Search Results - "Jiunn-Jye Luo"

High-temperature operation normal incident 256×256 InAs-GaAs quantum-dot infrared photodetector focal plane array by Shiang-Feng Tang, Shiang-Feng Tang, Cheng-Der Chiang, Cheng-Der Chiang, Ping-Kuo Weng, Ping-Kuo Weng, Yau-Tang Gau, Yau-Tang Gau, Jiunn-Jye Luo, Jiunn-Jye Luo, San-Te Yang, San-Te Yang, Chih-Chang Shih, Chih-Chang Shih, S.-Y. Lin, S.-Y. Lin, Si-Chen Lee, Si-Chen Lee

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Wet Etching Characterization of InSb for Thermal Imaging Applications by Chang, Kow-Ming, Luo, Jiunn-Jye, Chiang, Cheng-Der, Liu, Kou-Chen

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Mesa etching characterization of InSb for high density image array applications by Chang, Kow-Ming, Luo, Jiunn-Jye, Chiang, Chen-Der, Liu, Jacob Kou-Chen

“…The wet etching characteristics of InSb single crystal were investigated for high-density focal plane array applications. Two different chemical systems were…”
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Electrical properties of high-quality stacked CdTe/photo-enhanced native oxide for HgCdTe passivation by SU, Y.-K, LIN, C.-T, HUANG, H.-T, CHANG, S.-J, SUN, T.-P, CHEN, G.-S, LUO, J.-J

“…A novel surface treatment method for obtaining a high-quality CdTe/HgCdTe interface is proposed. By stacking photoenhanced native oxide and CdTe films, we…”
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Strain relaxation properties of InAsyP1−y metamorphic buffer layers for SWIR InGaAs photodetector by Hsieh, Hao-Kai, Chou, Chieh, Lin, Hao-Hsiung, Luo, Jiunn-Jye, Li, Shao-Yi

“…We report on the strain relaxation properties of an InAs 0.43 P 0.57 / In 0.73 Ga 0.27 As/InAs 0.43 P 0.57 triple layer photodetector structure with InAs y P…”
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Ion beam etching for InSb photovoltaic detector applications by Chen, Liang Po, Luo, Jiunn Jye, Liu, Tai Hwa, Yang, Shu Ping, Yen Ming Pang, Yen Ming Pang, Sheng Jenn Yang, Sheng Jenn Yang

“…We first investigate the differences of the InSb mesa etching profiles between ion beam etching and 10:1 lactic:nitric acid chemical etching. The mesa profile…”
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The effects of reverse injection current on high a quality InSb photovoltaic detector by Chen, Liang Po, Luo, Jiunn Jye, Liu, Tai Hwa, Yen Ming Pang, Yen Ming Pang, Sheng Jenn Yang, Sheng Jenn Yang

“…This paper presents the fabrication and characterization of high-quality InSb p+-n photovoltaic detectors. The reverse dark current of the detector at small…”
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High-temperature operation normal incident 256/spl times/256 InAs-GaAs quantum-dot infrared photodetector focal plane array by Shiang-Feng Tang, Cheng-Der Chiang, Ping-Kuo Weng, Yau-Tang Gau, Jiunn-Jye Luo, San-Te Yang, Chih-Chang Shih, Lin, S.-Y., Si-Chen Lee

“…In this letter, a 256/spl times/256 midwavelength infrared focal plane array (FPA) based on 30-period InAs-GaAs quantum-dot infrared photodetectors (QDIPs) is…”
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High-temperature operation normal incident 256256 InAs-GaAs quantum-dot infrared photodetector focal plane array by Tang, Shiang-Feng, Chiang, Cheng-Der, Weng, Ping-Kuo, Gau, Yau-Tang, Luo, Jiunn-Jye, Yang, San-Te, Shih, Chih-Chang, Lin, S-Y, Lee, Si-Chen

“…In this letter, a 256256 midwavelength infrared focal plane array (FPA) based on 30-period InAs-GaAs quantum-dot infrared photodetectors (QDIPs) is fabricated…”
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A new CMOS readout circuit for uncooled bolometric infrared focal plane arrays by Tsung-Hsin Yu, Chung-Yu Wu, Pei-Yen Chen, Fa-Wen Chi, Jiunn-Jye Luo, Cheng Der Chiang, Ya-Tung Cherng

“…By incorporating the basic constant current (CC) configuration with the buffered direct injection (BDI) structure, a new readout circuit called the constant…”
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High temperature stable n-i-n resonant tunneling diode embedded InAs quantum dots in GaAs/Al/sub x/Ga/sub 1-x/As double barriers by Shiang-Feng Tang, Cheng Der Chiang, Jiunn-Jye Luo

“…The quantum dot (QD) resonant tunneling diode (RTD) with Al/sub x/Ga/sub 1-x/As double-barriers has been investigated under operating large temperature ranges…”
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The enhanced Q spiral inductors with MEMS technology for RF applications by Chia-Ying Lee, Yao-Huang Kao, Jiunn-Jye Luo, Kow-Ming Chang

“…The quality (Q) factor and self-resonant frequency (SRF) of the spiral inductor in CMOS IC technologies are limited by both high substrate capacitance and…”
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