Search Results - "Jiebin Niu"
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Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
Published in ACS nano (26-10-2010)“…Resistive memory (ReRAM) based on a solid-electrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory, analog…”
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Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer
Published in Small (Weinheim an der Bergstrasse, Germany) (01-09-2017)“…Conductive‐bridge random access memory (CBRAM) is considered a strong contender of the next‐generation nonvolatile memory technology. Resistive switching (RS)…”
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Dual-band, polarization-insensitive metamaterial perfect absorber based on monolayer graphene in the mid-infrared range
Published in Results in physics (01-06-2019)“…A dual-band, polarization-insensitive metamaterial perfect absorber based on monolayer graphene in the mid-infrared range is designed. The calculations prove…”
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4
A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers
Published in Nature communications (04-01-2021)“…Organic conjugated polymers demonstrate great potential in transistors, solar cells and light-emitting diodes, whose performances are fundamentally governed by…”
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5
Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals
Published in Nature communications (31-01-2020)“…In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge…”
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Chemical ordering suppresses large-scale electronic phase separation in doped manganites
Published in Nature communications (07-04-2016)“…For strongly correlated oxides, it has been a long-standing issue regarding the role of the chemical ordering of the dopants on the physical properties. Here,…”
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Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching
Published in Micromachines (Basel) (10-01-2023)“…Silicon structures with ultra-high aspect ratios have great potential applications in the fields of optoelectronics and biomedicine. However, the slope and…”
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Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites
Published in Physical review letters (28-06-2018)“…At ultrafast timescales, the initial and final states of a first-order metal-insulator transition often coexist forming clusters of the two phases. Here, we…”
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Ultra-Broadband High-Efficiency Solar Absorber Based on Double-Size Cross-Shaped Refractory Metals
Published in Nanomaterials (Basel, Switzerland) (19-03-2020)“…In this paper, a theoretical simulation based on a finite-difference time-domain method (FDTD) shows that the solar absorber can reach ultra-broadband and…”
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Preparation of TiO2 nanotube arrays with efficient photocatalytic performance and super-hydrophilic properties utilizing anodized voltage method
Published in Results in physics (01-09-2019)“…In this paper, TiO2 nanotube arrays were prepared by anodic oxidation method. The effects of anodization voltage, sample annealing on the morphology and…”
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High-efficiency V-shaped phase gratings to suppress high order diffractions
Published in AIP advances (01-01-2019)“…We propose a V-shaped phase grating to simultaneously improve the diffraction efficiency of the 1st order diffraction mode and suppression of high order modes…”
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Large‐Scale Ultrathin Channel Nanosheet‐Stacked CFET Based on CVD 1L MoS2/WSe2
Published in Advanced electronic materials (01-02-2023)“…Nanosheet (NS) vertical‐stacked complementary field‐effect transistors (CFETs), where the NS n‐FET and NS p‐FET are vertically stacked and controlled using a…”
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Controllable p‐to‐n Type Conductance Transition in Top‐Gated Graphene Field Effect Transistor by Interface Trap Engineering
Published in Advanced electronic materials (01-09-2020)“…Modulating the electronic property of graphene by doping is essential for its device and circuit applications. Unfortunately, controllable p‐ and n‐type doping…”
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Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping
Published in Advanced electronic materials (01-03-2024)Get full text
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15
High carrier mobility in suspended-channel graphene field effect transistors
Published in Applied physics letters (04-11-2013)“…A channel suspension method to fabricate high performance graphene field effect transistors (GFET) is presented in this paper. The balance is reached between…”
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16
Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM Devices
Published in IEEE electron device letters (01-06-2011)“…Resistance random access memory devices based on nanoscale diamondlike carbon (DLC) films are demonstrated. The devices exhibit excellent memory performances…”
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Surface Improvement of InAlAs/InGaAs InP-Based HEMT Through Treatments of UV/Ozone and TMAH
Published in IEEE journal of the Electron Devices Society (2020)“…In this paper, we introduce novel surface treatments of UV/Ozone and TMAH to solve the surface problem of gate recess of InAlAs/InGaAs InP-based HEMTs. The…”
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18
Polarization-Sensitive Structural Colors Based on Anisotropic Silicon Metasurfaces
Published in Photonics (01-04-2023)“…Structural colors based on all-dielectric metasurfaces hold great promise for a wide range of applications, including high-density optical storage,…”
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Overcoming the Dilemma Between RESET Current and Data Retention of RRAM by Lateral Dissolution of Conducting Filament
Published in IEEE electron device letters (01-07-2013)“…Resistive switching memory with low switching current is critical for low-power application. In this letter, we successfully demonstrated a four-terminal…”
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Metal‐Contact‐Induced Transition of Electrical Transport in Monolayer MoS2: From Thermally Activated to Variable‐Range Hopping
Published in Advanced electronic materials (01-07-2019)“…An understanding of the charge transport of atomically thin molybdenum sulfide (MoS2) beneath the metal electrode is important to the fabrication of high…”
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