ZnO-based resistive memory with self-rectifying behavior for neuromorphic devices

[Display omitted] •ZnO-based resistive memory with self-rectifying behavior is proposed for neuromorphic devices.•Semiconductor-like ITO layer is introduced for switching model.•Self-rectifying mechanisms are proposed using energy band diagram.•Synaptic learning behaviors are emulated for bio-inspir...

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Bibliographic Details
Published in:	Applied surface science Vol. 671; p. 160749
Main Authors:	Na, Hyesung, So, Hyojin, Jang, Heesung, Park, Jihee, Kim, Sungjun
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 30-10-2024
Online Access:	Get full text
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Summary:	[Display omitted] •ZnO-based resistive memory with self-rectifying behavior is proposed for neuromorphic devices.•Semiconductor-like ITO layer is introduced for switching model.•Self-rectifying mechanisms are proposed using energy band diagram.•Synaptic learning behaviors are emulated for bio-inspired computing.•Neuromorphic system is performed using memristor device. Resistive random-access memory (RRAM) is a type of next-generation low-energy memory used in artificial intelligence by controlling the high- and low-resistance states. By the migration of oxygen vacancies, two states are controlled. ITO/ZnO/TaN is proposed as a nonvolatile memory RRAM device. Additionally, the interface layer between the ITO and ZnO layer is shown by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), which results in rectifying characteristics. The device exhibits bipolar resistive switching and a gradual I-V curve through DC voltage sweep cycling after the electroforming procedure, implying the potential for neuromorphic systems. Furthermore, the device’s synaptic behaviors are proved, including potentiation and depression, spike-amplitude-dependent plasticity, spike-number-dependent plasticity, spike-duration-dependent plasticity, and spike-timing-dependent plasticity suitability. Furthermore, ISPVA was utilized for better endurance, potentiation and depression, and MLC retention.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2024.160749