Search Results - "Jiong-Ping Lu"

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  1. 1
    The impact of TiN capping layer on NiSi, CoSi2, and CoxNi1-xSi2 FUSI metal gate work function adjustment

    The impact of TiN capping layer on NiSi, CoSi2, and CoxNi1-xSi2 FUSI metal gate work function adjustment by JUN LIU, WEN, Huang-Chun, LU, Jiong-Ping, KWONG, Dim-Lee

    Published in IEEE transactions on electron devices (01-12-2005)
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  2. 2
    Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

    Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films by Lu, Jiong-Ping, Raj, Rishi

    Published in Journal of materials research (01-09-1991)
    “…Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were…”
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  3. 3
    The impact of TiN capping Layer on NiSi, CoSi/sub 2/, and Co/sub x/Ni/sub 1-x/Si/sub 2/ FUSI metal gate work function adjustment

    The impact of TiN capping Layer on NiSi, CoSi/sub 2/, and Co/sub x/Ni/sub 1-x/Si/sub 2/ FUSI metal gate work function adjustment by Liu, Jun, Wen, Huang-Chun, Lu, Jiong-Ping, Kwong, Dim-Lee

    Published in IEEE transactions on electron devices (01-12-2005)
    “…The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN…”
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  4. 4
    Characterization of reactions at titanium/nickel silicide interface using X-ray photoelectron spectroscopy and transmission electron microscopy

    Characterization of reactions at titanium/nickel silicide interface using X-ray photoelectron spectroscopy and transmission electron microscopy by Zhao, Jin, Lu, Jiong-Ping, Xu, Yu-Qing, Kuan, Yu-Ji R, Tsung, Lancy

    Published in Applied surface science (30-04-2003)
    “…TiN/Ti/NiSi/Si multilayer system is of great technological importance for complementary metal-oxide-semiconductor (CMOS) device fabrication. Interfacial…”
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  5. 5
    Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallization

    Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallization by Chen, Yu-Pei, Dixit, Girish A, Lu, Jiong-Ping, Hsu, Wei-Yung, Konecni, Anthony J, Luttmer, J.D, Havemann, Robert H

    Published in Thin solid films (04-05-1998)
    “…New contact fill integration schemes were developed for high aspect ratio Gb DRAM contact metallization. Integration schemes for both tungsten-plug contacts…”
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    Journal Article Conference Proceeding
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  6. 6
    Millisecond anneal for ultra-shallow junction applications

    Millisecond anneal for ultra-shallow junction applications by Jiong-Ping Lu, Yonggen He, Yong Chen

    “…As CMOS devices are scaled down, dopant activation, junction profile control and silicide engineering become increasingly important. To address these…”
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  7. 7
    Investigation of Ni-based silicide formation by different dynamic surface annealing approaches

    Investigation of Ni-based silicide formation by different dynamic surface annealing approaches by Yonggen He, Bing Wu, Guobin Yu, Jin Lin, Zhang, S, Jiong-Ping Lu, Jingang Wu, JiYue Tang, Ganming Zhao

    “…Sub-melt millisecond anneal (MSA) is one of major anneal techniques for forming ultra-shallow and highly activated junctions. Besides post-implant anneal for…”
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  8. 8
    Laser spike anneal macro & micro non-uniformity investigation using modulated optical reflectance and four-point-probe

    Laser spike anneal macro & micro non-uniformity investigation using modulated optical reflectance and four-point-probe by Yonggen He, Yong Chen, Guobin Yu, Hong, Albert, Jiong-Ping Lu, Xianghua Liu, Lu Yu, Yue Chen

    “…Laser spike anneal (LSA) is one of major millisecond anneal techniques for forming ultra-shallow and highly activated junctions. With its ultra-fast heating…”
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  9. 9
    The impact of TiN capping Layer on NiSi, CoSi(2), and Co(x)Ni(1-x)Si(2) FUSI metal gate work function adjustment

    The impact of TiN capping Layer on NiSi, CoSi(2), and Co(x)Ni(1-x)Si(2) FUSI metal gate work function adjustment by Liu, Jun, Wen, Huang-Chun, Lu, Jiong-Ping, Kwong, Dim-Lee

    Published in IEEE transactions on electron devices (01-12-2005)
    “…The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN…”
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  10. 10
    The impact of TiN capping Layer on NiSi, CoSi sub(2), and Co sub(x)Ni sub(1-x)Si sub( 2) FUSI metal gate work function adjustment

    The impact of TiN capping Layer on NiSi, CoSi sub(2), and Co sub(x)Ni sub(1-x)Si sub( 2) FUSI metal gate work function adjustment by Liu, Jun, Wen, Huang-Chun, Lu, Jiong-Ping, Kwong, Dim-Lee

    Published in IEEE transactions on electron devices (01-01-2005)
    “…The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN…”
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  11. 11
    Effects of postdosed species on preadsorbed CO on Fe(100) : adsorption site conversion caused by site competition

    Effects of postdosed species on preadsorbed CO on Fe(100) : adsorption site conversion caused by site competition by JIONG-PING LU, ALBERT, M. R, BERNASEK, S. L

    Published in Journal of physical chemistry (1952) (26-07-1990)
    “…Carbon monoxide (CO) adsorption on the clean Fe(100) surface and the c(2{times}2)CO-Fe(100) surface has been studied. The effects of postdosed oxygen(O{sub 2})…”
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  12. 12
    Adsorption and reaction of carbon monoxide and methanol on the iron(100) surface

    Adsorption and reaction of carbon monoxide and methanol on the iron(100) surface by Lu, Jiong-Ping

    Published 01-01-1989
    “…Adsorption and reaction of carbon monoxide (CO) and methanol (CH$\sb3$OH) on the Fe(100) surface has been studied, under ultra-high vacuum (UHV) conditions. An…”
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  13. 13
    Effects of postdosed species on preadsorbed carbon monoxide on iron (100): adsorption site conversion caused by site competition

    Effects of postdosed species on preadsorbed carbon monoxide on iron (100): adsorption site conversion caused by site competition by Lu, Jiong Ping, Albert, M. R, Bernasek, S. L

    Published in Journal of physical chemistry (1952) (01-07-1990)
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  14. 14
    Surface Reactions of Tris(oimethylamino) Arsine During Mombe of Gaas

    Surface Reactions of Tris(oimethylamino) Arsine During Mombe of Gaas by Jiong Ping Lu, Salim, S., Jensen, K.F., Bohling, D.A.

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