Search Results - "Jamba, D. M."

Molecular beam epitaxial growth and performance of HgCdTe-based simultaneous-mode two-color detectors by Rajavel, R. D., Jamba, D. M., Jensen, J. E., Wu, O. K., Brewer, P. D., Wilson, J. A., Johnson, J. L., Patten, E. A., Kosai, K., Caulfield, J. T., Goetz, P. M.

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Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band by Rajavel, R. D., Jamba, D. M., Jensen, J. E., Wu, O. K., Le Beau, C., Wilson, J. A., Patten, E., Kosai, K., Johnson, J., Rosbeck, J., Goetz, P., Johnson, S. M.

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Integrated multi-sensor system for real-time monitoring and control of HgCdTe MBE by Olson, G. L., Roth, J. A., Brewer, P. D., Rajavel, R. D., Jamba, D. M., Jensen, J. E., Johs, B.

“…We describe an integrated real-time sensing and control system for monitoring and controlling substrate temperature, layer composition, and effusion cell flux…”
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HgCdTe molecular beam epitaxy technology: a focus on material properties by WU, O. K, JAMBA, D. M, KAMATH, G. S, CHAPMAN, G. R, JOHNSON, S. M, PETERSON, J. M, KOSAI, K, COCKRUM, C. A

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High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy by Rajavel, R.D., Jamba, D.M., Wu, O.K., Jensen, J.E., Wilson, J.A., Patten, E.A., Kosai, K., Goetz, P., Chapman, G.R., Radford, W.A.

“…High-performance in situ doped two-color detectors with the n-p-n architecture for the sequential detection of mid- and long-wave infrared radiation were grown…”
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Chromium concentrations, depth distributions, and diffusion coefficient in bulk and epitaxial GaAs and in Si by Wilson, R. G., Vasudev, P. K., Jamba, D. M., Evans, C. A., Deline, V. R.

“…Implantation of 200-keV chromium fluences from 4.5×1012 to 1.0×1015 cm−2 and SIMS profiling were used to measure the atom densities and depth distribution of…”
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Molecular beam epitaxial growth and performance of integrated multispectral HgCdTe photodiodes for the detection of mid-wave infrared radiation by Rajavel, R.D., Jamba, D.M., Jensen, J.E., Wu, O.K., Wilson, J.A., Johnson, J.L., Patten, E.A., Kosai, K., Goetz, P., Johnson, S.M.

“…In situ doped HgCdTe two-color detectors with the n—p—n geometry were grown by molecular beam epitaxy, for the simultaneous detection of two closely spaced…”
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Status of HgCdTe-MBE technology for producing dual-band infrared detectors by Rajavel, R.D, Brewer, P.D, Jamba, D.M, Jensen, J.E, LeBeau, C, Olson, G.L, Roth, J.A, Williamson, W.S, Bangs, J.W, Goetz, P, Johnson, J.L, Patten, E.A, Wilson, J.A

“…Progress on achieving reproducible growth of high performance, dual-band IR detector structures in HgCdTe grown by molecular beam epitaxy (MBE) is described…”
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Secondary particle collection in ion implantation dose measurement by Jamba, D M

“…The measurement of ion implantation doses in the presence of secondary ions and electrons emitted from the target is discussed. A circuit and electrode…”
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Dependence of implanted Se and S profiles on GaAs implantation temperature and crystallinity by Wilson, Robert G., Jamba, Douglas M.

“…Atom depth distributions of Se implanted into GaAs show that the deep sides of the depth distributions are the result of interstitial diffusion of Se during…”
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Comparison of sources of boron, phosphorus, and arsenic ions by Wilson, R.G., Jamba, D.M.

“…A number of boron, phosphorus, and arsenic compounds, viz., B2H6, B10H14, B3N3H6, B2S3, BF3, BCl3, BBr3, BI3, HBO2, P, PH3, PF3, PF5, PCl3, POCl3, P2O5, As,…”
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Molecular beam epitaxial growth and properties of short‐wave infrared Hg0.3Cd0.7Te films by Rajavel, R. D., Wu, O. K., Jamba, D. M., de Lyon, T. J.

“…Hg1−x Cd x Te films with cut‐off wavelengths ranging from 1.25 to 1.65 μm (at 300 K) in the short wave infrared band were prepared by molecular beam epitaxy…”
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Status of HgCdTe-MBE technology for producing dual-band infrared detectors by RAJAVEL, R. D, BREWER, P. D, JOHNSON, J. L, PATTEN, E. A, WILSON, J. A, JAMBA, D. M, JENSEN, J. E, LEBEAU, C, OLSON, G. L, ROTH, J. A, WILLIAMSON, W. S, BANGS, J. W, GOETZ, P

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Molecular beam epitaxial growth and performance of integrated multispectral HgCdTe photodiodes for the detection of mid-wave infrared radiation by RAJAVEL, R. D, JAMBA, D. M, JENSEN, J. E, WU, O. K, WILSON, J. A, JOHNSON, J. L, PATTEN, E. A, KOSAI, K, GOETZ, P, JOHNSON, S. M

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High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy by RAJAVEL, R. D, JAMBA, D. M, WU, O. K, JENSEN, J. E, WILSON, J. A, PATTEN, E. A, KOSAI, K, GOETZ, P, CHAPMAN, G. R, RADFORD, W. A

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Chromium Concentrations, Depth Distributions and Diffusion Coefficient in Bulk and Epitaxial GaAs and in Silicon by Wilson, R G, Vasudev, P K, Jamba, D M, Evans, C A, Deline, V R

“…Implantation of 200 keV Cr fluences from 4.5 x 1012 to 1.0 x 1015 cm--2 and SIMS profiling were used to measure the atom densities and depth distribution of Cr…”
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Ion-implanted double-drift Ka-band diodes by Lee, D.H., Ying, R.S., Jamba, D.M.

“…The application of a doubly charged boron ( 11 B +2 ) beam to the formation of p-type drift regions in symmetrical K a -band double-drift silicon IMPATT diodes…”
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