Search Results - "Jang, Kyungsoo"
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Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors
Published in Applied physics letters (25-02-2013)“…Stability of negative bias temperature stress (NBTS) of nitrogen doped amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is investigated. Undoped a-IGZO…”
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Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors
Published in Materials (29-05-2019)“…We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si1−xGex) thin film and thin-film transistor (TFT). The…”
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Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2 Treated Al2O3 Tunneling Layer: A Cost-Effective Method
Published in IEEE electron device letters (01-10-2016)“…An experiential aspect regarding the improvement of retention characteristics of InSnZnO (ITZO) thin-film transistor-based nonvolatile memory (TFT-NVM) devices…”
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Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs
Published in IEEE electron device letters (01-07-2014)“…Effect of short-channel induced instabilities in InSnZnO-based thin-film transistors (TFTs) caused by combination of the drain induced barrier lowering (DIBL)…”
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Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors
Published in IEEE electron device letters (01-09-2013)“…We report the effects of carrier concentration (NCH), indium (In) content, and crystallinity (X c ) on the electrical properties of indium-tin-zinc-oxide…”
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Improvement of Electrical Performance in P-Channel LTPS Thin-Film Transistor with a-Si:H Surface Passivation
Published in Materials (07-01-2019)“…We report the effects of surface passivation by depositing a hydrogenated amorphous silicon (a-Si:H) layer on the electrical characteristics of low temperature…”
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Enhancement of electrical stability of a-IGZO TFTs by improving the surface morphology and packing density of active channel
Published in Current applied physics (01-01-2013)“…a-IGZO films were deposited on Si substrates by d.c sputtering technique with various working power densities (pd) in the range of 0.74–2.22 W/cm2. The…”
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Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer
Published in Applied physics letters (19-01-2015)“…Extensive attention on high-definition flat panel displays is the driving force to fabricate high-performance thin-film transistors (TFTs). A hybrid oxide TFTs…”
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A numerical study for the optimal arrangement of ocean current turbine generators in the ocean current power parks
Published in Current applied physics (01-03-2010)“…The present paper deals with the investigation of the flow distribution in the ocean current power park in order to optimize the arrangement of the turbine…”
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Electrical mechanism analysis of Al2O3 doped zinc oxide thin films deposited by rotating cylindrical DC magnetron sputtering
Published in Thin solid films (01-08-2011)“…Cost efficient and large area deposition of superior quality Al2O3 doped zinc oxide (AZO) films is instrumental in many of its applications, including solar…”
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Conference Proceeding Journal Article -
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Characterization of MONOS nonvolatile memory by solid phase crystallization on glass
Published in Surface & coatings technology (30-08-2008)“…Solid phase crystallization (SPC) is carried out because of the best uniformity among the various crystallization methods. SPC poly-Si nonvolatile memory (NVM)…”
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Journal Article Conference Proceeding -
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Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si 1-x Ge x Thin-Film Transistors
Published in Materials (29-05-2019)“…We investigated the characteristics of excimer laser-annealed polycrystalline silicon-germanium (poly-Si Ge ) thin film and thin-film transistor (TFT). The Ge…”
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Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region
Published in Applied surface science (28-02-2017)“…[Display omitted] •The characteristics of thin film transistors using double active layers are examined.•Electrical characteristics have been improved for the…”
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Aging effects on the stability of nitrogen-doped and un-doped InGaZnO thin-film transistors
Published in Materials science in semiconductor processing (01-09-2015)“…The long-term electrical reliability/stability measurements, including negative bias stress and aging over 10 months of nitrogen-doped (N-doped) and un-doped…”
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Role of SiO sub(x)N sub(y) surface passivation layer on stability improvement and kink effect reduction of ELA poly silicon thin film transistors
Published in Microelectronic engineering (01-10-2016)“…The role of SiO sub(x)N sub(y) thin layer growth on excimer laser annealed (ELA) polysilicon, by N sub(2)O plasma treatment, on the stability improvement under…”
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Improved Data Retention of InSnZnO Nonvolatile Memory by H 2 O 2 Treated Al 2 O 3 Tunneling Layer: A Cost-Effective Method
Published in IEEE electron device letters (01-10-2016)Get full text
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Role of Schottky barrier height at source/drain contact for electrical improvement in high carrier concentration amorphous InGaZnO thin film transistors
Published in Materials science in semiconductor processing (01-10-2015)“…We report the fabrication of bottom-gate thin film transistors (TFTs) at various carrier concentrations of an amorphous InGaZnO (a-IGZO) active layer from…”
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Role of SiOxNy surface passivation layer on stability improvement and kink effect reduction of ELA poly silicon thin film transistors
Published in Microelectronic engineering (01-10-2016)“…The role of SiOxNy thin layer growth on excimer laser annealed (ELA) polysilicon, by N2O plasma treatment, on the stability improvement under prolonged…”
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Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices
Published in Thin solid films (15-03-2013)“…We report the effect of silver (Ag)-buffer layer Indium-Tin-Oxide (ITO) film on a polyethylene terephthalate substrate on the electrical, optical and reliable…”
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