Search Results - "Jammy, Rajarao"

Gate stack technology for nanoscale devices by Lee, Byoung Hun, Oh, Jungwoo, Tseng, Hsing Huang, Jammy, Rajarao, Huff, Howard

“…Scaling of the gate stack has been a key to enhancing the performance of complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) of past…”
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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k /Metal Gates CMOS FinFETs for Multi- V Th Engineering by Hussain, Muhammad Mustafa, Smith, Casey E, Harris, HRusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

“…Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high- k /metal gates CMOS FinFETs was demonstrated to…”
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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi-VTh Engineering by MUHAMMAD MUSTAFA HUSSAIN, SMITH, Casey E, RUSTY HARRIS, H, YOUNG, Chadwin D, TSENG, Hsing-Huang, JAMMY, Rajarao

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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-k/Metal Gates CMOS FinFETs for Multi- V rmTh Engineering by Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

“…Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve…”
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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High-[Formula Omitted]/Metal Gates CMOS FinFETs for Multi- [Formula Omitted] Engineering by Hussain, Muhammad Mustafa, Smith, Casey E, Harris, H. Rusty, Young, Chadwin D, Tseng, Hsing-Huang, Jammy, Rajarao

“…Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-[Formula Omitted]/metal gates CMOS FinFETs was…”
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Gate-First Integration of Tunable Work Function Metal Gates of Different Thicknesses Into High- k/Metal Gates CMOS FinFETs for Multi- V Engineering by Hussain, M.M., Smith, C.E., Harris, H.R., Young, C.D., Hsing-Huang Tseng, Jammy, R.

“…Gate-first integration of tunable work function metal gates of different thicknesses (3-20 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve…”
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Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation by Wei-Yip Loh, Etienne, H., Coss, B., Ok, I., Turnbaugh, D., Spiegel, Y., Torregrosa, F., Banti, J., Roux, L., Pui-Yee Hung, Jungwoo Oh, Sassman, B., Radar, K., Majhi, P., Hsing-Huang Tseng, Jammy, R.

“…Using a presilicide implantation approach, we demonstrate that the Schottky barrier height (SBH) of NiSi/n-Si(100) can be modulated by doping a Si substrate…”
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Growth and characterization of novel perovskite and related oxides for device applications by Jammy, Rajarao

“…The synthesis and characterization of three distinct perovskite systems were investigated in this work. This effort was aimed towards bringing electroceramics…”
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CVD rhenium and PVD tantalum gate MOSFETs fabricated with a replacement technique by Pan, J., Canaperi, D., Jammy, R., Steen, M., Pellerin, J., Ming-Ren Lin

“…This letter reports the first replacement metal gate MOSFETs with chemical vapor deposition (CVD) Rhenium (Re), and physical vapor deposition (PVD) Tantalum…”
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Photo-enhanced negative differential resistance and photo-accelerated time-dependent dielectric breakdown in thin nitride-oxide dielectric film by Chen, Fen, Li, Baozhen, Jammy, Rajarao, Dufresne, Roger A., Strong, Alvin W.

“…Photo-enhanced negative differential resistance (NDR) and photo-accelerated time-dependent dielectric breakdown (TDDB) were observed in thin nitride–oxide…”
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Simultaneous optimization of short-channel effects and junction capacitance in pMOSFET using large-angle-tilt-implantation of nitrogen (LATIN) by Kilho Lee, Murthy, C., Rengarajan, R., Hegde, S., Jammy, R.

“…A widely used halo implant process of counter doping has a tradeoff between the short channel effects and the parasitic junction capacitance. We propose a…”
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Growth and characterization of novel perovskite and related oxides for device applications by Jammy, Rajarao

“…The synthesis and characterization of three distinct perovskite systems were investigated in this work. This effort was aimed towards bringing electroceramics…”
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High frequency electrical characterization of bst capacitors by Jammy, Rajmo, Wills, Laura A.

“…We have characterized the dielectric properties of barium strontium titanate (Ba 1-x Sr x TiO 3 , x=0.5; BST) capacitors up to 5 GHz employing a simple, single…”
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Gate stack technology for nanoscale devices by Byoung Hun Lee, Kirsch, P., Seungchul Song, Rino Choi, Jammy, R.

“…The historical evolution of gate stack technology for silicon devices is reviewed to provide insight on the challenges in this technology for scaled nanoscale…”
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High Performing pMOSFETs on Si(110) for Application to Hybrid Orientation Technologies -- Comparison of HfO2 and HfSiON by Krishnan, S.A., Rusty Harris, H., Kirsch, P.D., Krug, C., Quevedo-Lopez, C., Young, C., Byoung Hun Lee, Choi, R., Chowdhury, N., Suthram, S., Thompson, S., Bersuker, G., Jammy, R.

“…A comprehensive study implementing a high-k/metal gate stack on Si(110) substrates has been performed, including a comparison of HfO 2 and HfSiON, and…”
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Reliability of La-Doped Hf-Based Dielectrics nMOSFETs by Chang Yong Kang, Kirsch, P.D., Byoung Hun Lee, Hsing-Huang Tseng, Jammy, R.

“…In this paper, the reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. The HfON with La demonstrated higher breakdown…”
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