Search Results - "Jaoul, Mathieu"

A Compact Formulation for Avalanche Multiplication in SiGe HBTs at High Injection Levels by Jaoul, Mathieu, Maneux, Cristell, Celi, Didier, Schroter, Michael, Zimmer, Thomas

“…This paper presents a unified physical formulation for the avalanche effect in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) at different…”
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Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs by Couret, Marine, Jaoul, Mathieu, Marc, François, Mukherjee, Chhandak, Céli, Didier, Zimmer, Thomas, Maneux, Cristell

“…This paper presents a physics-based scalable formulation for interface trap generation in the vicinity of the emitter-base spacer oxide interface in advanced…”
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Analysis of a failure mechanism occurring in SiGe HBTs under mixed-mode stress conditions by Jaoul, Mathieu, Ney, David, Celi, Didier, Maneux, Cristell, Zimmer, Thomas

“…This paper presents an investigation of hot carrier degradation in advanced SiGe HBTs. This failure mechanism is observed under mixed mode stress conditions…”
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Analysis of Test Structure Design Induced Variation in on Si On-wafer TRL Calibration in sub-THz by Yadav, Chandan, Fregonese, Sebastien, Deng, Marina, Cabbia, Marco, De Matos, Magali, Jaoul, Mathieu, Zimmer, Thomas

“…In this paper, we present on-wafer S-parameter measurement of test structures designed and fabricated on silicon substrate for transistor de-embedding upto 220…”
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Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo by Jaoul, Mathieu, Celi, Didier, Maneux, Cristell, Schroter, Michael, Pawlak, Andreas

“…The cut-off frequencies of silicon-germanium hetero-junction bipolar transistors (SiGe HBTs) have entered the THz range at the cost of high current density and…”
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Measurement based accurate definition of the SOA edges for SiGe HBTs by Jaoul, Mathieu, Celi, Didier, Maneux, Cristell, Zimmer, Thomas

“…This paper presents a non-destructive method to characterize the SiGe HBTs (heterojunction bipolar transistors) at very high currents/voltages, close to the…”
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