Effect of High BZO Dopant Levels on Performance of 2G-HTS MOCVD Wire at Intermediate and Low Temperatures

Flux pinning in REBCO (rare-earth Ba-Cu-O) by self-assembly of BZO (barium zirconate) nanorods has emerged as one of the most prominent techniques for improving the in-field performance of 2G-HTS wire in terms of I c and angular I c anisotropy. In our previous study on metalorganic chemical vapor de...

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Bibliographic Details
Published in:	IEEE transactions on applied superconductivity Vol. 23; no. 3; p. 6602605
Main Authors:	Majkic, G., Yao Yao, Jinfgu Liu, Yuhao Liu, Khatri, N. D., Tuo Shi, Yimin Chen, Galstyan, E., Changhui Lei, Selvamanickam, V.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	New York, NY IEEE 01-06-2013 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Anisotropy Applied sciences Barium zirconates CHEMICAL VAPOR DEPOSITION Conductors COPPER OXIDE Diffraction Dopants DOPING Electronics Exact sciences and technology FLUX PINNING High temperature superconductors Integrated circuits Microelectronic fabrication (materials and surfaces technology) Mineralogy Nanorods Pinning Rare earth metals Self assembly Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Transmission electron microscopy WIRE X-ray diffraction Zirconium Performance evaluation Self assembly high temperature superconductors Doping X-ray diffraction X ray diffraction Chemical vapor deposition MOCVD Degradation Microelectronic fabrication Flux pinning Transmission electron microscopy Anisotropy Microstructure Nanorod High temperature superconductor Low temperature Damaging
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Summary:	Flux pinning in REBCO (rare-earth Ba-Cu-O) by self-assembly of BZO (barium zirconate) nanorods has emerged as one of the most prominent techniques for improving the in-field performance of 2G-HTS wire in terms of I c and angular I c anisotropy. In our previous study on metalorganic chemical vapor deposition REBCO wire, an optimum performance was found for 7.5% Zr at 1 T, 77 K, while further increase in Zr content resulted in I c and T c degradation. However, recent results indicate that the pinning performance at high Zr content actually surpasses that of the 7.5% Zr wire at intermediate and low temperatures. In-depth understanding of the effect of high Zr levels on REBCO provides a strong potential for further substantial increase in pinning performance at high Zr content if the unwanted effects can be minimized by process modification. In this study, we analyze the effect of high Zr doping levels on REBCO properties with emphasis on microstructure analysis. Structural properties as a function of BZO dopant level have been analyzed using X-ray reciprocal space maps and transmission electron microscopy, while the performance has been characterized using angular in-field I c characterization up to 9T at temperatures of 20-77 K.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	1051-8223 1558-2515
DOI:	10.1109/TASC.2012.2236675