef, Julia D, Jo, Jaesung, Trejo, Orlando, Mandia, David J, Peterson, Rebecca L, Dasgupta, Neil P

“…Metal oxide semiconductors are important due to their diverse set of applications in (opto)­electronics including light-emitting diodes, solar cells, and thin…”
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Tunable Sulfur Incorporation into Atomic Layer Deposition Films Using Solution Anion Exchange by Lenef, Julia D., Gayle, Andrew J., Jo, Jaesung, Fuelling, Kalyn M., Yadavalli, Srinivas K., Ortiz-Ortiz, Alondra M., Sun, Kai, Peterson, Rebecca L., Dasgupta, Neil P.

“…Metal sulfide and oxysulfide thin films deposited by atomic layer deposition (ALD) are important functional materials for a range of applications including…”
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Layout engineering to suppress hysteresis of negative capacitance FinFET by Eunah Ko, Jaesung Jo, Changhwan Shin, Bich-Yen Nguyen

“…Negative capacitance (NC), which arises from two energy minima of ferroelectric material, is proposed as one of the solutions for the next generation CMOS…”
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Capacitance matching effects in negative capacitnace field effect transistor by Jaesung Jo, Khan, Asif Islam, Karam Cho, Sangheon Oh, Salahuddin, Sayeef, Changhwan Shin

“…Negative capacitance effects are experimentally observed in p-type bulk MOSFET with PZT ferroelectric capacitor. The average subthreshold slope of 45 mV/decade…”
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Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO 2−x Interfacial Layer to Metal/Ge Contact by Kim, Gwang-Sik, Kim, Jeong-Kyu, Kim, Seung-Hwan, Jo, Jaesung, Shin, Changhwan, Park, Jin-Hong, Saraswat, Krishna C., Yu, Hyun-Yong

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