Search Results - "Jin, Junshan"
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Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects
Published in Sensors (Basel, Switzerland) (30-11-2017)“…Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated…”
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Theoretical and experimental study of the dark signal in CMOS image sensors affected by neutron radiation from a nuclear reactor
Published in AIP advances (01-12-2017)“…The CMOS image sensors (CISs) are irradiated with neutron from a nuclear reactor. The dark signal in CISs affected by neutron radiation is studied…”
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Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods
Published in Science China. Information sciences (01-12-2017)“…Recently,complementary metal-oxide semiconductor image sensors(CISs)have become a key element of the imaging instrument and have been widely used in many…”
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Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs
Published in AIP advances (01-09-2014)“…The experiments of reactor neutron irradiation which induce dark signal increase in COTS array CCDs are presented. The flux of the reactor neutron beams was…”
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Simulation and measurement of total ionizing dose radiation induced image lag increase in pinned photodiode CMOS image sensors
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-06-2017)“…This paper presents an investigation of total ionizing dose (TID) induced image lag sources in pinned photodiodes (PPD) CMOS image sensors based on radiation…”
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Transient Response in PPD CMOS Image Sensors Irradiated by Gamma Rays: Variation of Dose Rates and Integration Times
Published in IEEE transactions on nuclear science (01-06-2019)“…The transient responses in CMOS image sensors (CISs) during radiation are one of the most important key issues to the detector design, reliability, and…”
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Measurement and investigation of proton irradiation-induced charge transfer inefficiency in PPD CIS at different integration times
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-04-2018)“…Charge transfer inefficiency (CTI) is an important parameter for photodiode (PPD) CMOS image sensors (CISs). A test system was built and used to measure the…”
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Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method
Published in Science China. Information sciences (01-06-2018)“…The dark signal degradation of the CMOS image sensor (CIS) was induced by neutron radiation, and it was modeled by Geant4, which is a three-dimensional Monte…”
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