Search Results - "Ji, Fengwei"

Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector by Tang, Xi, Ji, Fengwei, Wang, Huan, Jin, Zijing, Li, Hui, Li, Baikui, Wang, Jiannong

“…An AlGaN/GaN metal-heterostructure-metal (MHM) ultraviolet (UV) photodetector employing lateral Schottky contacts was fabricated and characterized at different…”
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Investigation of conductivity modulation in vertical GaN-on-GaN PiN diode under high current density by Li, Yanjun, Yang, Shu, Ji, Fengwei, Tang, Xi, Sheng, Kuang

“…This work studies the conductivity modulation in the vertical GaN-on-GaN PiN diode (PND) under high current density and its impact on surge current capability…”
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Investigation of conductivity modulation in vertical GaN-on-GaN PiN diodeunder high current density by Li, Yanjun, Yang, Shu, Ji Fengwei, Tang, Xi, Kuang, Sheng

“…This work studies the conductivity modulation in the vertical GaN-on-GaN PiN diode (PND)under high current density and its impact on surge current capability…”
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Band-structure tailoring and surface passivation for highly efficient near-infrared responsive PbS quantum dot photovoltaics by Zhou, Ru, Niu, Haihong, Ji, Fengwei, Wan, Lei, Mao, Xiaoli, Guo, Huier, Xu, Jinzhang, Cao, Guozhong

“…PbS is a promising light harvester for near-infrared (NIR) responsive quantum dot (QD) photovoltaics due to its narrow bulk band gap (0.41 eV) and large…”
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Hierarchical SnO2 hollow sub-microspheres for panchromatic PbS quantum dot-sensitized solar cells by Pan, Shuhao, Zhou, Ru, Niu, Haihong, Wan, Lei, Huang, Bin, Huang, Yuanzhang, Ji, Fengwei, Xu, Jinzhang

“…In contrast with the commonly used TiO2 or ZnO electron transporters, SnO2, which possesses relatively low conduction band and high electron-mobility, is…”
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Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis by Wang, Huan, Liu, Yuhan, Ji, Fengwei, Li, Hui, Li, Baikui, Tang, Xi

“…A normally-off p-GaN/AlGaN/GaN high-electron-mobility transistor (p-GaN HEMTs) with a semitransparent gate electrode was investigated. Under forward gate bias,…”
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Constructing aligned single-crystalline TiO2 nanorod array photoelectrode for PbS quantum dot-sensitized solar cell with high fill factor by Zhou, Ru, Huang, Yuanzhang, Wan, Lei, Niu, Haihong, Ji, Fengwei, Xu, Jinzhang

“…Low bandgap PbS quantum dots (QDs) have attracted special interests serving as promising sensitizers for developing high performance near-infrared responsive…”
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Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs by Wang, Huan, Lin, Yan, Jiang, Junsong, Dong, Dan, Ji, Fengwei, Zhang, Meng, Jiang, Ming, Gan, Wei, Li, Hui, Wang, Maojun, Wei, Jin, Li, Baikui, Tang, Xi, Hu, Cungang, Cao, Wenping

“…In this article, the thermally induced threshold voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\text{TH}} </tex-math></inline-formula>) shift was…”
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A novel anion-exchange strategy for constructing high performance PbS quantum dot-sensitized solar cells by Zhou, Ru, Xu, Jun, Huang, Fei, Ji, Fengwei, Wan, Lei, Niu, Haihong, Mao, Xiaoli, Xu, Jinzhang, Cao, Guozhong

“…Near-infrared responsive PbS quantum dots (QDs) have received particular attention serving as promising candidates for next generation photovoltaics. This work…”
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Constructing aligned single-crystalline TiO 2 nanorod array photoelectrode for PbS quantum dot-sensitized solar cell with high fill factor by Zhou, Ru, Huang, Yuanzhang, Wan, Lei, Niu, Haihong, Ji, Fengwei, Xu, Jinzhang

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Oriented rutile TiO2 nanorod arrays for efficient quantum dot-sensitized solar cells with extremely high open-circuit voltage by Ji, Fengwei, Zhou, Ru, Niu, Haihong, Wan, Lei, Guo, Huier, Mao, Xiaoli, Gan, Wei, Xu, Jinzhang

“…TiO2 nanoparticles are typically employed to construct the porous films for quantum dot-sensitized solar cells (QDSCs). However, undesirable interface charge…”
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Hierarchical SnO 2 hollow sub-microspheres for panchromatic PbS quantum dot-sensitized solar cells by Pan, Shuhao, Zhou, Ru, Niu, Haihong, Wan, Lei, Huang, Bin, Huang, Yuanzhang, Ji, Fengwei, Xu, Jinzhang

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Enhanced gate breakdown and electroluminescence in p-GaN gate HEMTs under pulsed switching conditions by Wang, Huan, Yin, Yulian, Ji, Fengwei, Du, Jiahong, Li, Haoran, Zhao, Changhui, Li, Baikui, Hu, Cungang, Cao, Wenping, Tang, Xi, Yang, Shu

“…In this work, enhanced gate breakdown under pulsed switching conditions were observed and investigated in Schottky-type p-GaN gate HEMTs. The pulsed…”
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