Search Results - "Jewell, J. L."

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  1. 1

    Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization by Jewell, J.L., Harbison, J.P., Scherer, A., Lee, Y.H., Florez, L.T.

    Published in IEEE journal of quantum electronics (01-06-1991)
    “…The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m. Design…”
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  2. 2

    Generation of subpicosecond solitonlike optical pulses at 0.3 THz repetition rate by induced modulational instability by Tai, K., Tomita, A., Jewell, J. L., Hasegawa, A.

    Published in Applied physics letters (04-08-1986)
    “…We report the generation of 0.5 ps full width at half-maximum optical pulses at >0.3 THz (tunable) repetition rate via an induced modulational instability in a…”
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  3. 3

    GaAs-AlAs monolithic microresonator arrays by JEWELL, J. L, SCHERER, A, MCCALL, S. L, GODDARD, A. C, ENGLISCH, J. H

    Published in Applied physics letters (13-07-1987)
    “…Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam…”
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  4. 4

    Blue shift of the exciton resonance due to exciton-exciton interactions in a multiple-quantum-well structure by PEYGHAMBARIAN, N, GIBBS, H. M, JEWELL, J. L, ANTONETTI, A, MIGUS, A, HULIN, D, MYSYROWICZ, A

    Published in Physical review letters (17-12-1984)
    “…Femtosecond time-resolved dynamics of exciton screening and pairing is studied in a 53 A GaAs multiple-quantum-well structure at 15 and 224K. An intriguing…”
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  5. 5

    Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate by Jones, A. M., Jewell, J. L., Mabon, J. C., Reuter, E. E., Bishop, S. G., Roh, S. D., Coleman, J. J.

    Published in Applied physics letters (15-02-1999)
    “…Long-wavelength photoluminescence at 1.35 μm has been measured from an InGaAs quantum-well heterostructure deposited on disk-shaped InGaAs (xIn=0.05)…”
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  6. 6

    Fabrication of microlasers and microresonator optical switches by SCHERER, A, JEWELL, J. L, LEE, Y. H, HARBISON, J. P, FLOREZ, L. T

    Published in Applied physics letters (25-12-1989)
    “…We have microfabricated low-threshold, high-speed vertical-cavity lasers and optical switches by optimizing the mirror design, crystal growth, and ion etching…”
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  7. 7

    Vertical cavity single quantum well laser by JEWELL, J. L, HUANG, K. F, TAI, K, LEE, Y. H, FISCHER, R. J, MCCALL, S. L, CHO, A. Y

    Published in Applied physics letters (31-07-1989)
    “…We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing…”
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  8. 8

    Lasing characteristics of GaAs microresonators by JEWELL, J. L, MCCALL, S. L, LEE, Y. H, SCHERER, A, GOSSARD, A. C, ENGLISH, J. H

    Published in Applied physics letters (10-04-1989)
    “…Lasing characteristics of optically pumped 1.5-μm-diam GaAs-AlAs microresonators are reported. Room-temperature thresholds of 9 pJ were observed. Uniform…”
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  9. 9

    Transverse modes, waveguide dispersion, and 30 ps recovery in submicron GaAs/AlAs microresonators by JEWELL, J. L, MCCALL, S. L, SCHERER, A, HOUH, H. H, WHITAKER, N. A, GOSSARD, A. C, ENGLISH, J. H

    Published in Applied physics letters (03-07-1989)
    “…We have studied room-temperature optical gating of ∼5 ps pulses in GaAs/AlAs microresonators with diameters ranging from <0.5 μm to 1.5 μm by using a…”
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  10. 10

    3-pJ, 82-MHz optical logic gates in a room-temperature GaAs-AlGaAs multiple-quantum-well étalon by JEWELL, J. L, LEE, Y. H, WARREN, M, GIBBS, H. M, PEYGHAMBARIAN, N, GOSSARD, A. C, WIEGMANN, W

    Published in Applied physics letters (15-05-1985)
    “…Various pulsed logic functions (nor, xor, etc.) are performed in a high-finesse nonlinear Fabry–Perot étalon containing GaAs-AlGaAs multiple quantum wells at…”
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  11. 11

    Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalon by Gibbs, H. M., Tarng, S. S., Jewell, J. L., Weinberger, D. A., Tai, K., Gossard, A. C., McCall, S. L., Passner, A., Wiegmann, W.

    Published in Applied physics letters (01-08-1982)
    “…The quantum wells provided by a superlattice increase the binding energy of the free excitons in GaAs, permitting 300 K bistable operation of a superlattice…”
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  12. 12

    High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers by TELL, B, LEE, Y. H, BROWN-GOEBELER, K. F, JEWELL, J. L, LEIBENGUTH, R. E, ASOM, M. T, LIVESCU, G, LUTHER, L, MATTERA, V. D

    Published in Applied physics letters (29-10-1990)
    “…We have devised a novel vertical-cavity top surface-emitting GaAs quantum well laser structure which operates at 0.84 μm. The laser combines peripheral current…”
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  13. 13

    Use of a single nonlinear Fabry-Perot etalon as optical logic gates by JEWELL, J. L, RUSHFORD, M. C, GIBBS, H. M

    Published in Applied physics letters (15-01-1984)
    “…The all-optical operation of many logic elements (nor, etc.) on a single passive nonlinear Fabry–Perot etalon is discussed. An experiment using dye-filled…”
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  14. 14

    High-finesse (Al, Ga)As interference filters grown by molecular beam epitaxy by JEWELL, J. L, LEE, Y. H, MCCALL, S. L, HARBISON, J. P, FLOREZ, L. T

    Published in Applied physics letters (22-08-1988)
    “…We have measured finesse values of at least 160 in (Al,Ga)As Fabry–Perot interference filters grown by molecular beam epitaxy. Losses are low and the finesses…”
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  15. 15

    One-picosecond optical NOR gate at room temperature with a GaAs-AlGaAs multiple-quantum-well nonlinear Fabry-Perot etalon by MIGUS, A, ANTONETTI, A, HULIN, D, MYSYROWICZ, A, GIBBS, H. M, PEYGHAMBARIAN, N, JEWELL, J. L

    Published in Applied physics letters (1985)
    “…The first time-resolved observation of a GaAs-AlGaAs multiple-quantum-well optical NOR gate is reported at room temperature with a femtosecond laser system…”
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  16. 16

    Electrodispersive multiple quantum well modulator by LEE, Y. H, JEWELL, J. L, WALKER, S. J, TU, C. W, HARBISON, J. P, FLOREZ, L. T

    Published in Applied physics letters (31-10-1988)
    “…Quantum-confined Stark effect is combined with a Fabry–Perot resonance to build a multiple quantum well electro-optic modulator. The structure consists of…”
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  17. 17

    Dynamics of carrier capture in an InGaAs/GaAs quantum well trap by OBERLI, D. Y, SHAH, J, JEWELL, J. L, DAMEN, T. C, CHAND, N

    Published in Applied physics letters (13-03-1989)
    “…We report on a time-resolved luminescence study of the dynamics of carrier capture in a strained quantum well of InGaAs embedded in GaAs confining layers…”
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  18. 18

    Speed effectiveness of windowless GaAs étalons as optical logic gates by LEE, Y. H, GIBBS, H. M, JEWELL, J. L, DUFFY, J. F, VENKATESAN, T, GOSSARD, A. C, WIEGMANN, W, ENGLISH, J. H

    Published in Applied physics letters (01-09-1986)
    “…The effectiveness of surface recombination in speeding up the relaxation of a GaAs étalon is reported. Various thickness (1.5, 0.5, 0.3, 0.13 μm) bulk GaAs…”
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  19. 19

    High-speed modulation of vertical-cavity surface-emitting lasers by Choa, F.S., Lee, Y.H., Koch, T.L., Burrus, C.A., Tell, B.H., Jewell, J.L., Leibenguth, R.E.

    Published in IEEE photonics technology letters (01-08-1991)
    “…The IM (intensity modulation) and FM (frequency modulation) characteristics of vertical-cavity surface-emitting lasers are studied. The laser has high FM…”
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  20. 20

    Protein kinase A activates the Hippo pathway to modulate cell proliferation and differentiation by Yu, Fa-Xing, Zhang, Yifan, Park, Hyun Woo, Jewell, Jenna L, Chen, Qian, Deng, Yaoting, Pan, Duojia, Taylor, Susan S, Lai, Zhi-Chun, Guan, Kun-Liang

    Published in Genes & development (01-06-2013)
    “…The Hippo tumor suppressor pathway plays an important role in tissue homeostasis that ensures development of functional organs at proper size. The YAP…”
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