Search Results - "Jakabovič, J."

Surface and interface analysis of iodine-doped pentacene structures for OTFTs by Jakabovič, J., Vincze, A., Kováč, J., Srnánek, R., Kováč Jr, J., Dobročka, E., Donoval, D., Heinemeyer, U., Schreiber, F., Machovič, V., Uherek, F.

“…We investigated the impact of iodine doping on structural properties of pentacene layers as a function of iodine concentration, which is controlled by the…”
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Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors by Jakabovič, J., Kováč, J., Weis, M., Haško, D., Srnánek, R., Valent, P., Resel, R.

“…We report on the fabrication and characterization of parylene C thin layers for organic electronic devices passivation and gate dielectric of organic field…”
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Optical and structural investigation of GaNxP1−x/GaP structures for light emitting diodes by Peternai, L., Kováč, J., Jakabovič, J., Vincze, A., Šatka, A., Gottschalch, V.

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Properties of 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran-doped Alq layers as optically pumped lasers by Jakabovič, J., Lengyel, O., Kováč, J., Wong, T. C., Lee, C. S., Lee, S. T.

“…The optical properties of tris-(8-hydroxyquinoline) aluminum (Alq) doped with 4-dicyanomethylene-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM) in…”
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Orientation relationship between indium films and GaSb(1 1 1)B: annealing-induced transformation of fibre texture into heteroepitaxy by Kečkéš, J, Ortner, B, Jakabovič, J, Kováč, J

“…X-ray diffraction analysis is used to characterise structural properties of indium thin films deposited on GaSb(1 1 1)B substrates. The thin films, serving as…”
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Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure by Wrachien, N., Bari, D., Kovac, J., Jakabovic, J., Donoval, D., Meneghesso, G., Cester, A.

“…We subjected OTFTs to electrical stress under various illumination conditions, in the visible-light range. Negligible intrinsic degradation is observed without…”
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Determination of defect states in P3HT material for solar cell application by Juhasz, P., Stuchlikova, L., Micjan, M., Harmatha, L., Jakabovic, J., Weis, M.

“…The defect states are investigated in ITO/P3HT/In organic diode structure by steady-state current-voltage technique and deep-level transient spectroscopy…”
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Type-I and type-II transitions in electroluminescence spectra of GaAs/AlAs monolayer multiquantum-well structures by Kováč, J, Pudiš, D, Šatka, A, Jánoš, L’, Jakabovič, J, Schwabe, R, Gottschalch, V, Benndorf, G, Rheinländer, B

“…We have investigated the temperature dependence of type-I and type-II optical transitions in electroluminescence spectra from type-II (GaAs) n /(AlAs) m…”
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Electrical and optical properties of ZnO/Si photodiodes with embedded CdTe and CdSe/ZnS nanoparticles by Hotovy, J., Kovac, J., Skriniarova, J., Novotny, I., Jakabovic, J., Kovac, J.

“…Photodiodes based on ZnO/Si heterostructures were fabricated by sputter deposition of polycrystalline n-ZnO films on p-Si substrates. CdTe and CdSe/ZnS…”
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Avalanche photodiode with sectional InGaAsP/InP charge layer by Haško, D., Kováč, J., Uherek, F., Škriniarová, J., Jakabovič, J., Peternai, L.

“…An InGaAs/InP avalanche photodiode (APD) with a sectional InGaAsP/InP charge layer at the heterointerface between the InGaAs absorption and InP multiplication…”
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Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor by Kováč, J., Škriniarová, J., Florovič, M., Jakabovič, J., Chovan, J., Srnánek, R., Vincze, A., Ściana, B., Radziewicz, D., Zborowska-Lindert, Iwona, Tlaczała, M.

“…We have prepared, characterized and discussed the performance of AlGaAs/GaAs heterojunction bipolar phototransistor (HPT) including Zn delta-doped base. Due to…”
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Semiconductor Lasers Based on Quantum Well Structures by Dusan Pudis, J. Kovac, J. Kovac, J. Jakabovic

“…We present electrical and optical properties of the quantum well laser structures based on InAs / AlxGa1-x As material systems. The experimental results…”
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Light emitting diode with 2D PhC structure in the surface analysed by NSOM by Suslik, L., Pudis, D., Skriniarova, J., Kovac, J., Kovac, J., Kubicova, I., Martincek, I, Jakabovic, J., Novak, J.

“…We present light emitting diode with two-dimensional photonic crystal structure prepared by interference lithography in the light emitting diode surface with…”
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Low-energy UV effects on Organic Thin-Film-Transistors by Wrachien, N, Cester, A, Bari, D, Meneghesso, G, Kovac, J, Jakabovic, J, Sokolsky, M, Donoval, D, Cirak, J

“…We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with…”
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Recent Advances in Organic Electronic by Kovac, J., Jakabovic, J., Peternai, L., Lengyel, O., Kytka, M.

“…The development of integrated organic electronic devices is a gateway for a variety of applications, and is of great relevance for the general purpose of…”
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Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology by Pisecny, P., Husekova, K., Frohlich, K., Harmatha, L., Soltys, J., Machajdik, D., Espinos, J.P., Jergel, M., Jakabovic, J.

“…We have investigated properties of insulating lanthanum oxide (La 2O 3) films in connection with the replacement of silicon oxide (SiO 2) gate dielectrics in…”
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Investigation of GaNxP1−x/GaP LED structure optical properties by Peternai, L, Kovac, J, Jakabovic, J, Gottschalch, V, Rheinlaender, B

“…GaNxP1−x alloy represents a novel compound semiconductor that has attracted considerable interest as a candidate for realization of light emitting diodes…”
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The Effect of Rapid Thermal Annealing on Oxygen Precipitation in Nitrogen Doped Silicon Substrate by Stuchlikova, L'., Harmatha, L., Tapajna, M., Ballo, P., Pisecny, P., Benkovic, M., Jakabovic, J.

“…Nitrogen introduced into a silicon substrate by the Czochralski method brought about an increase in the density of Si-SiO 2 interface traps and in the density…”
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Investigation of Si delta-doped InGaAs/GaAs QW MSM photodetectors by Florovic, M., Kovac, J., Smanek, R., Jakabovic, J., Chovan, J., Sciana, B., Radziewicz, D., Tlaczala, M.

“…The aim of this work is to point on the electrical and optical properties of interdigital MSM photodetectors containing Si delta-doped In 0.22 Ga 0.78 As/GaAs…”
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Investigation of GaN/ZnO heterostructures properties by Kovac, J., Skriniarova, J., Kudela, P., Novotny, I., Bruncko, J., Donoval, D., Jakabovic, J., Michalka, M., Janos, L'., Vincze, A., Hasko, D.

“…The authors report on the fabrication and measurement of electrical and optical properties of GaN/ZnO heterostructures. The I-V characteristics of the…”
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