Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor DC characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain curre...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 49; no. 8; pp. 1496 - 1498
Main Authors: Kuzmik, J., Javorka, R., Alam, A., Marso, M., Heuken, M., Kordos, P.
Format: Journal Article
Language:English
Published: New York IEEE 01-08-2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Aluminum compounds
Channels
Direct current
Dissipation
Gallium compounds
Gallium nitrides
High electron mobility transistors
Power MODFETs
Resistance
Sapphire
Semiconductor devices
Silicon
Silicon substrates
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Summary:Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor DC characterization methods. A negative differential output resistance is observed for high dissipated power levels. An analytical formula for a source-drain current drop as a function of parasitic source resistance and threshold voltage changes is proposed to explain this behavior. The transistor source resistance and threshold voltage is determined experimentally at different elevated temperatures to construct channel temperature versus dissipated power transfer characteristic. It is found that the HEMT channel temperature increases rapidly with dissipated power and at 6 W/mm reaches values of /spl sim/320/spl deg/C for sapphire and /spl sim/95/spl deg/C for silicon substrate, respectively.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2002.801430