Search Results - "Jamieson, D.N"
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The Raman spectrum of nanocrystalline diamond
Published in Chemical physics letters (15-12-2000)“…Nanometre sized diamond powder has been purified by centrifugation to remove contamination from sp 2 bonded carbon. The purified powder has been characterized…”
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Creating diamond color centers for quantum optical applications
Published in Diamond and related materials (01-11-2007)“…Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure…”
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Characterization of three-dimensional microstructures in single-crystal diamond
Published in Diamond and related materials (01-10-2006)“…We report on the Raman and photoluminescence characterization of three-dimensional microstructures fabricated in single crystal diamond with a Focused Ion Beam…”
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Low-Noise Detection System for the Counted Implantation of Single Ions in Silicon
Published in IEEE transactions on nuclear science (01-04-2008)“…A unique detection system has been developed which allows for the counted implantation of individual low-energy heavy ions into silicon. This system can ensure…”
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Optical properties of silver composite metamaterials
Published in Physica. B, Condensed matter (15-05-2007)“…We present a computational and experimental study investigating the optical properties of nanoscale silver composite metamaterials fabricated by ion beam…”
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Journal Article Conference Proceeding -
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The Leipzig high-energy ion nanoprobe: A report on first results
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-03-2000)“…The high-energy ion nanoprobe LIPSION at the University of Leipzig has been operational since October 1998. Its magnetic quadrupole lens system, arranged as a…”
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Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation
Published in Diamond and related materials (01-10-1998)“…The electrical properties of a deeply buried, boron-doped layer in type IIa diamond are reported. The layer is fabricated using mega-electron-volt (MeV) B-ion…”
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High-resolution Rutherford backscattering spectrometry with an optimised solid-state detector
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15-01-2021)“…Rutherford Backscattering Spectrometry (RBS) is a powerful ion beam analysis technique in frequent use within materials science. The recent emergence of…”
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Scanning ion deep level transient spectroscopy
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-09-1999)“…We describe a new spectroscopic technique on the MeV ion microprobe, which allows the mapping of electrically active defects within a semiconductor. The…”
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High definition large area mapping of geological samples using a Maia detector array in the Nuclear Microprobe
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15-06-2019)“…A Maia detector array has been adapted and installed on the CSIRO-MARC Nuclear Microprobe. Maia uses an annular array of 384 silicon detectors to provide a…”
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Electrical conduction in polycrystalline diamond and the effects of UV irradiation
Published in Diamond and related materials (01-04-1997)“…Two band-gap states are identified in polycrystalline diamond films; a level at about 1.1 eV (density of 10 17 cm −3, probably an acceptor state) and a trap…”
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Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20 - keV ions
Published in Applied physics letters (16-05-2005)“…We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub- 20 - keV . The method is based on the…”
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Radiation hardness of polycrystalline diamond
Published in Diamond and related materials (1997)“…Undoped and B-doped polycrystalline diamond films have been irradiated with 2-MeV alpha particles and 3-MeV protons at doses ranging from D=10 12 to D=10 17cm…”
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Modeling of ion beam induced charge sharing experiments for the design of high resolution position sensitive detectors
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-07-2013)“…In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active…”
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Mapping ion beam induced current changes in a commercial MOSFET
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15-10-2011)“…We demonstrate a novel nuclear microprobe imaging and analysis modality for micrometre-scale field effect transistor devices probed with focused beams of MeV…”
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Corrosion in artificial defects. II. Chromate reactions
Published in Corrosion science (01-07-2006)“…Artificial defects, in the form of slots, were milled through a chromate-containing protective paint system on AA2024-T3 and exposed to neutral salt spray…”
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Charge sharing in multi-electrode devices for deterministic doping studied by IBIC
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15-10-2011)“…Following a single ion strike in a semiconductor device the induced charge distribution changes rapidly with time and space. This phenomenon has important…”
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Ion beam lithography using single ions
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-08-2006)“…Presented here is a study to determine the conditions whereby holes etched along single ion tracks can be produced. Using standard tools of ion beam analysis a…”
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Characterization of ion tracks in PMMA for single ion lithography
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-07-2007)“…The ultimate resolution in ion beam lithography (IBL) can be achieved by etching tracks modified by the passage of a single ion impact which has a diameter in…”
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