Search Results - "Jessen, Gregg H."

Guest Editorial: The dawn of gallium oxide microelectronics by Higashiwaki, Masataka, Jessen, Gregg H.

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beta -Ga2O3 MOSFETs for Radio Frequency Operation by Green, Andrew Joseph, Chabak, Kelson D., Baldini, Michele, Moser, Neil, Gilbert, Ryan, Fitch, Robert C., Wagner, Gunter, Galazka, Zbigniew, Mccandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

“…We demonstrate a β-Ga 2 O 3 MOSFET with record-high transconductance (gm) of 21 mS/mm and extrinsic cutoff frequency (fT) and maximum oscillating frequency…”
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Donors and deep acceptors in β-Ga2O3 by Neal, Adam T., Mou, Shin, Rafique, Subrina, Zhao, Hongping, Ahmadi, Elaheh, Speck, James S., Stevens, Kevin T., Blevins, John D., Thomson, Darren B., Moser, Neil, Chabak, Kelson D., Jessen, Gregg H.

“…We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga2O3 through temperature dependent van der Pauw and Hall effect…”
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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition by Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Boeckl, John J., Brown, Jeff L., Tetlak, Stephen E., Green, Andrew J., Moser, Neil A., Crespo, Antonio, Thomson, Darren B., Fitch, Robert C., McCandless, Jonathan P., Jessen, Gregg H.

“…Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3…”
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Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices by Neal, Adam T., Mou, Shin, Lopez, Roberto, Li, Jian V., Thomson, Darren B., Chabak, Kelson D., Jessen, Gregg H.

“…Understanding the origin of unintentional doping in Ga 2 O 3 is key to increasing breakdown voltages of Ga 2 O 3 based power devices. Therefore, transport and…”
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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance by Green, Andrew J., Gillespie, James K., Fitch, Robert C., Walker, Dennis E., Lindquist, Miles, Crespo, Antonio, Brooks, Dan, Beam, Edward, Xie, Andy, Kumar, Vipan, Jimenez, Jose, Lee, Cathy, Cao, Yu, Chabak, Kelson D., Jessen, Gregg H.

“…We report the dc and RF performance of ScAlN/GaN high-electron-mobility transistors (HEMTs). The ScAlN/GaN material was epitaxially grown onto a GaN template…”
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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge by Moser, Neil A., McCandless, Jonathan P., Crespo, Antonio, Leedy, Kevin D., Green, Andrew J., Heller, Eric R., Chabak, Kelson D., Peixoto, Nathalia, Jessen, Gregg H.

“…We report on Sn-doped β -Ga2O3 MOSFETs grown by molecular beam epitaxy with as-grown carrier concentrations from 0.7 × 1018 to 1.6 × 1018 cm−3 and a fixed…”
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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band by Moser, Neil A., Asel, Tadj, Liddy, Kyle J., Lindquist, Miles, Miller, Nicholas C., Mou, Shin, Neal, Adam, Walker, Dennis E., Tetlak, Steve, Leedy, Kevin D., Jessen, Gregg H., Green, Andrew J., Chabak, Kelson D.

“…DC, small, and large signal results are shown under continuous wave and pulsed conditions for a β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistor…”
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Thermally-Aware Layout Design of β-Ga₂O₃ Lateral MOSFETs by Kim, Samuel H., Shoemaker, Daniel, Chatterjee, Bikramjit, Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Liddy, Kyle J., Jessen, Gregg H., Graham, Samuel, Choi, Sukwon

“…<inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-phase gallium oxide (<inline-formula> <tex-math notation="LaTeX">\beta…”
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Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography by Blumenschein, Nicholas A., Moule, Taylor, Dalcanale, Stefano, Mercado, Elisha, Singh, Manikant, Pomeroy, James W., Kuball, Martin, Wagner, Gunter, Paskova, Tania, Muth, John F., Chabak, Kelson D., Moser, Neil A., Jessen, Gregg H., Heller, Eric R., Miller, Nicholas C., Green, Andrew J., Popp, Andreas, Crespo, Antonio, Leedy, Kevin, Lindquist, Miles

“…β-Ga 2 O 3 thin-channel MOSFETs were evaluated using both dc and pulsed I-V measurements. The reported pulsed I-V technique was used to study selfheating…”
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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs by Chabak, Kelson D., McCandless, Jonathan P., Moser, Neil A., Green, Andrew J., Mahalingam, Krishnamurthy, Crespo, Antonio, Hendricks, Nolan, Howe, Brandon M., Tetlak, Stephen E., Leedy, Kevin, Fitch, Robert C., Wakimoto, Daiki, Sasaki, Kohei, Kuramata, Akito, Jessen, Gregg H.

“…We report enhancement-mode <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 (BGO) MOSFETs on a Si-doped homoepitaxial…”
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Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices by Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G., Crespo, A., Langley, D., Denninghoff, D.J., Trejo, M., Heller, E.R.

“…AlGaN/GaN high-electron mobility transistors (HEMTs) were fabricated on SiC substrates with epitaxial layers grown by multiple suppliers and methods. Devices…”
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Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition by Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Mahalingam, Krishnamurthy, Brown, Jeff L., Green, Andrew J., Bowers, Cynthia T., Crespo, Antonio, Thomson, Darren B., Jessen, Gregg H.

“…Carrier concentration control by impurity dopants in epitaxial Ga2O3 thin films is progressing to deliver high mobility films for device structures. Si-doped…”
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Ionic Metal-Oxide TFTs for Integrated Switching Applications by Schuette, Michael L., Green, Andrew J., Leedy, Kevin, Crespo, Antonio, Tetlak, Stephen E., Sutherlin, Karynn A., Jessen, Gregg H.

“…Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those…”
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Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates by Chabak, K.D., Gillespie, J.K., Miller, V., Crespo, A., Roussos, J., Trejo, M., Walker, D.E., Via, G.D., Jessen, G.H., Wasserbauer, J., Faili, F., Babic, D.I., Francis, D., Ejeckam, F.

“…We report on electrical characterization and uniformity measurements of the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs)…”
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Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency by Chabak, Kelson D, Trejo, Manuel, Crespo, Antonio, Walker, Dennis E, Jinwei Yang, Gaska, Remis, Kossler, Mauricio, Gillespie, James K, Jessen, Gregg H, Trimble, Virginia, Via, Glen D

“…We report on a dc/RF performance of lattice-strained AlInN/GaN high-electron mobility transistors (HEMTs) on SiC substrate. HEMT devices were fabricated with…”
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Progress towards III-nitrides HEMTs on free-standing diamond substrates for thermal management by Trejo, Manuel, Jessen, Gregg H., Chabak, Kelson D., Gillespie, James K., Crespo, Antonio, Kossler, Mauricio, Trimble, Virginia, Langley, Derrick, Heller, Eric R., Claflin, Bruce, Walker, Dennis E., Poling, Brian, Gilbert, Ryan, Via, Glen D., Hoelscher, John, Roussos, Jason, Ejeckam, Felix, Zimmer, Jerry

“…In this paper, we discuss the progress in the application of silicon‐on‐diamond (SOD) and chemically vapour deposited (CVD) diamond wafers as an alternative…”
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Pulsed Active Load-Pull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs by Seok Joo Doo, Roblin, P., Balasubramanian, V., Taylor, R., Dandu, K., Strahler, J., Jessen, G.H., Teyssier, J.-P.

“…A novel pulsed class-B load-pull measurement system is developed to characterize GaN HEMTs targeting the design of high-efficiency class-B or class-C power…”
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Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer by Seok Joo Doo, Roblin, P., Jessen, G.H., Fitch, R.C., Gillespie, J.K., Moser, N.A., Crespo, A., Simpson, G., Jon King

“…IV knee walk-out in AlGaN/GaN high electron mobility transistors (HEMTs) on a Sapphire substrate is analyzed using dynamic radio frequency (RF) load-lines…”
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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs by Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Fitch, Robert C., Baldini, Michele, Fiedler, Andreas, Irmscher, Klaus, Wagner, Gunter, Galazka, Zbigniew, Tetlak, Stephen E., Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

“…A Sn-doped (100) β-Ga 2 O 3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) β-Ga 2 O 3…”
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