Carbon molecular beam epitaxy on various semiconductor substrates

Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III–V (GaAs,...

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Bibliographic Details
Published in:	Materials research bulletin Vol. 47; no. 10; pp. 2772 - 2775
Main Authors:	Jerng, S.K., Yu, D.S., Lee, J.H., Kim, Y.S., Kim, C., Yoon, S., Chun, S.H.
Format:	Journal Article
Language:	English
Published:	United States Elsevier Ltd 01-10-2012
Subjects:	A. Thin films ATOMIC FORCE MICROSCOPY B. Epitaxial growth C. Atomic force microscopy C. Raman spectroscopy D. Microstructure GALLIUM ARSENIDES GALLIUM NITRIDES GRAPHENE GRAPHITE INDIUM PHOSPHIDES LAYERS MATERIALS SCIENCE MICROSTRUCTURE MOLECULAR BEAM EPITAXY NANOSCIENCE AND NANOTECHNOLOGY RAMAN SPECTROSCOPY SEMICONDUCTOR MATERIALS SUBSTRATES THIN FILMS ZINC OXIDES ZINC SELENIDES D. Microstructure C. Raman spectroscopy A. Thin films C. Atomic force microscopy B. Epitaxial growth
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Summary:	Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III–V (GaAs, GaN, InP), and group II–VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.
ISSN:	0025-5408 1873-4227
DOI:	10.1016/j.materresbull.2012.04.123