Search Results - "Jeyasingh, R G D"

An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes by Jiale Liang, Jeyasingh, R. G. D., Hong-Yu Chen, Wong, H. P.

“…Solid-state memory technology is undergoing a renaissance of new materials and novel device concepts for higher scalability as the mainstream technology, i.e.,…”
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Low-Energy Robust Neuromorphic Computation Using Synaptic Devices by Kuzum, D., Jeyasingh, R. G. D., Shimeng Yu, Wong, H.-S P.

“…Brain-inspired computing is an emerging field, which aims to reach brainlike performance in real-time processing of sensory data. The challenges that need to…”
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Adaptive Keeper Design for Dynamic Logic Circuits Using Rate Sensing Technique by Jeyasingh, R G D, Bhat, N, Amrutur, B

“…The increasing variability in device leakage has made the design of keepers for wide OR structures a challenging task. The conventional feedback keepers (CONV)…”
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Electrothermal Modeling and Design Strategies for Multibit Phase-Change Memory by Zijian Li, Jeyasingh, R. G. D., Jaeho Lee, Asheghi, M., Wong, H.-S Philip, Goodson, K. E.

“…Electrothermal transport and crystallization dynamics govern the speed and bit stability of multibit phase-change memory (PCM). This paper develops a transient…”
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Investigation of Trap Spacing for the Amorphous State of Phase-Change Memory Devices by Jeyasingh, R. G. D., Kuzum, D., Wong, H-S P.

“…The subthreshold conduction in the amorphous state of the phase-change material is dominated by the hopping of the carriers through the trap states or…”
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One-Dimensional Thickness Scaling Study of Phase Change Material (\hbox\hbox\hbox) Using a Pseudo 3-Terminal Device by SangBum Kim, Byoung-Jae Bae, Yuan Zhang, Jeyasingh, R G D, Youngkuk Kim, In-Gyu Baek, Soonoh Park, Seok-Woo Nam, Wong, H.-S P

“…To address the scalability of phase change memory (PCM), we study a 1-D thickness scaling effect on threshold switching voltage ( V th ), V th drift, high…”
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Grain Boundaries, Phase Impurities, and Anisotropic Thermal Conduction in Phase-Change Memory by Zijian Li, Jaeho Lee, Reifenberg, J. P., Asheghi, M., Jeyasingh, R. G. D., Wong, H. P., Goodson, K. E.

“…Thermal conduction strongly influences the programming energy and speed in phase-change-memory devices. The thermal conductivity of the crystalline phase of Ge…”
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First demonstration of phase change memory device using solution processed GeTe nanoparticles by Jeyasingh, R. G. D., Caldwell, M. A., Milliron, D. J., Wong, H.-S P.

“…We present the first demonstration of a functional Phase Change Memory (PCM) device fabricated using solution processed GeTe phase change nanoparticle. The…”
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Scaling behavior of PCM cells in off-state conduction by Chen, J., Jeyasingh, R. G. D., Gao, B., Lu, Y., Deng, Y. X., Liu, X. Y., Kang, J. F., Wong, H.-S P.

“…A novel phase change memory (PCM) cell with Additional Top Electrode (ATE) is introduced to investigate the scaling behavior of the off-state with the…”
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Direct Measurement of Trap Spacing in Phase Change Memory Cells Using ATE Devices by Jeyasingh, R G D, Kuzum, D, Wong, H.-S P

“…The electrical conduction in the amorphous state of the phase change material is through the localized states. The density of these trap states or the trap…”
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Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM) by Wong, H.-S P, SangBum Kim, Byoungil Lee, Caldwell, M A, Jiale Liang, Yi Wu, Jeyasingh, R G D, Shimeng Yu

“…Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies…”
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