Search Results - "Jaroszynska, Arianna"

Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction by Sochacki, Tomasz, Sakowski, Slawomir, Kempisty, Pawel, Amilusik, Mikolaj, Jaroszynska, Arianna, Iwinska, Malgorzata, Bockowski, Michal

“…•Lateral growth during bulk crystallization of GaN by HVPE was reduced.•Mo parts were introduced into the crystallization zone of the HVPE reactor.•The…”
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Lateral and vertical diffusion of magnesium in ion-implanted Halide Vapor Phase Epitaxy gallium nitride by Sierakowski, Kacper, Jaroszynska, Arianna, Jakiela, Rafal, Fijalkowski, Michal, Sochacki, Tomasz, Iwinska, Malgorzata, Turek, Marcin, Lorenz, Katharina, Bockowski, Michal

“…In the present study, the diffusion of magnesium in gallium nitride was investigated. In order to ensure high structural quality and purity of the analyzed…”
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On Morphology of Aluminum-Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants' Pressure and Ammonia Flow Rate by Jaroszynski, Piotr, Dabrowski, Michal, Sadovy, Petro, Bockowski, Michal, Czernecki, Robert, Sochacki, Tomasz

“…The focus of this study was the investigation of how the total pressure of reactants and ammonia flow rate influence the growth morphology of aluminum-gallium…”
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Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE by Sierakowski, Kacper, Jakiela, Rafal, Jaroszynska, Arianna, Fijalkowski, Michal, Sochacki, Tomasz, Iwinska, Malgorzata, Turek, Marcin, Uedono, Akira, Reshchikov, Michael A., Bockowski, Michal

“…This work presents the diffusion mechanism of zinc in gallium nitride. Halide vapor phase epitaxy layers were deposited on native ammonothermal seeds of three…”
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