Search Results - "Jakobus, T."

40-Gb/s high-power modulator driver IC for lightwave communication systems by Zhihao Lao, Thiede, A., Nowotny, U., Lienhart, H., Hurm, V., Schlechtweg, M., Hornung, J., Bronner, W., Kohler, K., Hulsmann, A., Raynor, B., Jakobus, T.

“…A monolithic integrated modulator driver with a data decision function for high-speed optical fiber links is presented. The integrated circuit (IC) was…”
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Modulator driver and photoreceiver for 20 Gb/s optic-fiber links by Zhihao Lao, Hurm, V., Thiede, A., Berroth, M., Ludwig, M., Lienhart, H., Schlechtweg, M., Hornung, J., Bronner, W., Kohler, K., Hulsmann, A., Kaufel, G., Jakobus, T.

“…Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance…”
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E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits by HÜLSMANN, A, KAUFEL, G, KÖHLER, K, RAYNOR, B, SCHNEIDER, J, JAKOBUS, T

“…We developed a technology to fabricate enhancement and depletion high electron mobility transistors (E- and D-HEMTs) with sub-0.5 µm gatelengths using e-beam…”
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5 Gsample/s track-hold and 3 Gsample/s quasi-sample-hold ICs by Lao, Z., Thiede, A., Lienhart, H., Schlechtweg, M., Bronner, W., Hornung, J., Hulsmann, A., Jakobus, T.

“…Two fully-differential track-and-hold and quasi-sample-and-hold circuits are based on AlGaAs/GaAs-HEMTs with 6OGHz f/sub T/. The less complex of these circuits…”
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Metal-non-metal transition at the crossover from antidots to quantum dots by Lütjering, G., Weiss, D., Tank, R.W., von Klitzing, K., Hülsmann, A., Jakobus, T., Köhler, K.

“…A three-dimensionally structured gate resembling a pillared hall allows the exertion of a strong potential modulation on a two-dimensional electron gas in a…”
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Mixed signal integrated circuits based on GaAs HEMTs by Thiede, A., Zhi-Gong, Schlechtweg, M., Lang, M., Leber, P., Zhihao Lao, Nowotny, U., Hurm, V., Rieger-Motzer, M., Ludwig, M., Sedler, M., Kohler, K., Bronner, W., Hornung, J., Hulsmann, A., Kaufel, G., Raynor, B., Schneider, J., Jakobus, T., Schroth, J., Berroth, M.

“…During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate…”
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Hemt circuits for signal/data processing by Berroth, M., Hurm, V., Lang, M., Lao, Z., Thiede, A., Wang, Z.-G., Bangert, A., Bronner, W., Hülsmann, A., Kaufel, G., Köhler, K., Raynor, B., Jakobus, T.

“…HEMT devices exhibit excellent figures of merit for high frequency operation. Therefore they are strong candidates for high speed signal and data processing…”
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Monolithic integration of a GaInAs PIN photodiode and AlGaAs/GaAs/AlGaAs HEMTs on GaAs substrate by Bronner, W., Benz, W., Dammann, M., Ganser, P., Grun, N., Hurm, V., Jakobus, T., Kohler, K., Ludwig, M., Olander, E.

“…A monolithic integrated optoelectronic receiver for a wavelength of 1.55 /spl mu/m consisting of a GaInAs PIN diode and a transimpedance AlGaAs/GaAs HEMT…”
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A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates by Lang, M., Wang, Z.G., Thiede, A., Lienhart, H., Jakobus, T., Bronner, W., Hornung, J., Hulsmann, A.

“…Using our 0.2 /spl mu/m AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized a single chip comprising a clock…”
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Long wavelength MSM-HEMT and PIN-HEMT photoreceivers grown on GaAs by Hurm, V., Benz, W., Bronner, W., Fink, T., Jakobus, T., Kaufel, G., Kohler, K., Lao, Z., Leven, A., Ludwig, M., Moglestue, C., Raynor, B., Rosenzweig, J., Schlechtweg, M., Thiede, A., Weisser, S.

“…1.3 - 1.55μm wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 μm gate…”
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Monolithic integrated optoelectronic circuits by Berroth, M., Bronner, W., Fink, T., Hornung, J., Hurm, V., Jakobus, T., Kohler, K., Lang, M., Nowotny, U., Wang, Z.-G.

“…Monolithic integration of lasers and photodetectors with electronic circuits promises higher bandwidth, improved manufacturability, smaller size, lower power…”
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20-Gb/s 14-k/spl Omega/ transimpedance long-wavelength MSM-HEMT photoreceiver OEIC by Lao, Z., Hurm, V., Bronner, W., Hulsmann, A., Jakobus, T., Kohler, K., Ludwig, M., Raynor, B., Rosenzweig, J., Schlechtweg, M., Thiede, A.

“…A fully monolithically integrated photoreceiver composed of a metal-semiconductor-metal (MSM) photodetector, a transimpedance amplifier and three limiting…”
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20-Gb/s 14-kOmicron transimpedance long-wavelength MSM-HEMTphotoreceiver OEIC by Lao, Z, Hurm, V, Bronner, W, Hulsmann, A, Jakobus, T, Kohler, K, Ludwig, M, Raynor, B, Rosenzweig, J, Schlechtweg, M, Thiede, A

“…A fully monolithically integrated photoreceiver composed of a metal-semiconductor-metal (MSM) photodetector, a transimpedance amplifier and three limiting…”
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Mixed signal integrated circuits based on GaAs HEMT's : Special section on impacts of emerging technologies on VLSI systems by THIEDE, A, WANG, Z.-G, SEDLER, M, KÖHLER, K, BRONNER, W, HORNUNG, J, HÜLSMANN, A, KAUFEL, G, RAYNOR, B, SCHNEIDER, J, JAKOBUS, T, SCHROTH, J, SCHLECHTWEG, M, BERROTH, M, LANG, M, LEBER, P, LAO, Z, NOWOTNY, U, HURM, V, RIEGER-MOTZER, M, LUDWIG, M

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Compact integrated coplanar T/R-modules for automotive applications by Verweyen, L., Bangert, A., Massler, H., Fink, T., Neumann, M., Osorio, R., Krems, T., Jakobus, T., Haydl, W.H., Schlechtweg, M.

“…Integrated transmit and receive MMICs for automotive applications have been realized in coplanar waveguide technology, using a 0.15 /spl mu/m PHEMT process…”
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Metal-non-metal transition at the crossover from antidots to quantum dots by LÜTJERING, G, WEISS, D, TANK, R. W, VON KLITZING, K, HÜLSMANN, A, JAKOBUS, T, KÖHLER, K

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Compact monolithic coplanar 94 GHz front ends by Haydl, W.H., Verweyen, L., Jakobus, T., Neumann, M., Tessmann, A., Krems, T., Schlechtweg, M., Reinert, W., Massier, H., Rudiger, J., Bronner, W., Hulsmann, A., Fink, T.

“…Fully integrated W-band 94 GHz heterodyne receivers in coplanar 0.15 /spl mu/m AlGaAs/InGaAs/GaAs PM-HEMT technology are described. The MMICs consist of a…”
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Multifunctional Intergration Using HEMT Technology by Schlechtweg, M., Verweyen, L., Haydl, W., Thiede, A., Lang, M., Leber, P., Hurm, V., Jakobus, T., Bronner, W., lsmann, A., Hornung, J., Wang, Z.

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Dielectric properties of epitaxial Pb1−x Sn x Te layers at microwave frequencies by Lehmann, H., Nimtz, G., Haas, L. D., Jakobus, T.

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10 Gb/s single-chip data regeneration with an injection synchronised ring oscillator and an automatic phase adjustment by Wang, Z.-G., Thiede, A., Rieger-Motzer, M., Hulsmann, A., Raynor, B., Schneider, J., Jakobus, T., Schlechtweg, M.

“…A new concept of high-speed data regeneration was developed by using an injection-synchronised narrowband ring oscillator for the clock recovery and an…”
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