Search Results - "Jewell, J. L."
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1
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
Published in IEEE journal of quantum electronics (01-06-1991)“…The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m. Design…”
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2
Generation of subpicosecond solitonlike optical pulses at 0.3 THz repetition rate by induced modulational instability
Published in Applied physics letters (04-08-1986)“…We report the generation of 0.5 ps full width at half-maximum optical pulses at >0.3 THz (tunable) repetition rate via an induced modulational instability in a…”
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3
GaAs-AlAs monolithic microresonator arrays
Published in Applied physics letters (13-07-1987)“…Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam…”
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4
Blue shift of the exciton resonance due to exciton-exciton interactions in a multiple-quantum-well structure
Published in Physical review letters (17-12-1984)“…Femtosecond time-resolved dynamics of exciton screening and pairing is studied in a 53 A GaAs multiple-quantum-well structure at 15 and 224K. An intriguing…”
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5
Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate
Published in Applied physics letters (15-02-1999)“…Long-wavelength photoluminescence at 1.35 μm has been measured from an InGaAs quantum-well heterostructure deposited on disk-shaped InGaAs (xIn=0.05)…”
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6
Fabrication of microlasers and microresonator optical switches
Published in Applied physics letters (25-12-1989)“…We have microfabricated low-threshold, high-speed vertical-cavity lasers and optical switches by optimizing the mirror design, crystal growth, and ion etching…”
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7
Vertical cavity single quantum well laser
Published in Applied physics letters (31-07-1989)“…We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing…”
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8
Lasing characteristics of GaAs microresonators
Published in Applied physics letters (10-04-1989)“…Lasing characteristics of optically pumped 1.5-μm-diam GaAs-AlAs microresonators are reported. Room-temperature thresholds of 9 pJ were observed. Uniform…”
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9
Transverse modes, waveguide dispersion, and 30 ps recovery in submicron GaAs/AlAs microresonators
Published in Applied physics letters (03-07-1989)“…We have studied room-temperature optical gating of ∼5 ps pulses in GaAs/AlAs microresonators with diameters ranging from <0.5 μm to 1.5 μm by using a…”
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10
3-pJ, 82-MHz optical logic gates in a room-temperature GaAs-AlGaAs multiple-quantum-well étalon
Published in Applied physics letters (15-05-1985)“…Various pulsed logic functions (nor, xor, etc.) are performed in a high-finesse nonlinear Fabry–Perot étalon containing GaAs-AlGaAs multiple quantum wells at…”
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11
Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalon
Published in Applied physics letters (01-08-1982)“…The quantum wells provided by a superlattice increase the binding energy of the free excitons in GaAs, permitting 300 K bistable operation of a superlattice…”
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12
High-power cw vertical-cavity top surface-emitting GaAs quantum well lasers
Published in Applied physics letters (29-10-1990)“…We have devised a novel vertical-cavity top surface-emitting GaAs quantum well laser structure which operates at 0.84 μm. The laser combines peripheral current…”
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13
Use of a single nonlinear Fabry-Perot etalon as optical logic gates
Published in Applied physics letters (15-01-1984)“…The all-optical operation of many logic elements (nor, etc.) on a single passive nonlinear Fabry–Perot etalon is discussed. An experiment using dye-filled…”
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14
High-finesse (Al, Ga)As interference filters grown by molecular beam epitaxy
Published in Applied physics letters (22-08-1988)“…We have measured finesse values of at least 160 in (Al,Ga)As Fabry–Perot interference filters grown by molecular beam epitaxy. Losses are low and the finesses…”
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15
One-picosecond optical NOR gate at room temperature with a GaAs-AlGaAs multiple-quantum-well nonlinear Fabry-Perot etalon
Published in Applied physics letters (1985)“…The first time-resolved observation of a GaAs-AlGaAs multiple-quantum-well optical NOR gate is reported at room temperature with a femtosecond laser system…”
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16
Electrodispersive multiple quantum well modulator
Published in Applied physics letters (31-10-1988)“…Quantum-confined Stark effect is combined with a Fabry–Perot resonance to build a multiple quantum well electro-optic modulator. The structure consists of…”
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17
Dynamics of carrier capture in an InGaAs/GaAs quantum well trap
Published in Applied physics letters (13-03-1989)“…We report on a time-resolved luminescence study of the dynamics of carrier capture in a strained quantum well of InGaAs embedded in GaAs confining layers…”
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18
Speed effectiveness of windowless GaAs étalons as optical logic gates
Published in Applied physics letters (01-09-1986)“…The effectiveness of surface recombination in speeding up the relaxation of a GaAs étalon is reported. Various thickness (1.5, 0.5, 0.3, 0.13 μm) bulk GaAs…”
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19
High-speed modulation of vertical-cavity surface-emitting lasers
Published in IEEE photonics technology letters (01-08-1991)“…The IM (intensity modulation) and FM (frequency modulation) characteristics of vertical-cavity surface-emitting lasers are studied. The laser has high FM…”
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20
Protein kinase A activates the Hippo pathway to modulate cell proliferation and differentiation
Published in Genes & development (01-06-2013)“…The Hippo tumor suppressor pathway plays an important role in tissue homeostasis that ensures development of functional organs at proper size. The YAP…”
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