Search Results - "Jia, Tongxuan"

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation by Jia, Tongxuan, Wang, Zujun, Tang, Minghua, Xue, Yuanyuan, Huang, Gang, Nie, Xu, Lai, Shankun, Ma, Wuying, He, Baoping, Gou, Shilong

“…Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures…”
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Radiation effects in GaInP/GaAs/Ge triple junction solar cells irradiated by 1 MeV and 10 MeV electrons by Wang, Zujun, Xue, Yuanyuan, Yang, Xie, Cui, Xinyu, Jia, Tongxuan, Jiao, Qianli, Nie, Xu, Lai, Shankun

“…The experiments of the GaInP/GaAs/Ge triple junction solar cells (3JSCs) irradiated by 1MeV and 10 MeV electrons at the electron accelerator facility were…”
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Charge transfer inefficiency increase of the CCD detector induced by proton and neutron irradiations by Wang, Zujun, Xue, Yuanyuan, Xu, Rui, Ning, Hao, Jiao, Qianli, Li, Junwei, Ding, Lili, Jia, Tongxuan

“…Charge transfer inefficiency (CTI) is one of the most important parameters to evaluate the performance of a CCD detector caused by displacement damages. In…”
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Analysis of CSNS neutron-induced displacement damage effects on top illumination planar InGaAs p-i-n photodetectors by Xue, Yuanyuan, Wang, Zujun, Ning, Hao, Xu, Rui, Jiao, Qianli, Li, Junwei, Jia, Tongxuan

“…The displacement damage effects on indium gallium arsenide (InGaAs) p-i-n photodetectors induced by neutron at China Spallation Neutron Source (CSNS) are…”
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The influence of temperature and energy on defect evolution and clustering during cascade in GaAs by Jia, Tongxuan, Wang, Zujun, Xue, Yuanyuan, Jiao, Qianli, Yang, Xie, Nie, Xu, Lai, Shankun, Ma, Wuying, He, Baoping, Liu, Minbo

“…Molecular dynamics (MD) is used to simulate cascade collision in gallium arsenide (GaAs) under different temperatures (300–900 K). During the entire…”
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Numerical simulation of the primary displacement damage in GaAs1−xNx with low nitrogen atomic content by Jia, Tongxuan, Wang, Zujun, Xue, Yuanyuan, Jiao, Qianli, Yang, Xie, Nie, Xu, Lai, Shankun, Ma, Wuying, He, Baoping, Liu, Minbo

“…[Display omitted] Molecular dynamics (MD) simulation is conducted to investigate the primary displacement damage of GaAs1−xNx as a function of nitrogen atoms…”
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Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS by Wang, Zujun, Xue, Yuanyuan, Chen, Wei, Guo, Xiaoqiang, Yang, Xie, Jia, Tongxuan, Nie, Xu, Lai, Shankun, Huang, Gang, Yao, Zhibin, He, Baoping, Sheng, Jiangkun, Ma, Wuying, Dong, Guantao

“…We present experiments with BSI-CISs (backside-illuminated CMOS image sensors) conducted at the WNS (white neutron source) at CSNS (China spallation neutron…”
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Numerical simulation of the primary displacement damage in GaAs1−N with low nitrogen atomic content by Jia, Tongxuan, Wang, Zujun, Xue, Yuanyuan, Jiao, Qianli, Yang, Xie, Nie, Xu, Lai, Shankun, Ma, Wuying, He, Baoping, Liu, Minbo

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Theoretical simulation of the degradation on GaAs sub-cell with different defects induced by 1MeV electron irradiation by Li, Junwei, Wang, Zujun, Xue, Yuanyuan, Shi, Chengying, Ning, Hao, Xu, Rui, Jiao, Qianli, Jia, Tongxuan

“…The degradation on the GaAs sub-cell of GaInP/GaAs/Ge triple-junction solar cells caused by different types of defects induced by 1 MeV electron irradiation is…”
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