Search Results - "Jana, Sanjay K."

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors by Ghosh, Saptarsi, Dinara, Syed Mukulika, Mukhopadhyay, Partha, Jana, Sanjay K., Bag, Ankush, Chakraborty, Apurba, Chang, Edward Yi, kabi, Sanjib, Biswas, Dhrubes

“…Current transient analysis combined with response to pulsed bias drives have been used to explore the possibilities of threading dislocations affecting the…”
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An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs by Ghosh, Saptarsi, Bag, Ankush, Jana, Sanjay K., Mukhopadhyay, Partha, Dinara, Syed Mukulika, Kabi, Sanjib, Biswas, Dhrubes

“…•A physics based analytical model for GaN/AlGaN MISHEMTs is proposed.•The model is applicable for all of the cubic, Ga-polar, and N-polar topologies.•A…”
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Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening by Bag, Ankush, Kumar, Rahul, Mukhopadhyay, Partha, Mahata, Mihir K., Chakraborty, Apurba, Ghosh, Saptarsi, Jana, Sanjay K., Biswas, Dhrubes

“…In-situ RHEED and ex-situ AFM characterizations have been employed to investigate transformations of surface topography with the thickness of PAMBE grown AlGaN…”
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Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure by Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Jana, Sanjay K., Dinara, Syed Mukulika, Bag, Ankush, Mahata, Mihir K., Kumar, Rahul, Das, Subhashis, Das, Palash, Biswas, Dhrubes

“…The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to…”
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Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure by Chakraborty, Apurba, Ghosh, Saptarsi, Mukhopadhyay, Partha, Jana, Sanjay K., Dinara, Syed Mukulika, Bag, Ankush, Mahata, Mihir K., Kumar, Rahul, Das, Subhashis, Das, Palash, Biswas, Dhrubes

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