Search Results - "Jhon, Y.I."

Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III–V MOS devices by Min, K.S., Kang, S.H., Kim, J.K., Jhon, Y.I., Jhon, M.S., Yeom, G.Y.

“…Concept of atomic layer etching (ALET) of Al2O3. •The atomic layer etching of Al2O3 as the interface passivation layer (IPL) has been studied.•The etch depth…”
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Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III–V MOS devices by Min, K.S., Kang, S.H., Kim, J.K., Yum, J.H., Jhon, Y.I., Hudnall, Todd W., Bielawski, C.W., Banerjee, S.K., Bersuker, G., Jhon, M.S., Yeom, G.Y.

“…•Atomic layer etching of BeO as the interface passivation layer (IPL) has been studied.•Precise etch depth control of BeO was achieved with the minimal GaAs…”
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