Search Results - "Jeong, Haedo"
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Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review
Published in International journal of precision engineering and manufacturing-green technology (01-01-2022)“…Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in…”
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Mechanical aspects of the chemical mechanical polishing process: A review
Published in International journal of precision engineering and manufacturing (01-04-2016)“…Chemical mechanical polishing (CMP) is an essential semiconductor manufacturing process because of its local and global planarization ability in fabricating…”
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Temperature Control for High Removal Rate and Low Dishing in TGV CMP
Published in International journal of precision engineering and manufacturing (01-09-2024)“…Chemical Mechanical Planarization (CMP) is the most well-known process for global planarization of wafer surfaces. The importance of interposers has been…”
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Slurry components in metal chemical mechanical planarization (CMP) process: A review
Published in International journal of precision engineering and manufacturing (01-12-2016)“…Chemical mechanical planarization (CMP) is a wet polishing technique employed to smooth the surface of various materials using a combination of chemical and…”
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Novel Probability Density Function of Pad Asperity by Wear Effect over Time in Chemical Mechanical Planarization
Published in Materials (15-04-2024)“…Chemical mechanical planarization (CMP) reduces film thickness, eliminates step height, and achieves high levels of planarity in semiconductor manufacturing…”
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Analysis of removal mechanism on oxide CMP using mixed abrasive slurry
Published in International journal of precision engineering and manufacturing (01-03-2015)“…Mixed abrasive slurry (MAS) is one of the non-traditional slurries with more than two different sizes, shapes or materials of abrasives which are to improve a…”
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X-ray Diffraction Analysis of Damaged Layer During Polishing of Silicon Carbide
Published in International journal of precision engineering and manufacturing (2023)“…This study focused on the damaged layer of silicon carbide produced during polishing. For the experiment, 2-inch single-crystal 4H-SiC was used. In order to…”
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Analysis of Correlation between Pad Temperature and Asperity Angle in Chemical Mechanical Planarization
Published in Applied sciences (01-02-2021)“…Chemical mechanical planarization (CMP) is a technology widely employed in device integration and planarization processes used in semiconductor fabrication. In…”
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Modeling of step height reduction with temperature function in copper CMP
Published in Journal of mechanical science and technology (01-12-2023)“…Chemical mechanical polishing (CMP) is a global planarization process that effectively reduces the step height of patterns. Conventional mathematical models…”
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Mathematical modeling based on contact mechanism due to elastic and plastic deformation of pad asperities during CMP
Published in Journal of mechanical science and technology (2020)“…Technologies in semiconductor industry have been developed into a three-dimensional multilayer wiring for high integration of devices. Chemical mechanical…”
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Effect of mixing ratio of non-spherical particles in colloidal silica slurry on oxide CMP
Published in International journal of precision engineering and manufacturing (01-10-2017)“…Colloidal silica and fumed silica are common slurry materials for oxide chemical mechanical polishing (CMP). Non-spherical colloidal silica particles are…”
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Effect of non-spherical colloidal silica particles on removal rate in oxide CMP
Published in International journal of precision engineering and manufacturing (01-12-2015)“…Oxide CMP generally has used colloidal silica slurry and fumed silica slurry. To compensate the lower removal rate (RR) of colloidal silica slurry compared to…”
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Mechanical effect of colloidal silica in copper chemical mechanical planarization
Published in Journal of materials processing technology (19-11-2009)“…The mechanical effect of colloidal silica concentration in copper chemical mechanical planarization (CMP) is considered in this paper by using friction force…”
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The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer
Published in International journal of precision engineering and manufacturing-green technology (01-04-2015)“…Demand for sapphire wafer has increased with growth of LED market. Chemical mechanical polishing (CMP) comprises a large part of wafering cost since the CMP…”
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15
Effect of the Lapping Platen Groove Density on the Characteristics of Microabrasive-Based Lapping
Published in Micromachines (Basel) (14-08-2020)“…Microabrasive-based lapping is widely used in the manufacturing of single-crystal substrates such as sapphire, SiC, and GaN. Although many studies have been…”
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Effect of spray nozzle position on pad temperature distribution and wafer non-uniformity
Published in Journal of mechanical science and technology (01-12-2019)“…During chemical mechanical planarization (CMP), the pad surface temperature generally increases due to the friction between the wafer and the pad. A pad with a…”
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Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard–brittle materials used in light-emitting diodes
Published in Journal of crystal growth (01-07-2011)“…In the light-emitting diode (LED) market, the market share for hard–brittle materials has increased. However, using the wafering process, the hard–brittle…”
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Effect of initial deflection of diamond wire on thickness variation of sapphire wafer in multi-wire saw
Published in International journal of precision engineering and manufacturing-green technology (01-04-2015)“…Sapphire wafers are widely used as substrates for fabricating gallium nitride light-emitting diodes. The quality of light-emitting diodes depends on the total…”
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Material Removal Model for Lapping Process Based on Spiral Groove Density
Published in Applied sciences (2021)“…The increasing demand for single-crystal wafers combined with the increase in diameter of semiconductor wafers has warranted further improvements in thickness…”
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Chemical mechanical planarization of advanced package substrate by controlling selectivity of copper to polymer
Published in Journal of mechanical science and technology (01-08-2018)“…Chemical mechanical planarization (CMP) was applied on an advanced package substrate by removing unnecessary polymer on a copper pillar since this could not be…”
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