Search Results - "Jia-Min Shieh"
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Hybrid Cd-free CIGS solar cell/TEG device with ZnO nanowires
Published in Progress in photovoltaics (01-04-2015)“…A green energy device with a CuInGaSe2 (CIGS) photovoltaic (PV) cell covered with a passive light‐trapping structure (ZnO nanowires (NWs)) and connected to an…”
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Integrated metasurfaces on silicon photonics for emission shaping and holographic projection
Published in Nanophotonics (Berlin, Germany) (01-12-2022)“…The emerging applications of silicon photonics in free space, such as LiDARs, free-space optical communications, and quantum photonics, urge versatile emission…”
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Strength, stiffness, and microstructure of Cu(In,Ga)Se2 thin films deposited via sputtering and co-evaporation
Published in Applied physics letters (07-07-2014)“…This work examines Cu(In,Ga)Se2 thin films fabricated by (1) selenization of pre-sputtered Cu-In-Ga and (2) co-evaporation of each constituent. The efficiency…”
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4
Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching
Published in IEEE transactions on electron devices (01-12-2021)“…A back-end-of-line compatible 400 °C thermally robust perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) memory cell with a tunnel…”
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Single-Crystal Islands (SCI) for Monolithic 3-D and Back-End-of-Line FinFET Circuits
Published in IEEE transactions on electron devices (01-10-2021)“…A single-crystal islands (SCI) technique using low thermal budget pulse laser process is proposed and demonstrated to fabricate single-crystal silicon islands…”
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Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process
Published in IEEE electron device letters (01-10-2022)“…Back-end-of-line compatible 400°C thermally robust perpendicular spin-orbit torque (p-SOT) cells with reduced MgO short fails are demonstrated by the…”
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Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting
Published in Scientific reports (05-10-2017)“…A p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC:H…”
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Roll-to-roll fabrication of large scale and regular arrays of three-dimensional nanospikes for high efficiency and flexible photovoltaics
Published in Scientific reports (07-03-2014)“…Three-dimensional (3-D) nanostructures have demonstrated enticing potency to boost performance of photovoltaic devices primarily owning to the improved photon…”
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9
Impacts of Electrical Field in Tunneling Layer on Operation Characteristics of Poly-Ge Charge-Trapping Flash Memory Device
Published in IEEE electron device letters (01-12-2020)“…Operation characteristics of polycrystalline germanium (poly-Ge) tri-gate junctionless (JL) charge-trapping (CT) flash memory devices with stacked tunneling…”
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Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate
Published in Advanced electronic materials (01-12-2023)“…A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices…”
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Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs
Published in Japanese Journal of Applied Physics (01-04-2024)“…In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique designed for the precise fabrication of single-crystal islands…”
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Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure
Published in IEEE transactions on nanotechnology (2021)“…In this paper, we report a 1.84 kV GaN-on-GaN Schottky barrier diode (SBD) corresponds to a low on-resistance of 1.98 mΩ-cm 2 . The GaN epi-layer was etched to…”
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Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization
Published in IEEE electron device letters (01-02-2021)“…This letter reports the fabrication of polycrystalline silicon (poly-Si) tunneling field effect transistors (Tunneling FETs) using green nanosecond laser…”
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14
High-Performance Recessed-Channel Germanium Thin-Film Transistors via Excimer Laser Crystallization
Published in IEEE electron device letters (01-03-2018)“…This letter demonstrates the excimer laser crystallization (ELC) of germanium (Ge) thin films with the recessed-channel (RC) structure for high-performance…”
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15
Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes
Published in Applied physics letters (02-11-2015)“…We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor…”
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P-type conductive Ga2O3 epilayers grown on sapphire substrate by phosphorus-ion implantation technology
Published in Materials today advances (01-12-2023)“…This study utilized various phosphorus-ion implantation techniques, incorporating low, medium, and high doses, to investigate the electrical properties of…”
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Non-Drude Behavior in Indium-Tin-Oxide Nanowhiskers and Thin Films Investigated by Transmission and Reflection THz Time-Domain Spectroscopy
Published in IEEE journal of quantum electronics (01-08-2013)“…A comparative study of indium-tin-oxide (ITO) nanowhiskers (NWhs) and thin films as transparent conductors in the terahertz frequency range are conducted. We…”
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High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization
Published in IEEE electron device letters (01-12-2018)“…This letter reports of the fabrication of high-performance p-channel polycrystalline germanium (poly-Ge) thin-film transistors (TFTs) using continuous-wave…”
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Frequency-Dependent Complex Conductivities and Dielectric Responses of Indium Tin Oxide Thin Films From the Visible to the Far-Infrared
Published in IEEE journal of quantum electronics (01-12-2010)“…Transparent and conducting indium tin oxide (ITO) thin films form an integral part for various optoelectronic devices. In this paper, we report the…”
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Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes
Published in Applied physics letters (13-06-2016)“…A doping-free poly-Ge film as channel material was implemented by CVD-deposited nano-crystalline Ge and visible-light laser crystallization, which behaves as a…”
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