Search Results - "Jay Chey, S."
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A High-Efficiency Solution-Deposited Thin-Film Photovoltaic Device
Published in Advanced materials (Weinheim) (02-10-2008)“…High‐quality Cu(In,Ga)Se2 (CIGS) films are deposited from hydrazine‐based solutions and are employed as absorber layers in thin‐film photovoltaic devices. The…”
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12% Efficiency CuIn(Se,S)2 Photovoltaic Device Prepared Using a Hydrazine Solution Process
Published in Chemistry of materials (09-02-2010)“…Thin-film CuIn(Se,S)2 (i.e., CIS) absorbers have been solution-deposited using a hydrazine-based approach that offers the potential to significantly lower the…”
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Optimization of CIGS-Based PV Device through Antimony Doping
Published in Chemistry of materials (26-01-2010)Get full text
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Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4 absorber
Published in Progress in photovoltaics (01-01-2013)“…ABSTRACT Using vacuum process, we fabricated Cu2ZnSnS4 solar cells with 8.4% efficiency, a number independently certified by an external, accredited…”
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Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier
Published in Applied physics letters (30-07-2012)“…We have examined Cu2ZnSnSe4 (CZTSe) solar cells prepared by thermal co-evaporation on Mo-coated glass substrates followed by post-deposition annealing under Se…”
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Defects in Cu(In,Ga)Se2 Chalcopyrite Semiconductors: A Comparative Study of Material Properties, Defect States, and Photovoltaic Performance
Published in Advanced energy materials (01-10-2011)“…Understanding defects in Cu(In,Ga)(Se,S)2 (CIGS), especially correlating changes in the film formation process with differences in material properties,…”
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Hydrazine-based deposition route for device-quality CIGS films
Published in Thin solid films (02-02-2009)“…A simple solution-based approach for depositing CIGS (Cu–In–Ga–Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial…”
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Antimony assisted low-temperature processing of CuIn1-xGaxSe2-ySy solar cells
Published in Thin solid films (01-11-2010)Get full text
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Progress towards marketable earth-abundant chalcogenide solar cells
Published in Thin solid films (31-08-2011)“…Kesterite-related photovoltaic materials are considered a promising alternative to CdTe and Cu(In,Ga)(S,Se) 2 absorbers, primarily because they are not reliant…”
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Journal Article Conference Proceeding -
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Low-Voltage Transistor Employing a High-Mobility Spin-Coated Chalcogenide Semiconductor
Published in Advanced materials (Weinheim) (13-05-2005)“…In2Se3 thin films are spin‐coated using a hydrazinium‐precursor approach to yield thin‐film transistors (TFTs, see Figure). The highly toxic and explosive…”
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Defects in Chalcopyrite Semiconductors: Defects in Cu(In,Ga)Se2 Chalcopyrite Semiconductors: A Comparative Study of Material Properties, Defect States, and Photovoltaic Performance (Adv. Energy Mater. 5/2011)
Published in Advanced energy materials (01-10-2011)“…David Mitzi and co‐workers have studied defects in Cu(In,Ga)Se2 (CIGS), intentionally induced with controlled processing, with both material and device…”
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Metastable structures and critical thicknesses: Ag on Si(111)-7×7
Published in Surface science (19-10-1998)“…Scanning tunneling microscopy was used to investigate recrystallization of nonequilibrium thin films of Ag grown on Si(111)-7×7 at 50 K. At this temperature,…”
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Torwards marketable efficiency solution-processed kesterite and chalcopyrite photovoltaic devices
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01-06-2010)“…Although CuIn 1-x GaxSe 2-y S y (CIGS) chalcopyrite and Cu 2 ZnSn(S,Se) 4 (CZTSSe) kesterite-related films offer significant potential for low-cost…”
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Conference Proceeding -
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Surface morphology during multilayer epitaxial growth of Ge(001)
Published in Physical review letters (13-02-1995)“…The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds…”
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Buffer-Layer-Assisted Growth of Nanocrystals: Ag-Xe-Si(111)
Published in Physical review letters (04-05-1998)Get full text
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Defects in Cu(In,Ga)Se 2 Chalcopyrite Semiconductors: A Comparative Study of Material Properties, Defect States, and Photovoltaic Performance
Published in Advanced energy materials (01-10-2011)“…Understanding defects in Cu(In,Ga)(Se,S) 2 (CIGS), especially correlating changes in the film formation process with differences in material properties,…”
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Control of an interfacial MoSe 2 layer in Cu 2 ZnSnSe 4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier
Published in Applied physics letters (30-07-2012)Get full text
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Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy
Published in Surface science (01-02-1996)“…Scanning tunneling microscopy is used to characterize the surface of homoepitaxial GaAs(001) films deposited on GaAs(001) substrates miscut 0.2° towards [110]…”
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Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu 2 ZnSnS 4 absorber
Published in Progress in photovoltaics (01-01-2013)“…Using vacuum process, we fabricated Cu 2 ZnSnS 4 solar cells with 8.4% efficiency, a number independently certified by an external, accredited laboratory. This…”
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