Search Results - "Jang, Soohwan"

Refine Results
  1. 1

    High Breakdown Voltage (−201) \beta -Ga2O3 Schottky Rectifiers by Jiancheng Yang, Shihyun Ahn, Ren, F., Pearton, S. J., Soohwan Jang, Kuramata, A.

    Published in IEEE electron device letters (01-07-2017)
    “…β-Ga 2 O 3 Schottky barrier diodes were fabricated in a vertical geometry structure consisting of Ni/Au rectifying contacts without edge termination on…”
    Get full text
    Journal Article
  2. 2

    Platinum-functionalized black phosphorus hydrogen sensors by Lee, Geonyeop, Jung, Sunwoo, Jang, Soohwan, Kim, Jihyun

    Published in Applied physics letters (12-06-2017)
    “…Black phosphorus (BP), especially in its two-dimensional (2D) form, is an intriguing material because it exhibits higher chemical sensing ability as compared…”
    Get full text
    Journal Article
  3. 3

    High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 by Yang, Jiancheng, Ahn, Shihyun, Ren, F., Pearton, S. J., Jang, Soohwan, Kim, Jihyun, Kuramata, A.

    Published in Applied physics letters (08-05-2017)
    “…Vertical geometry Ni/Au-β-Ga2O3 Schottky rectifiers were fabricated on Hydride Vapor Phase Epitaxy layers on conducting bulk substrates, and the rectifying…”
    Get full text
    Journal Article
  4. 4

    Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer by Jang, Soohwan, Jung, Sunwoo, Baik, Kwang Hyeon

    Published in Sensors (Basel, Switzerland) (04-02-2020)
    “…Enhanced hydrogen sensing performance of Pt Schottky diodes on ZnO single crystal wafers in humid ambient conditions is reported using a polymethylmethacrylate…”
    Get full text
    Journal Article
  5. 5

    Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer by Sunwoo Jung, Kwang Hyeon Baik, Fan Ren, Pearton, Stephen J., Soohwan Jang

    Published in IEEE electron device letters (01-05-2017)
    “…One of the biggest issues with GaN-based hydrogen sensors is their sensitivity to humidity in the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN…”
    Get full text
    Journal Article
  6. 6
  7. 7

    Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures by Yang, Jiancheng, Carey, Patrick, Ren, Fan, Wang, Yu-Lin, Good, Michael L., Jang, Soohwan, Mastro, Michael A., Pearton, S. J.

    Published in Applied physics letters (13-11-2017)
    “…We report a comparison of two different approaches to detecting cardiac troponin I (cTnI) using antibody-functionalized AlGaN/GaN High Electron Mobility…”
    Get full text
    Journal Article
  8. 8

    Valence and conduction band offsets in AZO/Ga2O3 heterostructures by Carey, Patrick H., Ren, F., Hays, David C., Gila, B.P., Pearton, S.J., Jang, Soohwan, Kuramata, Akito

    Published in Vacuum (01-07-2017)
    “…We report on the determination of band offsets in rf-sputtered Aluminum Zinc Oxide (AZO)/single crystal β-Ga2O3 (AZO/Ga2O3) heterostructures using X-Ray…”
    Get full text
    Journal Article
  9. 9

    Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers by Yang, Gwangseok, Kim, Hong-Yeol, Jang, Soohwan, Kim, Jihyun

    Published in ACS applied materials & interfaces (12-10-2016)
    “…Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial…”
    Get full text
    Journal Article
  10. 10

    Hydrogen sensing characteristics of semipolar (112¯2) GaN Schottky diodes by Hyeon Baik, Kwang, Kim, Hyonwoong, Lee, Sung-Nam, Lim, Eunju, Pearton, S. J., Ren, F., Jang, Soohwan

    Published in Applied physics letters (17-02-2014)
    “…The hydrogen detection characteristics of semipolar (112¯2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar…”
    Get full text
    Journal Article
  11. 11

    Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN film by Baik, Kwang Hyeon, Kim, Hyonwoong, Jang, Soohwan

    Published in Thin solid films (31-10-2014)
    “…Nonpolar a-plane ZnO (a-ZnO) films with good crystalline quality have been achieved by a hydrothermal growth method on nonpolar a-plane GaN (a-GaN) films…”
    Get full text
    Journal Article
  12. 12

    Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing by Sunwoo Jung, Kwang Hyeon Baik, Fan Ren, Pearton, Stephen J., Soohwan Jang

    Published in IEEE sensors journal (15-09-2017)
    “…Polydimethylglutarimide (PMGI), a photosensitive positive type resin used in photoresists, is shown to be an effective moisture barrier for mitigating the…”
    Get full text
    Journal Article
  13. 13

    Schottky contact on hydrothermally grown a-plane ZnO for hydrogen sensing and UV detection by Kim, Jimin, Baik, Kwang Hyeon, Jang, Soohwan

    Published in Current applied physics (01-03-2016)
    “…Pt Schottky contact on nonpolar a-plane ZnO film grown by a simple hydrothermal method on a-plane GaN was investigated. The Schottky barrier height was…”
    Get full text
    Journal Article
  14. 14

    Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au by Carey, Patrick H., Yang, Jiancheng, Ren, F., Hays, David C., Pearton, S. J., Jang, Soohwan, Kuramata, Akito, Kravchenko, Ivan I.

    Published in AIP advances (01-09-2017)
    “…AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0 ° C. Without the presence of…”
    Get full text
    Journal Article
  15. 15

    Anisotropic electrical conductivity of surface-roughened semipolar GaN films by photochemical etching by Jang, Soohwan, Lee, Sohyun, Baik, Kwang Hyeon

    Published in Japanese Journal of Applied Physics (01-05-2017)
    “…We studied the anisotropy of electrical conductivity in surface-roughened semipolar GaN (s-GaN) films. Highly crystalline s-GaN films were obtained using…”
    Get full text
    Journal Article
  16. 16
  17. 17

    AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress by Douglas, E.A., Chang, C.Y., Cheney, D.J., Gila, B.P., Lo, C.F., Lu, Liu, Holzworth, R., Whiting, P., Jones, K., Via, G.D., Kim, Jinhyung, Jang, Soohwan, Ren, Fan, Pearton, S.J.

    Published in Microelectronics and reliability (01-02-2011)
    “…AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been step-stressed under both on- and off-state conditions. On-state, high…”
    Get full text
    Journal Article Conference Proceeding
  18. 18

    Suspended black phosphorus nanosheet gas sensors by Lee, Geonyeop, Kim, Suhyun, Jung, Sunwoo, Jang, Soohwan, Kim, Jihyun

    Published in Sensors and actuators. B, Chemical (01-10-2017)
    “…[Display omitted] •We demonstrated the suspended 2D black phosphorus gas sensors with superior sensing performance.•Suspended 2D structure has a high…”
    Get full text
    Journal Article
  19. 19

    Improved Organic Light Emitting Diodes Using Cryogenic LiF/Al Deposition by Chu, Byung-hwan, Chin, Byung Doo, Baik, Kwang Hyeon, Pearton, Stephen J, Ren, Fan, Jang, Soohwan

    Published in Japanese Journal of Applied Physics (01-09-2012)
    “…The effect of cryogenic temperature deposition of Al and LiF contacts on the electrical and optical performance of organic light emitting diodes (OLEDs) was…”
    Get full text
    Journal Article
  20. 20