Search Results - "Jamer, M. E"

Magnetic properties and large coercivity of MnxGa nanostructures by Jamer, M.E., Assaf, B.A., Bennett, S.P., Lewis, L.H., Heiman, D.

“…To investigate structure–property correlations, high-coercivity MnxGa nanoparticles were synthesized by the method of sequential deposition of Ga and Mn fluxes…”
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Exchange Bias in Bulk α‑Fe/γ-Fe70Mn30 Nanocomposites for Permanent Magnet Applications by McDonald, I. J, Jamer, M. E, Krycka, K. L, Anber, E, Foley, D, Lang, A. C, Ratcliff, W. D, Heiman, D, Taheri, M. L, Borchers, J. A, Lewis, L. H

“…Here we report on the microstructural factors influencing the formation of the interfacial exchange bias effect in three-dimensional transition-metal-based…”
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Exchange Bias in Bulk α - Fe / γ - Fe 70 Mn 30 Nanocomposites for Permanent Magnet Applications by McDonald, I J, Jamer, M E, Krycka, K L, Anber, E, Foley, D, Lang, A C, Ratcliff, W D, Heiman, D, Taheri, M L, Borchers, J A, Lewis, L H

“…Here we report on the microstructural factors influencing the formation of the interfacial exchange bias effect in three-dimensional transition-metal-based…”
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Fe2MnGe: A hexagonal Heusler analogue by Keshavarz, S., Naghibolashrafi, N., Jamer, M.E., Vinson, K., Mazumdar, D., Dennis, C.L., Ratcliff, W., Borchers, J.A., Gupta, A., LeClair, P.

“…We synthesized bulk polycrystalline samples of Fe2MnGe using arc-melting and vacuum annealing. Our experimental investigations revealed that Fe2MnGe…”
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Antiferromagnetic phase of the gapless semiconductor V3Al by Jamer, M. E., Assaf, Badih, Sterbinsky, G. E., Arena, D., Lewis, L. H., Saúl, A. A., Radtke, G., Heiman, D.

“…Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic deviceswithout fringing magnetic fields. TheAF gapless…”
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Magnetic properties and large coercivity of Mn sub(x)Ga nanostructures by Jamer, M E, Assaf, B A, Bennett, S P, Lewis, L H, Heiman, D

“…To investigate structure-property correlations, high-coercivity Mn sub(x)Ga nanoparticles were synthesized by the method of sequential deposition of Ca and Mn…”
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Antiferromagnetic phase of the gapless semiconductor V3Al by Jamer, M. E, Assaf, B. A, Sterbinsky, G. E, Arena, D, Lewis, L. H, Saúl, A. A, Radtke, G, Heiman, D

“…Discovering new antiferromagnetic compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The antiferromagnetic…”
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Fe^sub 2^MnGe: A hexagonal Heusler analogue by Keshavarz, S, Naghibolashrafi, N, Jamer, ME, Vinson, K, Mazumdar, D, Dennis, CL, Ratcliff, W, Borchers, JA, Gupta, A, LeClair, P

“…We synthesized bulk polycrystalline samples of Fe2MnGe using arc-melting and vacuum annealing. Our experimental investigations revealed that Fe2MnGe…”
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Antiferromagnetic phase of the gapless semiconductor V 3 Al by Jamer, M. E., Assaf, B. A., Sterbinsky, G. E., Arena, D., Lewis, L. H., Saúl, A. A., Radtke, G., Heiman, D.

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Antiferromagnetic phase of the gapless semiconductor V sub(3) Al by Jamer, M E, Assaf, B A, Sterbinsky, G E, Arena, D, Lewis, L H, Saul, A A, Radtke, G, Heiman, D

“…Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless…”
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