Search Results - "Jeng, M.C."

An investigation of thermal sprayed aluminum/hard anodic composite coating on wear and corrosion resistant performance by Chang, C.H., Jeng, M.C., Su, C.Y., Chang, C.L.

“…Thermal sprayed coatings were developed mostly for wear and corrosion resistance in numerous applications such as power generating, steel, chemical and…”
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Fabrication and integration of high performance mixed signal and RF passive components in 0.13/spl mu/m Cu BEOL technologies by Chen, Z., Lin, K.M., Kuo, C.C., Ko, T.C., Huang, J.C., Wang, J.P., Lin, Y.F., Wu, T.W., Su, T.C., Liao, C.C., Jeng, M.C.

“…High-performance passive components are keys to reach system-on-a-chip (SOC) solution of mixed-signal and radio frequency (RF) circuit design. This paper…”
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ESD protection for the tolerant I/O circuits using PESD implantation by Tang, Howard T.H., Chen, S.S., Liu, Scott, Lee, M.T., Liu, C.H., Wang, M.C., Jeng, M.C.

“…In this paper, we propose an electrostatic discharge (ESD) solution with cascode structure for deep-submicron integrated circuits technology to enhance its ESD…”
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Temperature effects on MOSFET driving capability and voltage gain by Chen, K, Huang, J.H, Ma, J.Z, Liu, Z.H, Jeng, M.C, Ko, P.K, Hu, C

“…This paper attempts to discuss some important temperature effects on MOSFET analogue applications. For this purpose, measurement data taken over wide ranges of…”
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Fabrication and characterization of 1.5fF//spl mu/m/sup 2/ high-performance low-cost metal-insulator-metal capacitor in 0.13/spl mu/m and below Cu BEOL technologies by Chen, Z., Lin, K.M., Kuo, C.C., Lin, Y.F., Huang, J.C., Su, T.C., Wang, J.P., Liao, C.C., Han, Q.H., Bei, D.H., Ang, T.C., Jeng, M.C.

“…The capacitance density of industrial low-cost metal-insulator-metal (MIM) capacitor in Cu back-end-of-line (BEOL) technologies has been improved to 1.5…”
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A robust physical and predictive model for deep-submicrometer MOS circuit simulation by Huang, J.H., Liu, Z.H., Jeng, M.C., Ko, P.K., Hu, C.

“…An efficient physical and predictive model (the Berkeley short-channel insulated-gate FET model, or BSIM3) for deep-submicrometer MOSFETs is presented with…”
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Direct DC to RF Conversion by Picosecond Optoelectronic Switching by Chang, C.S., Jeng, M.C., Rhee, M.J., Lee, C.H., Rosen, A., Davis, H.

“…Conversion of dc energy to RF pulses has been demonstrated by picosecond optoelectronic switching in silicon. Sequential waveform of two and one half cycles…”
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