Search Results - "Jessop, P.E."

Modeling Defect Enhanced Detection at 1550 nm in Integrated Silicon Waveguide Photodetectors by Logan, D.F., Jessop, P.E., Knights, A.P.

“…Recent attention has been attracted by photo-detectors integrated onto silicon-on-insulator (SOI) waveguides that exploit the enhanced sensitivity to…”
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Fabrication of SiGe optical waveguides using VLSI processing techniques by Pearson, M.R.T., Jessop, P.E., Bruce, D.M., Wallace, S., Mascher, P., Ojha, J.

“…The fabrication of rib waveguides in SiGe using the local oxidation of silicon (LOCOS) was investigated. Samples consisted of strained Si/sub .97/Ge/sub .03/…”
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Design rules for slanted-angle polarization rotators by Henghua Deng, Yevick, D.O., Brooks, C., Jessop, P.E.

“…A simple and general set of design rules for slanted-angle polarization-rotating waveguides is presented in this paper. These design rules are employed to…”
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Design rules for slanted-angle polarization rotators by Henghua Deng, Henghua Deng, Yevick, D.O, Brooks, C, Jessop, P.E

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A quantum-well waveguide photodetector for high-precision wavelength monitoring about 1.55 μm by Densmore, A., Jessop, P.E.

“…A two-segment InGaAsP rib waveguide photodetector is shown to function as a high resolution wavelength monitor in the 1.55-μm spectral region. For two in-line…”
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The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides by Logan, D.F., Jessop, P.E., Knights, A.P., Gwilliam, R.M., Halsall, M.P.

“…The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found…”
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Crosstalk reduction in intersecting rib waveguides by Daly, M.G., Jessop, P.E., Yevick, D.

“…A numerical study of the throughput and crosstalk in intersecting semiconductor rib waveguides was carried out using the beam propagation method. The fraction…”
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Optical properties of pseudomorphic Si/sub 1-x/Ge/sub x/ for Si-based waveguides at the λ=1300-nm and 1550-nm telecommunications wavelength bands by Janz, S., Baribeau, J.-M., Delage, A., Lafontaine, H., Mailhot, S., Williams, R.L., Xu, D.-X., Bruce, D.M., Jessop, P.E., Robillard, M.

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Optical properties of pseudomorphic Si/sub 1-x/Ge/sub x/ for Si-based waveguides at the /spl lambda/=1300-nm and 1550-nm telecommunications wavelength bands by Janz, S., Baribeau, J.-M., Delage, A., Lafontaine, H., Mailhot, S., Williams, R.L., Xu, D.-X., Bruce, D.M., Jessop, P.E., Robillard, M.

“…The index of refraction for pseudomorphic Si/sub 1-x/Ge/sub x/ layers grown on Si has been measured at wavelengths /spl lambda/=1310 mn and /spl lambda/=1550…”
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Optical signal distribution in waveguide-coupled metal-smiconductor-metal detector arrays by Ersoni, M., Xiucheng Wu, Jessop, P.E., Noad, J.P.

“…We report the use of waveguide-coupled GaAs metal-semiconductor-metal (MSM) photodetectors for signal distribution in an optoelectronic matrix switch. The…”
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A relationship for temperature dependence of threshold current for 1.3-μm compressively strained-layer multiple-quantum-well lasers by Huang, R., Simmons, J.G., Jessop, P.E., Evans, J.

“…Assuming that the differential gain is a linear function of temperature, a formula is derived to describe the threshold current as a function of temperature. A…”
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Thermal behavior of tensile-strain InGaAsP-InP lasers with varying ridgewidth by Huang, R., Simmons, J.G., Jessop, P.E., Evans, J.

“…The thermal behavior of tensile-strain InGaAsP-InP laser diodes with varying ridgewidth is investigated experimentally. The temperature rise during…”
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Inline quantum-well waveguide photodetectors for the measurement of wavelength shifts by Xiucheng Wu, Jessop, P.E., Bruce, D.M., Robinson, B.J., Thompson, D.A.

“…A two-segment GaAs-InGaP-InGaAs p-i-n quantum-well waveguide photodiode has been fabricated and demonstrated to function as a sensitive wavelength monitor. The…”
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Ridge waveguide quantum-well wavelength division demultiplexing detector with four channels by Moss, D., Ye, F., Landheer, D., Jessop, P.E., Simmons, J.G., Champion, H.G., Templeton, I., Chatenoud, F.

“…The authors report a four-channel wavelength-division-demultiplexing detector based on a reverse-biased GaAs/AlGaAs single-quantum-well graded index separate…”
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Optical and electrical oscillations in double-heterojunction negative differential resistance devices by Kovacic, S.J., Ojha, J.J., Simmons, J.G., Jessop, P.E., Mand, R.S., SpringThorpe, A.J.

“…The observation of optical and electrical oscillations is reported in a GaAs/AlGaAs digital optoelectronic switch (DOES) structure. The oscillations are…”
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Wavelength monitoring devices for use in optical fiber sensors by Densmore, A., Jessop, P.E.

“…Summary form only given. A two-element, GaAs quantum well photodetector has been demonstrated to act as a sensitive wavelength monitor for use in optical fiber…”
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Vertically-Stacked SOI Waveguides for 3-D Photonic Circuits by Brooks, C.J., Doylend, J.K., Knights, A.P., Jessop, P.E.

“…We present a fabrication process for vertically-stacked SOI waveguides using spin-on-glass bonding to process individual layers. Simulations have shown that…”
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Monitoring infrared light using a commercial variable optical attenuator subjected to defect engineering by Knights, A.P., Jessop, P.E., Bruce, D.M., Logan, D.F., Luff, B.J., Zheng, D., Shafiiha, R., Asghari, M.

“…The fabrication of silicon-waveguide power monitors via the introduction of defects to commercially produced variable optical attenuators is demonstrated…”
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Integrated Silicon Waveguide-based Structures for Terminal Detection of 1550nm by Doylend, J.K., Foster, P.J., Bradley, J.D.B., Jessop, P.E., Knights, A.P.

“…We describe the fabrication of defect engineered waveguide detectors, and demonstrate that with optimal thermal treatment, detector dark current may be…”
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Beating the Heat: Controlling Thermal Effects in Plasma Dispersion Tuned SOI Waveguide Devices by Waldron, P.D., Panesar, H., Tarr, N.G., Smy, T.J., Jessop, P.E.

“…Numerical solution of the semiconductor and heat flow equations is used to show that fast plasma dispersion tuning of bipolar SOI waveguide devices can be made…”
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