Search Results - "Jaras̆iūnas, K"

Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures by Aleksiejūnas, R., Gelžinytė, K., Nargelas, S., Jarašiūnas, K., Vengris, M., Armour, E. A., Byrnes, D. P., Arif, R. A., Lee, S. M., Papasouliotis, G. D.

“…We report on diffusion-driven and excitation-dependent carrier recombination rate in multiple InGaN/GaN quantum wells by using photoluminescence, light-induced…”
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Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics by Nargelas, S., Mickevičius, J., Kadys, A., Jarašiūnas, K., Malinauskas, T.

“…•SE threshold increases with layer thickness despite reduction of defect density.•Photon dynamics is the main factor controlling SE threshold.•Carrier lifetime…”
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Features of free carrier and exciton recombination, diffusion, and photoluminescence in undoped and phosphorus-doped diamond layers by Ščajev, P., Jurkevičius, J., Mickevičius, J., Jarašiūnas, K., Kato, H.

“…We investigated carrier dynamics and photoluminescence in undoped and n-type phosphorus-doped diamond epilayers under interband picosecond-pulse…”
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Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique by Nargelas, S., Jarašiūnas, K., Bertulis, K., Pačebutas, V.

“…We applied a time-resolved transient grating technique for investigation of nonequilibrium carrier dynamics in GaAs 1 − x Bi x alloys with x = 0.025 - 0.063 …”
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Carrier dynamics in blue and green emitting InGaN MQWs by Aleksiejūnas, R., Nomeika, K., Miasojedovas, S., Nargelas, S., Malinauskas, T., Jarašiūnas, K., Tuna, Ö., Heuken, M.

“…Spectrally and spatially‐resolved nonlinear optical techniques were combined with the photoluminescence spectroscopy to study carrier dynamics and…”
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Carrier recombination and diffusivity in microcrystalline CVD-grown and single-crystalline HPHT diamonds by Ščajev, P., Gudelis, V., Jarašiūnas, K., Kisialiou, I., Ivakin, E., Nesládek, M., Haenen, K.

“…We report investigation of carrier recombination and diffusivity in bulk diamonds of different crystalline structure – microcrystalline (MC) CVD‐grown and…”
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Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures by Nomeika, K., Aleksiejūnas, R., Miasojedovas, S., Tomašiūnas, R., Jarašiūnas, K., Pietzonka, I., Strassburg, M., Lugauer, H.-J.

“…Localization of charge carriers is of crucial importance in InGaN light emitting devices since it governs carrier transport and ensures high radiative…”
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Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers by Ščajev, P., Nargelas, S., Jarašiūnas, K., Kisialiou, I., Ivakin, E., Deferme, W., D'Haen, J., Haenen, K.

“…Carrier dynamics under interband carrier injection conditions (213 nm) was studied in undoped and boron‐doped microcrystalline diamond layers with different…”
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Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques by Malinauskas, T., Jarašiūnas, K., Miasojedovas, S., Juršėnas, S., Beaumont, B., Gibart, P.

“…Optical monitoring of nonequilibrium carrier dynamics was performed in freestanding GaN. Four-wave mixing kinetics directly provided carrier lifetime of 5.4ns…”
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Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light-induced transient grating technique by Malinauskas, T., Jarašiūnas, K., Ivakin, E., Tranchant, N., Nesladek, M.

“…We report on a contactless, all‐optical study of carrier diffusion and recombination kinetics in single‐crystalline diamond layers using the light‐induced…”
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All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN by Malinauskas, T., Aleksiejūnas, R., Jarašiūnas, K., Beaumont, B., Gibart, P., Kakanakova-Georgieva, A., Janzen, E., Gogova, D., Monemar, B., Heuken, M.

“…The metrological capability of the picosecond four-wave mixing (FWM) technique for evaluation of the photoelectrical properties of GaN heterostructures grown…”
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Anisotropy of free-carrier absorption and diffusivity in m-plane GaN by Ščajev, P., Jarašiūnas, K., Özgür, Ü., Morkoç, H., Leach, J., Paskova, T.

“…Polarization-dependent free-carrier absorption (FCA) in bulk m-plane GaN at 1053nm revealed approximately 6 times stronger hole-related absorption for E⊥c than…”
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Dynamics of free carrier absorption in InN layers by Nargelas, S., Aleksiejūnas, R., Vengris, M., Malinauskas, T., Jarašiūnas, K., Dimakis, E.

“…Carrier dynamics in highly excited InN epitaxial layers was investigated in the 1550-2440 nm (0.8-0.51 eV) spectral range by using a femtosecond differential…”
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Optical monitoring of nonequilibrium carrier diffusion in single crystalline CVD and HPHT diamonds under high optical excitation by Ščajev, P., Malinauskas, T., Lubys, L., Ivakin, E., Nesladek, M., Haenen, K., Jarašiūnas, K.

“…We report on a novel approach for the contactless, all‐optical study of ambipolar carrier diffusion in single‐crystalline diamond layers. Using interband…”
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Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers by Aleksiejūnas, R., Sūdžius, M., Malinauskas, T., Vaitkus, J., Jarašiūnas, K., Sakai, S.

“…Time-resolved nondegenerate four-wave mixing experiments were performed on 2.6-μm-thick GaN epilayers grown by metalorganic chemical-vapor deposition using…”
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Optical evaluation of carrier lifetime and diffusion length in synthetic diamonds by Malinauskas, T., Jarasiunas, K., Ivakin, E., Ralchenko, V., Gontar, A., Ivakhnenko, S.

“…The key electronic parameters of high-pressure-high-temperature and chemical-vapor-deposition grown diamonds have been determined at interband ( hν = 5.82 eV)…”
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Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions by Li, X., Okur, S., Zhang, F., Hafiz, S. A., Avrutin, V., Özgür, Ü., Morkoç, H., Jarašiūnas, K.

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Carrier dynamics in coalescence overgrowth of GaN nanocolumns by Wang, Hsiang-Chen, Tang, Tsung-Yi, Yang, C.C., Malinauskas, T., Jarasiunas, K.

“…Coalescence overgrowth of pattern-grown GaN nanocolumns on c-plane sapphire substrate with metal organic chemical vapor deposition is demonstrated. The…”
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Optical and electron beam studies of carrier transport in quasibulk GaN by Lin, Y., Flitsyian, E., Chernyak, L., Malinauskas, T., Aleksiejunas, R., Jarasiunas, K., Lim, W., Pearton, S. J., Gartsman, K.

“…Variable temperature light-induced transient grating technique combined with electron beam-induced current measurements in situ in a scanning electron…”
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GaAs peculiarities related with inhomogeneities and the methods for reveal of their properties by Vaitkus, J, Baubinas, R, Gaubas, E, Jaras̆iūnas, K, Jašinskaite, R, Kažukauskas, V, Kuprusevičius, E, Matukas, J, Palenskis, V, Storasta, J, Sūdz̆ius, M, Tomašiūnas, R

“…The inhomogeneities in as-grown and irradiated GaAs crystals and structures, their properties and role have been analysed. The influence of inhomogeneities on…”
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