Search Results - "Jang, S.L"

Simulated soil organic carbon stocks in northern China’s cropland under different climate change scenarios by Jia, H.X., Wang, X., Xiao, J.J., Jang, S.L., Li, J., Zhao, Y.F., Ye, W.L.

“…•The study predicated the influence of future climate change scenarios on SOC stock in oasis land.•DNDC model can be applied in Chinese northern arid basin by…”
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Formation of polycrystalline-Si thin-film transistors with tunneling field-effect-transistor structure by Juang, Miin-Horng, Hu, P.-S., Jang, S.L.

“…The formation of a poly-Si thin-film transistor (TFT) device with a tunneling field-effect-transistor (TFET) structure has been studied. With scaling the gate…”
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Study of ultra-shallow p +n junctions formed by excimer laser annealing by Juang, Miin-Horng, Lu, C.N., Jang, S.L., Cheng, H.C.

“…Excellent ultra-shallow p +n junctions have been formed by thermally treating the BF 2 +-implanted Si samples by excimer laser annealing (ELA) at 300–400 mJ cm…”
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Experimental evaluation of hot electron reliability on differential Clapp-VCO by Jang, S.L., Yuan, J.S., Yen, S.D., Kritchanchai, E., Huang, G.W.

“…This paper studies the hot-carrier stressed property of a series-tuned all-n core voltage controlled oscillator (VCO). A differential Clapp-VCO has been…”
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Formation of Mo gate electrode with adjustable work function on thin Ta 2O 5 high- k dielectric films by Juang, M.H., Lin, T.Y., Jang, S.L.

“…Formation of Mo gate electrode with adjustable work function on thin Ta 2O 5 high- k dielectric films at low-temperature processing of 600 °C has been studied…”
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Submicron-meter polycrystalline-SiGe thin-film transistors with tunneling field-effect-transistor structure by Juang, M.H., Peng, Y.S., Wang, J.L., Shye, D.C., Hwang, C.C., Jang, S.L.

“…Submicron-meter polycrystalline-SiGe thin-film transistor (TFT) device with tunneling field-effect-transistor (TFET) structure has been studied. With scaling…”
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Study of polycrystalline-Si thin-film transistors with different channel layer thickness at low bias voltage by Juang, Miin-Horng, Chang, C.W., Wang, J.L., Shye, D.C., Hwang, C.C., Jang, S.L.

“…A sub-micron poly-Si TFT device, operating at a drain bias of 1.5 V, has been studied with respect to channel layer thickness. A thinner channel layer may lead…”
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The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacer by Juang, Miin-Horng, Huang, C.W., Chang, C.W., Shye, D.C., Hwang, C.C., Wang, J.L., Jang, S.L.

“…Formation of poly-Si thin-film transistor (TFT) by large-angle-tilt-implantation of dopant through gate sidewall spacer (LATITS) has been proposed. By this…”
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Formation of 30-V power DMOSFET’s by implementing p-counter-doped region within n-type drift layer by Juang, Miin-Horng, Hwang, C.C., Shye, D.C., Wang, J.L., Jang, S.L.

“…Formation of 30-V power DMOSFET device by implementing p-counter-doped region within n-drift layer has been proposed. The implementation of p-counter-doped…”
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Formation of sub-micrometer polycrystalline-SiGe thin-film transistors by using a thinned channel layer by Juang, Miin-Horng, Chang, C.W., Huang, C.W., Wang, J.L., Shye, D.C., Hwang, C.C., Jang, S.L.

“…A sub-micron poly-SiGe TFT device, operating at a drain bias of 1.5 V, is proposed by using a thinned channel layer. A thinner channel layer may lead to better…”
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Formation of Mo gate electrode with adjustable work function on thin Ta2O5 high-k dielectric films by JUANG, M. H, LIN, T. Y, JANG, S. L

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Fabrication of trench-gate power MOSFETs by using a dual doped body region by Juang, M.H., Chen, W.T., Ou-Yang, C.I., Jang, S.L., Lin, M.J., Cheng, H.C.

“…Fabrication of trench-gate power MOSFETs by using a dual doped body region has been proposed to further improve the device performance. For the usual scheme…”
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A design consideration of channel doping profile for sub-0.12 μm partially depleted SOI n-MOSFET's by Juang, M.H, Ou-Yang, C.I, Jang, S.L

“…A device scheme for designing sub-0.12 μm partially depleted silicon-on-insulator (SOI) n-MOSFET's has been examined with respect to the channel dopant…”
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An analytical high frequency noise model for hot-carrier stressed MOSFETs by Heng-Fa Teng, Jang, S.L.

“…This paper proposes a hot-carrier stressed high frequency noise model for MOSFETs. By analytical method, a new fresh and post-stress high-frequency MOSFET…”
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