Search Results - "Jin, Eric N."

Band Alignment of ScxAl1-xN/GaN Heterojunctions by Jin, Eric N, Hardy, Matthew T, Mock, Alyssa L, Lyons, John L, Kramer, Alan R, Tadjer, Marko J, Nepal, Neeraj, Katzer, D Scott, Meyer, David J

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Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications by Katzer, D. Scott, Nepal, Neeraj, Hardy, Matthew T., Downey, Brian P., Storm, David F., Jin, Eric N., Yan, Rusen, Khalsa, Guru, Wright, John, Lang, Andrew C., Growden, Tyler A., Gokhale, Vikrant, Wheeler, Virginia D., Kramer, Alan R., Yater, Joan E., Xing, Huili Grace, Jena, Debdeep, Meyer, David J.

“…Epitaxial integration of superconductors with semiconductors is expected to enable new device architectures and to increase electronic circuit and system…”
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Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry by Mock, Alyssa L., Jacobs, Alan G., Jin, Eric N., Hardy, Matthew T., Tadjer, Marko J.

“…Tuning the optical, electronic, and long-wavelength properties of group-III nitride alloys can be achieved by alloying AlN with ScN. We report here on the…”
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Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures by Jin, Eric N., Downey, Brian P., Gokhale, Vikrant J., Roussos, Jason A., Hardy, Matthew T., Growden, Tyler A., Nepal, Neeraj, Katzer, D. Scott, Calame, Jeffrey P., Meyer, David J.

“…Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and…”
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Transport at the Epitaxial Interface between Germanium and Functional Oxides by Kornblum, Lior, Morales‐Acosta, Mayra D., Jin, Eric N., Ahn, Charles H., Walker, Frederick J.

“…Combining functional oxides with conventional semiconductors provides the potential for transformational advancement of microelectronic devices. Harnessing the…”
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Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices by Gokhale, Vikrant J., Downey, Brian P., Hardy, Matthew T., Jin, Eric N., Roussos, Jason A., Meyer, David J.

“…This report presents some of the first experimental characterization of surface acoustic wave (SAW) devices using single-crystal ScAlN epitaxially grown on…”
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Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy Sc x Al1− x N determined by infrared spectroscopic ellipsometry by Mock, Alyssa L., Jacobs, Alan G., Jin, Eric N., Hardy, Matthew T., Tadjer, Marko J.

“…Tuning the optical, electronic, and long-wavelength properties of group-III nitride alloys can be achieved by alloying AlN with ScN. We report here on the…”
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Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy by Nepal, Neeraj, Katzer, D. Scott, Downey, Brian P., Wheeler, Virginia D., Nyakiti, Luke O., Storm, David F., Hardy, Matthew T., Freitas, Jaime A., Jin, Eric N., Vaca, Diego, Yates, Luke, Graham, Samuel, Kumar, Satish, Meyer, David J.

“…β-Ga2O3 is a promising ultrawide bandgap semiconductor for next generation radio frequency electronics. However, its low thermal conductivity and inherent…”
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Band Alignment of Sc x Al 1– x N/GaN Heterojunctions by Jin, Eric N., Hardy, Matthew T., Mock, Alyssa L., Lyons, John L., Kramer, Alan R., Tadjer, Marko J., Nepal, Neeraj, Katzer, D. Scott, Meyer, David J.

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Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications by Katzer, D. Scott, Nepal, Neeraj, Hardy, Matthew T., Downey, Brian P., Storm, David F., Jin, Eric N., Yan, Rusen, Khalsa, Guru, Wright, John, Lang, Andrew C., Growden, Tyler A., Gokhale, Vikrant, Wheeler, Virginia D., Kramer, Alan R., Yater, Joan E., Xing, Huili Grace, Jena, Debdeep, Meyer, David J.

“…Superconductors Integration of superconductors with semiconductors is required for high‐performance electron devices in new quantum, sensing, and systems…”
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Oxide 2D electron gases as a route for high carrier densities on (001) Si by Kornblum, Lior, Jin, Eric N., Kumah, Divine P., Ernst, Alexis T., Broadbridge, Christine C., Ahn, Charles H., Walker, Fred J.

“…Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and…”
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Band Alignment of Sc x Al1–x N/GaN Heterojunctions by Jin, Eric N, Hardy, Matthew T, Mock, Alyssa L, Lyons, John L, Kramer, Alan R, Tadjer, Marko J, Nepal, Neeraj, Katzer, D. Scott, Meyer, David J

“…ScAlN is an emergent ultrawide-band-gap material with both a high piezoresponse and demonstrated ferroelectric polarization switching. Recent demonstration of…”
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Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications by Katzer, D Scott, Nepal, Neeraj, Hardy, Matthew T., Downey, Brian P., Storm, David F., Jin, Eric N., Meyer, David J., Yan, Rusen, Khalsa, Guru, Wright, John, Xing, Huili, Jena, Debdeep

“…Integration of epitaxial superconducting layers with semiconductor devices is expected to enable substantial performance benefits, design flexibility, and…”
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Oxide 2D electron gases as a route for high carrier densities on (001) Si by Kornblum, Lior, Jin, Eric N, Kumah, Divine P, Ernst, Alexis T, Broadbridge, Christine C, Ahn, Charles H, Walker, Fred J

“…Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and…”
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