Search Results - "Jamieson, D.N"

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  1. 1

    The Raman spectrum of nanocrystalline diamond by Prawer, S, Nugent, K.W, Jamieson, D.N, Orwa, J.O, Bursill, L.A, Peng, J.L

    Published in Chemical physics letters (15-12-2000)
    “…Nanometre sized diamond powder has been purified by centrifugation to remove contamination from sp 2 bonded carbon. The purified powder has been characterized…”
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    Journal Article
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    Creating diamond color centers for quantum optical applications by Waldermann, F.C., Olivero, P., Nunn, J., Surmacz, K., Wang, Z.Y., Jaksch, D., Taylor, R.A., Walmsley, I.A., Draganski, M., Reichart, P., Greentree, A.D., Jamieson, D.N., Prawer, S.

    Published in Diamond and related materials (01-11-2007)
    “…Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure…”
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  3. 3

    Characterization of three-dimensional microstructures in single-crystal diamond by Olivero, P., Rubanov, S., Reichart, P., Gibson, B.C., Huntington, S.T., Rabeau, J.R., Greentree, Andrew D., Salzman, J., Moore, D., Jamieson, D.N., Prawer, S.

    Published in Diamond and related materials (01-10-2006)
    “…We report on the Raman and photoluminescence characterization of three-dimensional microstructures fabricated in single crystal diamond with a Focused Ion Beam…”
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    Low-Noise Detection System for the Counted Implantation of Single Ions in Silicon by Gauja, E., Dzurak, A.S., Andresen, S.E., Hopf, C.Y.T., Jamieson, D.N., Hearne, S.M.

    Published in IEEE transactions on nuclear science (01-04-2008)
    “…A unique detection system has been developed which allows for the counted implantation of individual low-energy heavy ions into silicon. This system can ensure…”
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    Journal Article
  6. 6

    Optical properties of silver composite metamaterials by Orbons, S.M., Freeman, D., Luther-Davies, B., Gibson, B.C., Huntington, S.T., Jamieson, D.N., Roberts, A.

    Published in Physica. B, Condensed matter (15-05-2007)
    “…We present a computational and experimental study investigating the optical properties of nanoscale silver composite metamaterials fabricated by ion beam…”
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    Journal Article Conference Proceeding
  7. 7

    The Leipzig high-energy ion nanoprobe: A report on first results by Butz, T., Flagmeyer, R.-H., Heitmann, J., Jamieson, D.N., Legge, G.J.F., Lehmann, D., Reibetanz, U., Reinert, T., Saint, A., Spemann, D., Szymanski, R., Tröger, W., Vogt, J., Zhu, J.

    “…The high-energy ion nanoprobe LIPSION at the University of Leipzig has been operational since October 1998. Its magnetic quadrupole lens system, arranged as a…”
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    Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation by Uzan-Saguy, C., Kalish, R., Walker, R., Jamieson, D.N., Prawer, S.

    Published in Diamond and related materials (01-10-1998)
    “…The electrical properties of a deeply buried, boron-doped layer in type IIa diamond are reported. The layer is fabricated using mega-electron-volt (MeV) B-ion…”
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  9. 9

    High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector by Robson, S.G., Jakob, A.M., Holmes, D., Lim, S.Q., Johnson, B.C., Jamieson, D.N.

    “…Rutherford Backscattering Spectrometry (RBS) is a powerful ion beam analysis technique in frequent use within materials science. The recent emergence of…”
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    Journal Article
  10. 10

    Scanning ion deep level transient spectroscopy by Laird, J.S, Bardos, R.A, Jagadish, C, Jamieson, D.N, Legge, G.J.F

    “…We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The…”
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    Journal Article
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    Electrical conduction in polycrystalline diamond and the effects of UV irradiation by Gonon, P., Prawer, S., Boiko, Y., Jamieson, D.N.

    Published in Diamond and related materials (01-04-1997)
    “…Two band-gap states are identified in polycrystalline diamond films; a level at about 1.1 eV (density of 10 17 cm −3, probably an acceptor state) and a trap…”
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    Journal Article
  13. 13

    Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20 - keV ions by Jamieson, D. N., Yang, C., Hopf, T., Hearne, S. M., Pakes, C. I., Prawer, S., Mitic, M., Gauja, E., Andresen, S. E., Hudson, F. E., Dzurak, A. S., Clark, R. G.

    Published in Applied physics letters (16-05-2005)
    “…We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub- 20 - keV . The method is based on the…”
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    Journal Article
  14. 14

    Radiation hardness of polycrystalline diamond by Gonon, P., Prawer, S., Jamieson, D.N., Nugent, K.W.

    Published in Diamond and related materials (1997)
    “…Undoped and B-doped polycrystalline diamond films have been irradiated with 2-MeV alpha particles and 3-MeV protons at doses ranging from D=10 12 to D=10 17cm…”
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    Journal Article
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    Modeling of ion beam induced charge sharing experiments for the design of high resolution position sensitive detectors by Forneris, J., Jamieson, D.N., Giacomini, G., Yang, C., Vittone, E.

    “…In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active…”
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    Journal Article
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    Mapping ion beam induced current changes in a commercial MOSFET by Alves, A.D.C., Thompson, S., Yang, C., Jamieson, D.N.

    “…We demonstrate a novel nuclear microprobe imaging and analysis modality for micrometre-scale field effect transistor devices probed with focused beams of MeV…”
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    Journal Article
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    Corrosion in artificial defects. II. Chromate reactions by Furman, S.A., Scholes, F.H., Hughes, A.E., Jamieson, D.N., Macrae, C.M., Glenn, A.M.

    Published in Corrosion science (01-07-2006)
    “…Artificial defects, in the form of slots, were milled through a chromate-containing protective paint system on AA2024-T3 and exposed to neutral salt spray…”
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    Journal Article
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    Charge sharing in multi-electrode devices for deterministic doping studied by IBIC by Jong, L.M., Newnham, J.N., Yang, C., Donkelaar, J.A. Van, Hudson, F.E., Dzurak, A.S., Jamieson, D.N.

    “…Following a single ion strike in a semiconductor device the induced charge distribution changes rapidly with time and space. This phenomenon has important…”
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    Journal Article
  19. 19

    Ion beam lithography using single ions by Alves, A., Reichart, P., Siegele, R., Johnston, P.N., Jamieson, D.N.

    “…Presented here is a study to determine the conditions whereby holes etched along single ion tracks can be produced. Using standard tools of ion beam analysis a…”
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    Journal Article
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    Characterization of ion tracks in PMMA for single ion lithography by Alves, A., Johnston, P.N., Reichart, P., Jamieson, D.N., Siegele, R.

    “…The ultimate resolution in ion beam lithography (IBL) can be achieved by etching tracks modified by the passage of a single ion impact which has a diameter in…”
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