Search Results - "Jameel, Dler"

Effect of SiC polytypes on the electrical properties of polyaniline based heterojunctions by Jameel, Dler Adil

“…This work reports an extensive study of the effect of the SiC polytypes substrate on the electrical properties of heterostructures based on SiC and polyaniline…”
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Electrical performance of organic/inorganic hybrid solar cell devices based on n-type GaAs substrate orientations and a conjugated polymer (PANI) by Jameel, Dler Adil

“…This article presents the electrical performance of hybrid organic/inorganic solar cell devices. Hybrid polyaniline (PANI)/n-GaAs photovoltaic devices were…”
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Effect of erbium-doping concentration on the electrical, structural and morphological properties of heterostructures based on TiO2 thin films by AL MASHARY, FAISAL S, LIMA, JOÃO PAULO DE OLIVEIRA, MONDAL, ANIRUDDHA, MONDAL, SANJIB, GHOSH, ANUPAM, JAMEEL, DLER A, ALHASSAN, SULTAN, AL HUWAYZ, MARYAM M, ALOTAIBI, SAUD, HENINI, MOHAMED, FELIX, JORLANDIO FRANCISCO

“…Effect of erbium (Er) doping on the electrical, structural and morphological properties of TiO 2 thin films deposited by the combination of a simple sol–gel…”
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Electrical Properties of Sulfonated Polyaniline Thin Film Grown on Different GaAs Substrates by Jaqsi, Mohammed Kadhim, Jameel, Dler Adil, Sadiq, Diyar

“…The paper describes the impact of the crystallographic orientation of an n-type GaAs substrate on the electrical properties of a sulfonated polyaniline (SPAN)…”
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Design of biodegradable polymer blend electrolytes with decoupled ion motion for EDLC device Application: Electrical and electrochemical properties by Aziz, Shujahadeen B., Abdulwahid, Rebar T., Sadiq, Niyaz M., Abdullah, Ranjdar M., Tahir, Dana A., Jameel, Dler A., Hamad, Samir M., Abdullah, Omed Gh

“…•Development of polymer blends based on PVA:CS: with high DC conductivity.•Studies of electrical and dielectric properties.•TNM and LSV analysis with enhanced…”
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The Effects Of N-GaAs Substrate Orientations on The Electrical Performance of PANI/N-GaAs Hybrid Solar Cell Devices by Mustafa, Haveen A., Jameel, Dler A., Salim, Hussien I., Ahmed, Sabah M.

“…This paper reports the fabrication and electrical characterization of hybrid organic-inorganic solar cell based on the deposition of polyaniline (PANI) on…”
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Investigation of the effects of GaAs substrate orientations on the electrical properties of sulfonated polyaniline based heterostructures by Jameel, Dler Adil, Marroquin, John Fredy Ricardo, Aziz, Mohsin, Al Saqri, Noor Alhuda, Jum'h, Inshad, Telfah, Ahmad, Henini, Mohamed, Felix, Jorlandio Francisco

“…In this work we present a detailed study of the influence of the GaAs substrate orientation on the electrical properties of heterojunctions based on GaAs and…”
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Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques by Al Saqri, Noor Alhuda, Mondal, Aniruddha, Felix, Jorlandio Francisco, Gobato, Yara Galvão, Gordo, Vanessa Orsi, Albalawi, Hind, Jameel, Dler, Alghamdi, Haifa, Al Mashary, Faisal, Taylor, David, Abd El-sadek, Mahmmoud S., Henini, Mohamed

“…Existence of defect levels into the band gap of titanium oxide (TiO2) due to indium (In) doping was investigated by Deep level transition spectroscopy (DLTS),…”
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Investigation of defects in indium doped TiO 2 thin films using electrical and optical techniques by Al Saqri, Noor Alhuda, Mondal, Aniruddha, Felix, Jorlandio Francisco, Gobato, Yara Galvão, Gordo, Vanessa Orsi, Albalawi, Hind, Jameel, Dler, Alghamdi, Haifa, Al Mashary, Faisal, Taylor, David, Abd El-sadek, Mahmmoud S., Henini, Mohamed

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Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures With and Without Te-Doped Interfaces by Aziz, Mohsin, Felix, Jorlandio Francisco, Al Saqri, Noor, Jameel, Dler, Saleh Al Mashary, Faisal, Albalawi, Hind Mohammed, Mohammed Abdullah Alghamdi, Haifaa, Taylor, David, Henini, Mohamed

“…A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and…”
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Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates by Sengouga, Nouredine, Boumaraf, Rami, Mari, Riaz H., Meftah, Afak, Jameel, Dler, Al Saqri, Noor, Azziz, Mohsin, Taylor, David, Henini, Mohamed

“…Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the…”
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Electrical properties of sulfonated polyaniline (span) and polyaniline (pani) polymers grown on conventional and high index gaas substrates by Jameel, Dler Adil

“…The electrical properties of sulfonated polyaniline (SPAN) and polyaniline (PANI) grown on both conventional (100) and high Miller index GaAs surfaces are…”
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Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes by Filali, Walid, Sengouga, Nouredine, Oussalah, Slimane, Mari, Riaz H., Jameel, Dler, Al Saqri, Noor Alhuda, Aziz, Mohsin, Taylor, David, Henini, Mohamed

“…Forward and reverse current-voltage (IV) of Ti/Au/n-Al0.33Ga0.67As/n-GaAs/n-Al0.33Ga0.67As multi-quantum well (MQW) Schottky diodes were measured over a range…”
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Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures by Aziz, Mohsin, Felix, Jorlandio F., Jameel, Dler, Al Saqri, Noor, Al Mashary, Faisal S., Alghamdi, Haifaa M., Albalawi, Hind M.A., Taylor, David, Henini, Mohamed

“…The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing…”
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Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (211) and (311) oriented GaAs substrates by Boumaraf, R., Sengouga, N., Mari, R.H., Meftah, Af, Aziz, M., Jameel, Dler, Al Saqri, Noor, Taylor, D., Henini, M.

“…•Two Si-doped p-type GaAs on (N11) SI-GaAs Schottky diodes fabricated by MBE. N=1, 2.•C–V characteristics of the two diodes were measured at different…”
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