Search Results - "Jie-Wei Lai"
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Design of variable gain amplifier with gain-bandwidth product up to 354 GHz implemented in InP-InGaAs DHBT technology
Published in IEEE transactions on microwave theory and techniques (01-02-2006)“…A high-gain and wide-band variable gain amplifier (VGA) is developed using 300-GHz InP-InGaAs double-heterojunction bipolar transistor (DHBT). Negative-R/sub…”
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Journal Article -
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Hydroxyethyl cellulose-grafted loofa sponge-based metal affinity adsorbents for protein purification and enzyme immobilization
Published in Process biochemistry (1991) (01-11-2018)“…[Display omitted] •Loofa sponge-based IMAC adsorbents for protein purification was prepared.•Grafting of hydroxyl ethylcellulose (HEC) increased the capacity…”
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Journal Article -
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A World-Band Triple-Mode 802.11a/b/g SOC in 130-nm CMOS
Published in IEEE journal of solid-state circuits (01-11-2009)“…A fully integrated system-on-a-chip (SOC) in 130-nm CMOS technology compliant with world-band 802.11a/b/g is presented. This SOC integrates all blocks…”
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Journal Article Conference Proceeding -
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A Fully Integrated 16-Element Phased-Array Transmitter in SiGe BiCMOS for 60-GHz Communications
Published in IEEE journal of solid-state circuits (01-12-2010)“…A phased-array transmitter (TX) for multi-Gb/s non-line-of-sight links in the four frequency channels of the IEEE 802.15.3c standard (58.32 to 64.8 GHz) is…”
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Journal Article Conference Proceeding -
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A 1V 17.9dBm 60GHz power amplifier in standard 65nm CMOS
Published in 2010 IEEE International Solid-State Circuits Conference - (ISSCC) (01-02-2010)“…A CMOS PA integrating a power detector for all IEEE 802.15.3c bands is demonstrated. A fully synchronous power combiner removes design trade-offs between…”
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Conference Proceeding
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Submicron InP-InGaAs single heterojunction bipolar transistors with fT of 377 GHz
Published in IEEE electron device letters (01-05-2003)“…Submicron InP-InGaAs-based single heterojunction bipolar transistors (SHBTs) are fabricated to achieve record-breaking speed performance using an aggressively…”
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Journal Article -
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Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA
Published in IEEE electron device letters (01-07-2003)“…Scaling of submicron InP-InGaAs HBTs is investigated for low-power high-speed applications in mixed signal circuits. Device performance for transistors…”
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Journal Article -
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A SiGe BiCMOS 16-element phased-array transmitter for 60GHz communications
Published in 2010 IEEE International Solid-State Circuits Conference - (ISSCC) (01-02-2010)“…A 60 GHz phased-array transmitter for multi-Gb/s non-line-of-sight links is fully integrated in a 0.12 ¿m SiGe BiCMOS process. It consists of an up-conversion…”
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Conference Proceeding -
9
Carrier diffusion effect in tapered semiconductor-laser amplifier
Published in IEEE journal of quantum electronics (01-07-1998)“…This paper proposes a theoretical model to study the beam amplification and the influence of the lateral drift and diffusion on the tapered semiconductor-laser…”
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Journal Article -
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Opportunity and Challenge of Chiplet-Based HPC and AIoT
Published in 2021 International Symposium on VLSI Design, Automation and Test (VLSI-DAT) (19-04-2021)“…High-performance computing and AI tremendously drive technology innovations on architecture, algorithm, memory, and semiconductor design, and continuously…”
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Conference Proceeding -
11
Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz
Published in IEEE electron device letters (01-07-2003)“…Vertical scaling of the epitaxial structure has allowed submicron InP/InGaAs-based single heterojunction bipolar transistors (SHBTs) to achieve record…”
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Journal Article -
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A 4-in-1 (WiFi/BT/FM/GPS) connectivity SoC with enhanced co-existence performance in 65nm CMOS
Published in 2012 IEEE International Solid-State Circuits Conference (01-02-2012)“…In recent years, the increasing popularity of mobile devices, such as smart- phones and tablets, is driving the demand for integrating multiple radios on a…”
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Conference Proceeding -
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A visualization tool for observing metaheuristic algorithm: Epanel
Published in 2017 IEEE International Conference on Systems, Man, and Cybernetics (SMC) (01-10-2017)“…Metaheuristic algorithms are important methods to solve many complicated optimization problems. However, there are no significant studies that present an…”
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Conference Proceeding -
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Over 500 GHz InP heterojunction bipolar transistors
Published in 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004 (2004)“…Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520 GHz operating at current densities over 1400 kA/cm/sup 2/ have been…”
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Conference Proceeding -
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Knowledge as a Predictor for Preparedness in Managing COVID-19 Among General Practitioners in Malaysia
Published in Curēus (Palo Alto, CA) (25-06-2024)“…Introduction The COVID-19 pandemic has changed the working environment for general practitioners (GPs). GPs had to adapt quickly when care mitigation for mild…”
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Journal Article -
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An initial edge point selection and segmental contour following for object contour extraction
Published in 2010 11th International Conference on Control Automation Robotics & Vision (01-12-2010)“…Image segmentation is a technique used to segment region of interest (ROI) in the image for further image processing applications. Contour extraction is one of…”
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Conference Proceeding -
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Single-element and phased-array transceiver chipsets for 60-ghz Gb/s communications
Published in IEEE communications magazine (01-04-2011)“…This article summarizes the development of mature and highly integrated SiGe BiCMOS ICs for gigabit-per-second communications according to the requirements of…”
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Magazine Article -
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A world-band triple-mode 802.11a/b/g SOC in 0.13um CMOS
Published in 2008 IEEE Asian Solid-State Circuits Conference (01-11-2008)“…A world-band triple-mode SOC compliant with 802.11a/b/g is realized in 0.13 mum CMOS technology. This SOC features multiple integrated capless LDOs to be…”
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Conference Proceeding -
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Vertical scaling of 0.25-[micro]m emitter InP/InGaAs single heterojunction bipolar transistors with fT of 452 GHz
Published in IEEE electron device letters (01-07-2003)Get full text
Journal Article