Search Results - "Jeong, Jinheon"

Reversible and controllable threshold voltage modulation for n-channel MoS2 and p-channel MoTe2 field-effect transistors via multiple counter doping with ODTS/poly-L-lysine charge enhancers by Seo, Seung Gi, Jeong, Jinheon, Kim, Seung Yeob, Kumar, Ajit, Jin, Sung Hun

“…Confronted by the inherent physical limitations in scaling down Si technology, transition metal dichalcogenides (TMDCs) as alternatives are being tremendously…”
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Progress in light-to-frequency conversion circuits based on low dimensional semiconductors by Seo, Seung Gi, Kim, Seung Yeob, Jeong, Jinheon, Jin, Sung Hun

“…As the scaling down of Si devices in the range less than few nm has been expedited up to a physical limit of Si, low dimensional materials have been regarded…”
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Bias stress instability in multilayered MoTe2 field effect transistors under DC and pulse‐mode operation by Seo, Seung Gi, Jeong, Jinheon, Kim, Seung Yeob, Kim, S., Kim, Kwangtaek, Kim, Kyuwon, Jin, Sung Hun

“…Here, bias stress instability on multilayered MoTe2 field effect transistors (m‐MoTe2 FETs) with encapsulation of hydrophobic polymers (cyclic transparent…”
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Scalable and selective N-type conversion for carbon nanotube transistors via patternable polyvinyl alcohol stacked with hydrophobic layers and their application to complementary logic circuits by Kim, Seungyeob, Baek, Geun Woo, Jeong, Jinheon, Seo, Seung Gi, Jin, Sung Hun

“…Herein, this study reports scalable and selective n-type conversion (N/C) approach for single walled carbon nanotube (SWNT) transistors with high…”
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Wafer‐Scale Replication of Plasmonic Nanostructures via Microbubbles for Nanophotonics by Hwang, Jehwan, Zhang, Yue, Kim, Bongjoong, Jeong, Jinheon, Yi, Jonghun, Kim, Dong Rip, Kim, Young L., Urbas, Augustine, Ariyawansa, Gamini, Xu, Baoxing, Ku, Zahyun, Lee, Chi Hwan

“…Quasi‐3D plasmonic nanostructures are in high demand for their ability to manipulate and enhance light‐matter interactions at subwavelength scales, making them…”
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Channel Shape Effects on Device Instability of Amorphous Indium-Gallium-Zinc Oxide Thin Film Transistors by Seo, Seung Gi, Yu, Seung Jae, Kim, Seung Yeob, Jeong, Jinheon, Jin, Sung Hun

“…Channel shape dependency on device instability for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various…”
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Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors by Seo, Seung Gi, Ryu, Jae Hyeon, Kim, Seung Yeob, Jeong, Jinheon, Jin, Sung Hun

“…Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have…”
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Remote Recognition of Moving Behaviors for Captive Harbor Seals Using a Smart-Patch System via Bluetooth Communication by Kim, Seungyeob, Jeong, Jinheon, Seo, Seung Gi, Im, Sehyeok, Lee, Won Young, Jin, Sung Hun

“…Animal telemetry has been recognized as a core platform for exploring animal species due to future opportunities in terms of its contribution toward marine…”
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Photo-Detectivity Modulation in Complementary Light-to-Frequency Conversion Circuits via Oxygen Vacancy Controlled Amorphous Indium-Gallium-Zinc Oxide Films by Seo, Seung Gi, Jeong, Jinheon, Jin, Sung Hun

“…Herein, light-to-frequency conversion circuits (LFCs) using n-type amorphous indium-gallium-zinc oxide thin film transistors (a-IGZO TFTs) and p-type…”
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Influence of air atmosphere on electrical characteristics of p-type MoTe2 FETs under DC and pulsed mode operation by Seo, Seung Gi, Jeong, Jinheon, Jin, Sung Hun

“…Herein, ambient effects on electrical characteristics of p-type MoTe2 FETs under DC and pulse mode measurements were systematically investigated. As a result…”
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Flexible Photodetectors: Flexible Light‐to‐Frequency Conversion Circuits Built with Si‐Based Frequency‐to‐Digital Converters via Complementary Photosensitive Ring Oscillators with p‐Type SWNT and n‐Type a‐IGZO Thin Film Transistors (Small 26/2021) by Jeong, Jinheon, Seo, Seung Gi, Yu, Seung‐Myeong, Kang, Yunha, Song, Junyoung, Jin, Sung Hun

“…As a system‐level photodetector, flexible light‐to‐frequency conversion circuits (LFCs) are implemented using a‐IGZO and SWNT thin‐film transistors. Combined…”
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Transparent Intracellular Sensing Platform with Si Needles for Simultaneous Live Imaging by Park, Woohyun, Kim, Eun Mi, Jeon, Yale, Lee, Junsang, Yi, Jonghun, Jeong, Jinheon, Kim, Bongjoong, Jeong, Byeong Guk, Kim, Dong Rip, Kong, Hyunjoon, Lee, Chi Hwan

“…Vertically ordered Si needles are of particular interest for long-term intracellular recording owing to their capacity to infiltrate living cells with…”
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Flexible Light‐to‐Frequency Conversion Circuits Built with Si‐Based Frequency‐to‐Digital Converters via Complementary Photosensitive Ring Oscillators with p‐Type SWNT and n‐Type a‐IGZO Thin Film Transistors by Jeong, Jinheon, Seo, Seung Gi, Yu, Seung‐Myeong, Kang, Yunha, Song, Junyoung, Jin, Sung Hun

“…In this study, as system‐level photodetectors, light‐to‐frequency conversion circuits (LFCs) are realized by i) photosensitive ring oscillators (ROs) composed…”
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Bias stress instability in multilayered MoTe 2 field effect transistors under DC and pulse‐mode operation by Seo, Seung Gi, Jeong, Jinheon, Kim, Seung Yeob, Kim, S., Kim, Kwangtaek, Kim, Kyuwon, Jin, Sung Hun

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Photosensitive Complementary Inverters Composed of n‐Channel ReS2 and p‐Channel Single‐Walled Carbon Nanotube Field‐Effect Transistors by Jeong, Jinheon, Seo, Seung Gi, Kim, Seung Yeob, Jin, Sung Hun

“…For robustness on security and ultralow power consumption for Internet of Things (IoT) sensors, including ultraminiaturization for high chip density, 2D…”
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Photosensitive Complementary Inverters Composed of n‐Channel ReS 2 and p‐Channel Single‐Walled Carbon Nanotube Field‐Effect Transistors by Jeong, Jinheon, Seo, Seung Gi, Kim, Seung Yeob, Jin, Sung Hun

“…For robustness on security and ultralow power consumption for Internet of Things (IoT) sensors, including ultraminiaturization for high chip density, 2D…”
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Origin of Off‐State Current in Multilayered MoTe 2 Field‐Effect Transistors: Gate‐Induced Drain Leakage and Poole–Frenkel Conduction by Seo, Seung Gi, Park, Young Ho, Jeong, Jinheon, Kim, Seung Yeob, Jin, Sung Hun

“…Herein, as one of bias‐dependent channel leakage issues in p‐channel multilayered molybdenum ditelluride field‐effect transistors (m‐MoTe 2 FETs), anomalous…”
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Origin of Off‐State Current in Multilayered MoTe2 Field‐Effect Transistors: Gate‐Induced Drain Leakage and Poole–Frenkel Conduction by Seo, Seung Gi, Park, Young Ho, Jeong, Jinheon, Kim, Seung Yeob, Jin, Sung Hun

“…Herein, as one of bias‐dependent channel leakage issues in p‐channel multilayered molybdenum ditelluride field‐effect transistors (m‐MoTe2 FETs), anomalous…”
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Enhancement of Photodetective Properties on Multilayered MoS 2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors by Seo, Seung Gi, Ryu, Jae Hyeon, Kim, Seung Yeob, Jeong, Jinheon, Jin, Sung Hun

“…Photodetectors and display backplane transistors based on molybdenum disulfide (MoS ) have been regarded as promising topics. However, most studies have…”
Get full text